Elements and their transitions feasible for NEET

Electron and nuclear transitions in the nuclear excitation by electron transition (NEET) process have been investigated. The NEET transitions for nuclei are presented in a table in which the electron and nuclear transitions, their transition energies, transition multipoles, and nuclear spin angular momentum are given. The elements are listed for which the difference between the electron and nuclear transition energy is <5 keV, because the NEET probability will be appreciable if the electron transition energy is close to the nuclear transition one. As both the experimental and theoretical studies for NEET are at an early stage, only the elements and their parameters related to NEET are listed here. The present compilation, however, provides a useful direction for future studies of NEET and its applications to nuclear science.     

Quantum Bit-commitment for small storage based on quantum one-way permutations

We propose a quantum bit-commitment scheme based on quantum one-way permutations with the unconditionally binding and computationally concealing property. Our scheme reduces exponentially the number of bits which the receiver needs to store until, the opening phase compared with the classical counterpart. Keisuke Tanaka, Ph.D.: He is Assistant Professor of Department of Mathematical and Computing Sciences at Tokyo Institute of Technology. He received his B.S. from Yamanashi University in 1992 and his M.S. and Ph.D. from Japan Advanced Institute of Science and Technology in 1994 and 1997, respectively. For each degree, he majored in computer science. Before joining Tokyo Institute of Technology, he was Research Engineer at NTT Information Sharing Platform Laboratories. His research interests are cryptography, quantum computation, circuit complexity, and the design and analysis of algorithms.     

What Does a Pigeon (Columba livia) Brain Look Like During Homing? Selective Examination of ZENK Expression.

Lesion studies have shown that the avian hippocampus plays a crucial role in homing pigeon (Columba livia) navigation. Using the expression of the immediate early gene protein ZENK in intact pigeons, the authors found regional variation in hippocampal activation as a consequence of homing and, necessarily, the behavior and internal states that accompany it. Specifically, pigeons that homed displayed a significant increase in the number of ZENK-labeled cells in the lateral hippocampal formation compared with pigeons that did not home, whereas no difference was seen in the medial hippocampus. Significant changes in ZENK expression were also found in the medial striatum, which resembles the mammalian ventral striatum. The results identify portions of the hippocampal formation and the medial striatum as sites of plasticity associated with homing. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

ST-segment elevation in right precordial leads implies depressed right ventricular function after acute inferior myocardial infarction

BACKGROUND: The prognosis of acute inferior myocardial infarction is worse when it is complicated by right ventricular infarction. ST elevation in the right precordial leads is one of the reliable methods for detecting acute right ventricular infarction. The purpose of the study was to examine the relation between ST elevation in the right precordial electrocardiographic leads during acute inferior infarction and the severity of right ventricular systolic dysfunction. METHODS: This study analyzed the relation between ST elevation > or = 0.1 mV in V4R and the severity of right ventricular systolic dysfunction in 43 consecutive patients (men/women: 35/8; average age 62+/-9 years) with acute inferior myocardial infarction with a rapid-response Swan-Ganz catheter to measure the right ventricular ejection fraction (RVEF). RESULTS: RVEF was significantly lower in patients with ST elevation (n = 18) than in those without (n = 25) (33%+/-6% vs 40%+/-9%, p = 0.010). If the infarct-related lesion was located in the proximal right coronary artery, RVEF tended to be lower than if the lesion was located in the distal right coronary artery or the left circumflex coronary artery (33%+/-10% vs 37%+/-9% vs 42%+/-9%, p = 0.101). Logistic regression analysis demonstrated that ST elevation in V4R was the only independent predictor of depressed RVEF (odds ratio = 5.31, 95% confidence interval = 1.28 to 22.1, p = 0.022). CONCLUSION: ST elevation in lead V4R during acute inferior myocardial infarction predicts right ventricular systolic dysfunction.     

Electrical characterization of high-k gate dielectrics on Ge with HfGeN and GeO2 interlayers

Two kinds of HfSiO_x/interlayers (ILs)/Ge gate stack structures with HfGeN- and GeO₂-ILs were fabricated using electron cyclotron resonance (ECR) plasma sputtering and the subsequent post deposition annealing (PDA). It was found that HfGe was formed by the deposition of Hf metal on Ge and changed to HfGeN by N₂ ECR-plasma irradiation, which was used as IL. Another IL was GeO₂, which was grown by thermal oxidation at 500 °C. For dielectrics with HfGeN-IL, PDA of 550 °C resulted in effective oxide thickness (EOT) of 2.2 nm, hysteresis of 0.1 V, and interface state density (D_it) = 7 × 10¹² cm^− 2 eV^− 1. For dielectrics with GeO₂-IL, PDA of 500 °C resulted in EOT of 2.8 nm, hysteresis of 0.1 V, and D_it = 1 × 10¹² cm^− 2 eV^− 1. The structural change of HfSiO_x/GeO₂/Ge during the PDA was clarified by using X-ray photoelectron spectroscopy, and the gate stack formation for obtaining the good IL was discussed.     

Effect of water vapor and hydrocarbons in removing NOxby using nonthermal plasma and catalyst

Removal of NO_x in flue gas was investigated by using nonthermal plasma with catalysts. In this experiment, flue gas contained 5%-15% water vapor and hydrocarbons, as well as nitrogen, oxygen, and carbon dioxide. Catalysts tested in this paper were copper- and sodium-coated zeolite (CuZSM-5, NaZSM-5) and a conventional three-way catalyst (Pt-Rh, alumina cordierite). The simulated flue gases had from 0% to 15% water vapor, 70% NO removal was achieved with NaZSM-5 catalyst at 200°C-500°C, with 10% moisture and the power to the reactor turned off. High-temperature removal of NO_x was the result of plasma chemical reactions and adsorption in the catalyst. However, nonthermal plasma degrades the NO_x removal with CuZSM-5 catalyst, when the gas temperature is 300°C or above. When the gas temperature was 100°C, the nonthermal plasma process was enhanced by the combination of nonthermal plasma with any type of catalyst. The catalysts investigated in this paper do not work at lower temperatures by themselves. Adsorption characteristics were also investigated and only NaZSM-5 catalyst showed significant adsorption     

Avalanche breakdown voltage of GaAs hyperabrupt junctions

The avalanche breakdown voltage of a GaAs hyperabrupt junction diode is calculated by using unequal ionization rates for electrons and holes, and shown graphically as a function of the parameters which characterize the impurity profile of the diode. The breakdown voltage decreases abruptly at the critical point of the characteristic length L_c which varies in accordance with the impurity concentration N₀ at X = 0. For example, the critical length L_c is 7.7 × 10⁻⁶ cm and 3.3 × 10⁻⁵ cm for N₀ = 1 × 10¹⁸ cm⁻³ and 1 × 10¹⁷ cm⁻³, respectively. The breakdown voltage of a diode with extremely short or long characteristic length can be estimated from the results for corresponding abrupt junctions. The experimental results agree well with the calculated ones.     

Numerical computation of two-loop box diagrams with masses

A new approach is presented to evaluate multi-loop integrals, which appear in the calculation of cross-sections in high-energy physics. It relies on a fully numerical method and is applicable to a wide class of integrals with various mass configurations. As an example, the computation of two-loop planar and non-planar box diagrams is shown. The results are confirmed by comparisons with other techniques, including the reduction method, and by a consistency check using the dispersion relation.