Tube inlet orifice design of a once-through steam generator for flow stabilization

A numerical study is conducted on the secondary side screw-type tube inlet orifice design of a once-through steam generator. An orifice length criterion for flow stabilization is derived by introducing the hydraulic resistance ratio of the orifice and the subcooled region to the two-phase and superheated regions. Various tube plugging conditions and power levels are considered, and the secondary coolant pressure at the tube outlet is adjusted to maintain a constant thermal power. Comprehensive numerical solutions are acquired to evaluate the minimum orifice length under various operating conditions. The results obtained show that a constant thermal power is maintained by properly adjusting the secondary coolant outlet pressure with a variation of the superheat degree and secondary coolant pressure drop when the steam generator operates at high power level. The steam generator performance is analyzed according to the tube plugging condition in terms of the degree of superheat, secondary side pressure drop, temperature distribution, and quality distribution. The secondary side outlet pressure curve for the constant thermal power operation is obtained, and the required minimum orifice length to suppress the flow oscillation below the allowable level is evaluated. The lowest power level results in the highest minimum orifice length, and non-plugging condition provides a limiting case for the orifice length criterion except near the 100 % power level.

     

Microstructure evolution of the Ir-inserted Ni silicides with additional annealing

Thermally-evaporated 10 nm-Ni/1 nm-Ir/(poly)Si structures were fabricated in order to investigate the thermal stability of Ir-inserted nickel silicide after additional annealing. The silicide samples underwent rapid thermal annealing at 300 ° C to 1200 ° C for 40 s, followed by 30 min annealing at the given RTA temperatures. Silicides suitable for the salicide process were formed on the top of the single crystal and polycrystalline silicon substrates, mimicking actives and gates. The sheet resistance was measured using a four-point probe. High resolution x-ray diffraction and Auger depth profiling were used for phase and chemical composition analysis, respectively. Transmission electron microscope and scanning probe microscope were used to determine the cross-section structure and surface roughness. The silicide, which formed on single crystal silicon substrate with surface agglomeration after additional annealing, could defer the transformation of Ni(Ir)Si to Ni(Ir)Si2 and was stable at temperatures up to 1200 °C. Moreover, the silicide thickness doubled. There were no outstanding changes in the silicide thickness on polycrystalline silicon. However, after additional annealing, the silicon-silicide mixing became serious and showed high resistance at temperatures >700 °C. Auger depth profiling confirmed the increased thickness of the silicide layers after additional annealing without a change in composition. For a single crystal silicon substrate, the sheet resistance increased slightly due to the significant increases in surface roughness caused by surface agglomeration after additional annealing. Otherwise, there were almost no changes in surface roughness on the polycrystalline silicon substrate. The Ir-inserted nickel monosilicide was able to maintain a low resistance in a wide temperature range and is considered suitable for the nano-thick silicide process.     

Synthesis of graphene/vitamin C template-controlled polyaniline nanotubes composite for high performance supercapacitor electrode

A graphene nanosheet/polyaniline nanotube (GPNT) composite is prepared for the first time by in-situ chemical oxidative polymerization of aniline using vitamin C as a structure directing agent. The vitamin C molecules lead to the synthesis of polyaniline (PANI) nanotubes through the development of rod-like assembly by H-bonding in an aqueous medium. The initially synthesized graphene oxide/polyaniline nanotubes composite is reduced to graphene using hydrazine monohydrate followed by re-oxidation and protonation of the PANI to produce the GPNT nanocomposite. This novel composite showed a high specific capacitance of 534.37 F/g and an excellent energy density of 74.27 Wh/kg at a constant current of 0.5 mA. Besides, the GPNT composite exhibited excellent cycle life with 91.4% specific capacitance retained after 500 charge-discharge cycles. The excellent performance is due to the synergistic combination of graphene which provides good electrical conductivity and mechanical stability, and PANI nanofiber which deals with good redox activity.     

Acoustic radiation from modal vibration of automotive brake drum

The vibro-acoustic characteristics of an automotive brake drum is studied by applying a hybrid approach, which combines a numerical vibration analysis with an analytical acoustic solution. Specifically, structural vibration of a drum is investigated with the numerical finite element analysis, and vibratory displacements of the outer surface of the drum is approximated by simple mathematical expressions. Then, radiation of sound from the drum vibration is calculated using well-known theoretical solutions based on the simplified modal displacements. Finally, the calculation results are compared with those obtained by full numerical analyses. The results show that the numerical-analytical hybrid method allows relatively accurate calculation of vibro-acoustic properties of a brake drum under realistic boundary conditions.     

Piezoelectric Multilayer Ceramic/Polymer Composite Transducer with 2–2 Connectivity

A multilayer piezoelectric ceramic/polymer composite with 2–2 connectivity was fabricated by thermoplastic green machining after co-extrusion. The multilayer ceramic body was composed of piezoelectrically active lead zirconate titanate (PZN)–lead zinc niobate (PZN)-lead zirconate titanate (PZT) layers and electrically conducting PZN–PZT/Ag layers. After co-extruding the thermoplastic body, which consisted of five piezoelectric layers interspersed with four conducting layers, it was computer numeric-controlled machined to create periodic channels within it. Following binder burnout and sintering, an 18 vol% array of 190 μm thin PZT slabs with a channel size of 880 μm was fabricated. The channels were filled with epoxy in order to fabricate a PZN–PZT/epoxy composite with 2–2 connectivity. The piezoelectric coefficient (effective d ₃₃) and hydrostatic figure of merit ( d _h× g _h) of the PZN–PZT/epoxy composite were 1200 pC/N and 20 130 × 10⁻¹⁵ m²/N, respectively. These excellent piezoelectric characteristics as well as the relatively simple fabrication procedure will contribute in widening the application range of the piezoelectric transducers.     

