Sar1 Affects the Localization of Perilipin 2 to Lipid Droplets

Lipid droplets (LDs) are intracellular organelles that are ubiquitous in many types of cells. The LD core consists of triacylglycerols (TGs) surrounded by a phospholipid monolayer and surface proteins such as perilipin 2 (PLIN2). Although TGs accumulate in the phospholipid bilayer of the endoplasmic reticulum (ER) and subsequently nascent LDs buds from ER, the mechanism by which LD proteins are transported to LD particles is not fully understood. Sar1 is a GTPase known as a regulator of coat protein complex Ⅱ (COPⅡ) vesicle budding, and its role in LD formation was investigated in this study. HuH7 human hepatoma cells were infected with adenoviral particles containing genes coding GFP fused with wild-type Sar1 (Sar1 WT) or a GTPase mutant form (Sar1 H79G). When HuH7 cells were treated with oleic acid, Sar1 WT formed a ring-like structure around the LDs. The transient expression of Sar1 did not significantly alter the levels of TG and PLIN2 in the cells. However, the localization of PLIN2 to the LDs decreased in the cells expressing Sar1 H79G. Furthermore, the effects of Sar1 on PLIN2 localization to the LDs were verified by the suppression of endogenous Sar1 using the short hairpin RNA technique. In conclusion, it was found that Sar1 has some roles in the intracellular distribution of PLIN2 to LDs in liver cells.     

Association of Ligamentum Flavum Hypertrophy with Adolescent Idiopathic Scoliosis Progression—Comparative Microarray Gene Expression Analysis

The role of the ligamentum flavum (LF) in the pathogenesis of adolescent idiopathic scoliosis (AIS) is not well understood. Using magnetic resonance imaging (MRI), we investigated the degrees of LF hypertrophy in 18 patients without scoliosis and on the convex and concave sides of the apex of the curvature in 22 patients with AIS. Next, gene expression was compared among neutral vertebral LF and LF on the convex and concave sides of the apex of the curvature in patients with AIS. Histological and microarray analyses of the LF were compared among neutral vertebrae (control) and the LF on the apex of the curvatures. The mean area of LF in the without scoliosis, apical concave, and convex with scoliosis groups was 10.5, 13.5, and 20.3 mm², respectively. There were significant differences among the three groups (p < 0.05). Histological analysis showed that the ratio of fibers (Collagen/Elastic) was significantly increased on the convex side compared to the concave side (p < 0.05). Microarray analysis showed that ERC2 and MAFB showed significantly increased gene expression on the convex side compared with those of the concave side and the neutral vertebral LF cells. These genes were significantly associated with increased expression of collagen by LF cells (p < 0.05). LF hypertrophy was identified in scoliosis patients, and the convex side was significantly more hypertrophic than that of the concave side. ERC2 and MAFB genes were associated with LF hypertrophy in patients with AIS. These phenomena are likely to be associated with the progression of scoliosis.     

Mimic Drug Dosage Modulation for Neuroplasticity Based on Charge-Trap Layered Electronics

The human brain is often likened to an incredibly complex and intricate computer, rather than electrical devices, consisting of billions of neuronal cells connected by synapses. Different brain circuits are responsible for coordinating and performing specific functions. The reward pathway of the synaptic plasticity in the brain is strongly related to the features of both drug addiction and relief. In the current study, a synaptic device based on layered hafnium disulfide (HfS₂) is developed for the first time, to emulate the behavioral mechanisms of drug dosage modulation for neuroplasticity. A strong gate-dependent persistent photocurrent is observed, arising from the modulation of substrate-trapping events. By controlling the polarity of gate voltage, the basic functions of biological synapses are realized under a range of light spiking conditions. Furthermore, under the control of detrapping/trapping events at the HfS₂/SiO₂ interface, positive/negative correlations of the A_n/A₁ index, which significantly reflected the weight change of synaptic plasticity, are realized under the same stimulation conditions for the emulation of the drug-related addition/relief behaviors in the brain. The findings provide a new advance for mimicking human brain plasticity.     

Dielectric properties of tissue-equivalent liquids and their effects on specific absorption rate

The radio frequency safety of mobile phones has been evaluated in terms of specific absorption rate (SAR). Standard methods for measurement of the SAR, including recipes for tissue-equivalent dielectric liquids, have recently been the subject of discussion among international standards organizations. Standards currently recommend glycol-type liquids as tissue-equivalent liquids for frequencies above 1 GHz. Although the ingredients are specified in the recipes provided, some fundamental information, such as the stability of dielectric properties, remains unclear. We measured the change of dielectric properties with time and with temperature of tissue-equivalent liquids recommended in the standard documents, and evaluated their effects on SAR. The conductivity decreased with increasing temperature in all glycol-type specimens. The permittivity, on the other hand, was almost constant. With the evaporation of water, the permittivity decreased, although the conductivities remained constant. Experimental results proved that dielectric properties are affected by environmental conditions, and that it is inevitably necessary to adjust the dielectric properties regularly, through the addition of ingredients, in order to follow the standards. The SAR values, however, were not affected significantly by the change in dielectric properties; thus, a larger tolerance of the dielectric properties may be acceptable in practical SAR measurements.     

