Optical Properties of the Ge14Sb29Te57 and Ge15Sb15Te70 Phase-Change Materials in the Far-Infrared Range

Semiconductors - The infrared absorption spectra of Ge14Sb29Te57 and Ge15Sb15Te70 chalcogenide alloys in the amorphous and crystalline states are measured and analyzed in the wave-number range...     

Digital Technologies in the Analysis of Cryogenic Systems for Producing Liquid Hydrogen

Chemical and Petroleum Engineering - The third article in a series of five papers devoted to hydrogen energy digitalization. The article discusses the process of interaction of various digital...     

Drift mobility of charge carriers in AsSe films in the course of photoinduced transformations

The drift mobility of charge carriers in AsSe films of three types (initial, irradiated, and annealed after irradiation) has been investigated in the temperature range 290–380 K. It is found that, after irradiation, the hole drift mobility in the films atT = 300 K decreases from the initial value of 2 × 10⁻⁵ to 3 × 10⁻⁸ cm²/(V s), whereas the activation energy of drift mobility increases from 0.51 eV in the initial films to 0.75 eV in the irradiated films. After annealing (T = 365 K) of the irradiated films, the drift mobility and activation energy regain their initial values. The data obtained are discussed within the model of intrinsic charged defects.