Effect of clinoptilolite addition and solids retention time on the extracellular polymeric substances composition and soluble chemical oxygen demands in activated sludge

This study was carried out to compare EPS (Extracellular Polymeric Substances) composition between conventional activated sludge (AS) and activated sludge dosed with clinoptilolite (CAS). Additionally, those were compared with organic removal efficiency in the effluent in conjunction with EPS concentrations. The experiments were conducted at SRT (Solids Retention Time) ranging from 5 to 100 d. For the CAS, proteins were more readily observed for SRT 20 and 100 d compared to that of the AS. Polysaccharide concentration in the sludge was greatly increased for the CAS, but it was significantly diminished when the SRT was extended. The level of EPS concentration observed from the effluent had the same pattern of variation for the two different types of systems. Regardless of type of reactor, the ratio of proteins for sludge versus effluent was independent of SRT, but the ratio of polysaccharides diminished as SRT increased. In the long run, the degree of protein synthesis directly ascribed to concurrent enhancement of SCOD removal efficiency was slightly more in the CAS. It was decided that clinoptilolite added system could be more reliably retrofitted to a conventional activated sludge process.     

Shear creep resistance of styrene–isoprene–styrene (SIS)‐based hot‐melt pressure‐sensitive adhesives

The effects of the properties of substrates and tackifier on the shear creep of SIS‐based HMPSAs were investigated. The holding power (t_b) and shear adhesion failure temperature (SAFT) were measured. The relationship between the complex viscosity and the holding power was examined. The holding power and SAFT values of the triblock SIS blends were higher than those of the diblock‐containing SIS blends, perhaps because blends using triblock SIS have higher crossover temperature and complex viscosity than those using diblock‐containing SIS. Higher levels of aromatic resin‐modified aliphatic tackifier and rosin ester were found to decrease the holding power of the HMPSAs. This maybe due to the fact that rosin ester and aromatic‐modified aliphatic resin are compatible with both the ends and midblocks of SIS. © 2006 Wiley Periodicals, Inc. J Appl Polym Sci 100: 825–831, 2006     

Preparation and barrier property of poly(ethylene terephthalate)/clay nanocomposite using clay‐supported catalyst

Poly(ethylene terephthalate) (PET)/clay nanocomposite was prepared by the direct polymerization with clay‐supported catalyst. The reaction degree of catalyst against the cation exchange capacity of clay was 8 wt %. The intercalation of PET chains into the silicate layers was revealed by X‐ray diffraction studies. SEM morphology of the nanocomposite showed a good dispersion of clay‐supported catalyst, ranging from 30 to 100 nm. The intercalated and exfoliated clay‐supported catalyst in PET matrix was also observed by TEM. The improvement of O₂ permeability for PET/clay‐supported catalyst composite films over the pure PET is approximately factors of 11.3–15.6. © 2006 Wiley Periodicals, Inc. J Appl Polym Sci 100: 4875–4879, 2006     

Solution-processed semiconducting aluminum-zinc-tin-oxide thin films and their thin-film transistor applications

We prepared aluminum-zinc-tin-oxide (AZTO) thin films by the solution spin-coating method and investigated their physical and electrical properties according to different incorporated amounts of Al. AZTO films annealed at 400 °C were amorphous. Though SnO₂ crystallites were detected in films annealed at temperatures higher than 500 °C, the number of crystallites decreased as the Al content increased. Thin films had a smooth and uniform surface morphology with an optical transmittance value higher than 92% in the visible range. Electrical conductivity and its temperature dependence varied markedly according to the amount of Al incorporated in the film. We therefore systematically investigated activation energies for carrier transport for each film composition. Thin-film transistors (TFTs) were fabricated using solution-processed AZTO as an active channel layer. The effects of the amount of Al incorporated in the thin film on TFT characteristics were also evaluated. The best device performance was observed for a TFT with a 5 mol%-Al-incorporated AZTO channel. Field effect mobility, subthreshold swing, and on/off ratio were approximately 0.24 cm² V⁻¹ s⁻¹, 0.69 V/dec, and 1.03×10⁶, respectively.     

Synthesis and characterization of a series of bis(dimethyl-n-octylsilyl)oligothiophenes for organic thin film transistor applications

A series of bis-dimethyl-n-octylsilyl end-capped oligothiophenes consisting of two to six thiophene units has been synthesized and characterized to develop novel organic semiconductor materials. The UV–vis spectral data indicate that these silyl end-capped oligothiophenes have longer conjugation lengths as evidenced by the higher λ_max values than the corresponding unsubstituted thiophene oligomers. The thermal analyses indicate that the bis-silylated oligothiophenes show lower melting point (DSi-4T = 80 °C; DSi-5T = 115 °C; DSi-6T = 182 °C) than the corresponding dialkylated thiophene oligomers by 100 °C and hexamer DSi-6T exhibits a liquid crystalline mesophase at 143 °C. The α,ω-bis(dimethyl-n-octylsilyl)oligothiophenes (DSi-6T) have a remarkably high solubility in chloroform which are comparable to the corresponding α,ω-dihexyloligothiophenes. The remarkably increased solubility by these silyl end groups leads bis-silylated oligothiophenes to be applicable to solution processable devices for thin film transisitor (TFT) by utilizing a spin-coating technique. α,ω-Bis(dimethyl-n-octylsilyl)sexithiophene can be deposited as active semiconducting layer in thin film transistors, either by vacuum evaporation or by spin-coating. A high charge-carrier mobility has been obtained for both deposition techniques, μ = 4.6 × 10⁻² and 1.4 × 10⁻² cm² V⁻¹ s⁻¹, respectively.