A channel-erasing 1.8-V-only 32-Mb NOR flash EEPROM with a bitlinedirect sensing scheme

A 1.8-V-only 32-Mb NOR flash EEPROM has been developed based on the 0.25-μm triple-well double-metal CMOS process. A channel-erasing scheme has been implemented to realize a cell size of 0.49 μm² , the smallest yet reported for 0.25-μm CMOS technology. A block decoder circuit with a novel erase-reset sequence has been designed for the channel-erasing operation. A bitline direct sensing scheme and a wordline boosted voltage pooling method have been developed to obtain high-speed reading operation at low voltage. An access time of 90 ns at 1.8 V has been realized     

Study on critical dimension of printable phase defects using an EUV microscope

We constructed an extreme ultraviolet microscopy (EUVM) system for actinic mask inspection that consists of Schwarzschild optics and an X-ray zooming tube. This system was used to inspect finished extreme ultraviolet lithography (EUVL) masks and Mo/Si glass substrates. A clear EUVM image of a 300-nm-wide pattern on a 6025 glass mask was obtained. The resolution was estimated to be 50 nm or less from this pattern. Programmed phase defects on the glass substrate were also used for inspection. The EUV microscope was able to resolve a programmed pit defect with a width of 40 nm and a depth of 10 nm and also one with a width of 70 nm and a depth of 2 nm. However, a 75-nm-wide 1.5-nm-deep pit defect was not resolved. Thus, in this study, one critical dimension of a pit defect was estimated to be a depth of 2 nm.     

Electrical properties of 1.5-nm SiON gate-dielectric using radical oxygen and radical nitrogen

We have developed a low-leakage and highly reliable 1.5-nm SiON gate-dielectric by using radical oxygen and nitrogen. In this development, we introduce a new method for determining an ultrathin SiON gate-dielectric thickness based on the threshold voltage dependence on the substrate bias in MOSFETs. It was found that oxidation using radical oxygen followed by nitridation using radical nitrogen provides the 1.5-nm (oxide equivalent thickness) SiON, in which leakage current is two orders of magnitude less than that of 1.5-nm SiO/sub 2/ without degrading device performance in NMOSFETs. The 1.5-nm (oxide equivalent thickness) SiON was also found to be ten times more reliable than 1.5-nm SiO/sub 2/.     

Performance of handoff algorithm based on distance and RSSI measurements

The performance of a proposed handoff algorithm based on both the distance of a mobile station to neighboring base stations and the relative signal strength measurements is evaluated. The algorithm performs handoff when the measured distance from the serving base station exceeds that from the candidate base station by a given threshold and if the measured signal strength of the adjacent base station exceeds that of the serving base station by a given hysteresis level. The average handoff delay and average number of handoffs are used as criteria for performance. Numerical results are presented to demonstrate the feasibility of the distance-based handoff algorithm, including results for an additional criterion based on relative signal strength. The proposed algorithm is compared with an algorithm based on absolute and relative signal strength measurements and with a solely distance-based algorithm. It is found that the proposed handoff algorithm performs well in a log-normal fading environment when the distance estimate error is modeled by wide-sense stationary additive white Gaussian noise.     

Conductive Transparent TiNx/TiO2 Hybrid Films Deposited on Plastics in Air Using Atmospheric Plasma Processing

The successful deposition of conductive transparent TiN_x/TiO₂ hybrid films on both polycarbonate and silicon substrates from a titanium ethoxide precursor is demonstrated in air using atmospheric plasma processing equipped with a high‐temperature precursor delivery system. The hybrid film chemical composition, deposition rates, optical and electrical properties along with the adhesion energy to the polycarbonate substrate are investigated as a function of plasma power and plasma gas composition. The film is a hybrid of amorphous and crystalline rutile titanium oxide phases and amorphous titanium nitride that depend on the processing conditions. The visible transmittance increases from 71% to 83% with decreasing plasma power and increasing nitrogen content of the plasma gas. The film resistivity is in the range of ～8.5 × 10¹ to 2.4 × 10⁵ ohm cm. The adhesion energy to the polycarbonate substrate varies from ～1.2 to 8.5 J/m² with increasing plasma power and decreasing plasma gas nitrogen content. Finally, annealing the film or introducing hydrogen to the primary plasma gas significantly affects the composition and decreases thin‐film resistivity.     

Electromagnetic Design Techniques for Liquid Crystal Display Driver ICs

A simple method of verifying electromagnetic interference (EMI) reduction effects for liquid crystal display (LCD) driver integrated circuits (ICs) is proposed. In this paper, we discuss correlations between radiated emissions and high-frequency currents of power system at three different levels: print circuit board (PCB) level, chip level, and functional circuit level. The EMI design points for LCD driver ICs are presented too. Simulated and measured results prove that our EMI design effectively reduces LCD EMI noise.