镍层耐硝酸腐蚀性测试——一种简单的预先探测ENIG镍层“黑盘”现象的测试方法

随着更加精细的SMT、BGA等表面贴装技术的运用,化学沉镍金(ENIG)作为线路板最终表面处理得到了越来越广泛的应用,同时可怕的“黑盘”现象也随之更广泛地“流行”起来,直接导致贴装后元器件焊接点不规则接触不良。为了贯彻执行最好的流程控制和采取有效的预防措施,了解这种焊接失败的产生机理是非常重要的,及早的观测到可能发生“黑盘”现象的迹象变得同样关键。本文介绍了一种简单的预先探测ENIG镍层“黑盘”现象的测试方法-镍层耐硝酸腐蚀性测试,这种测试可以用于作为一种常规的测试方法监测一般化学沉镍溶液在有效使用寿命范围内新鲜沉积的镍层的质量。利用Weibull概率统计分析在不同的金属置换周期(MTO)下镍层的可靠性能表现。结合试验结果得出了一个镍层耐硝酸腐蚀性的判定标准。     

Measurement and numerical simulation of three‐dimensional fiber orientation states in injection‐molded short‐fiber‐reinforced plastics

To determine three‐dimensional fiber orientation states in injection‐molded short‐fiber composites, a confocal laser scanning microscope (CLSM) is used. Since the CLSM optically sections the specimen, more than two images of the cross sections on and below the surface of the composite can be obtained. Three‐dimensional fiber orientation states can be determined by using geometric parameters of fiber images obtained from two parallel cross sections. For experiments, carbon‐fiber‐reinforced polystyrene is examined by the CLSM and geometric parameters of fibers on each cross‐sectional plane are measured by an image analysis. In order to describe fiber orientation states compactly, orientation tensors are determined at different positions of the prepared specimen. Three‐dimensional orientation states are obtained without any difficulty by determining the out‐of‐plane angles utilizing fiber images on two parallel planes acquired by the CLSM. Orientation states are different at different positions and show the shell–core structure along the thickness of the specimen. Fiber orientation tensors are predicted by a numerical analysis and the numerically predicted orientation states show good agreement with measured ones. However, some differences are found at the end of cavity. They may result from the fountain flow effects, which are not considered in the numerical analysis. © 2003 Wiley Periodicals, Inc. J Appl Polym Sci 88: 500–509, 2003     

Advanced disturbance observer design for mechanical positioning systems

Disturbance-observer (DOB)-based controller design is one of the most popular methods in the field of motion control. In this paper, the generalized disturbance compensation framework, named the robust internal-loop compensator (RIC) is introduced and an advanced design method of a DOB is proposed based on the RIC. The mixed sensitivity optimization problem, which is the main issue of DOB design, is also solved through the parametrization of the DOB in the RIC framework. Differently from conventional methods, the Q-filter is separated from the mixed sensitivity optimization problem and a systematic design law for the DOB is proposed. This guarantees the robustness and optimality of the DOB and enables the design for unstable plants.     

Wireless-adaptive fair scheduling for multimedia stream

As packet cellular networks are expected to support multimedia services, the authors incorporate the multimedia QoS requirements into the design of a new scheduling algorithm. The proposed wireless-adaptive fair scheduling tries to allocate time slots for each user with fair share by considering the varying channel condition while reflecting the stream requirements and achieving high throughput.     

Magnetic effects of direct ion implantation of Mn and Fe into p-GaN

In p-GaN implanted with Mn (3×10¹⁶ cm⁻² at 250 keV), the material after annealing shows ferromagnetic properties below 250 K. Cross-sectional transmission electron microscopy (TEM) revealed the presence of platelet structures with hexagonal symmetry. These regions are most likely Ga_xMn_1−xN, which produce the ferromagnetic contribution to the magnetization. In p-GaN implanted with Fe, the material after annealing showed ferromagnetic properties at temperatures that were dependent on the Fe dose, but were below 200 K in all cases. In these samples, TEM and diffraction analysis did not reveal any secondary phase formation. The results for the Fe implantation are similar to those reported for Fe doping during epitaxial growth of GaN.     

Abnormal junction profile of silicided p+/n shallowjunctions: a leakage mechanism

The leakage mechanism in p⁺/n shallow junctions fabricated using Co silicidation and shallow trench isolation processes has been investigated using transmission electron microscopy (TEM) combined with selective chemical etching. TEM and TSUPREM-4 simulation results show that dopant profiles bend upward near the edge of the active region. The formation of the abnormal profile is attributed to transient enhanced diffusion induced by source/drain implantation. Based on the TEM and simulation results, it is suggested that the shallower junctions formed near the active edge can serve as a source for leakage current in the silicided p+ /n shallow junctions     

PERCHLOROETHYLENE EXTRACTION DESULFURIZATION OF LOW SULFATE COALS

The perchloroethylene coal refining process utilizes perchloroethylene (PCE) as its solvent in all phases of the precombustion desulfurization process, including wet grinding, organic sulfur removal, gravitational separation of pyrites and mineral matter, and recovery of elemental sulfur (S₈). The Process is capable of producing compliance coal which emits less than 1.2 lb SO_X/MBTU when burnt, starting from 5 mass percent sulfur Midwestern and Eastern U.S. coals. However, the process efficiency was found to be very strongly dependent upon the degree of weathering or the level of coal oxidation. In this paper, perchloroethylene extraction data of fresh, low-sulfate coals are summarized and critically assessed. The extraction efficiency of the organic sulfur removal ranged from 5 to 30 percent for fresh coals, while that for weathered coals ranged from 30 to 60 percent. This study provides a valuable insight into the chemical reaction mechanism of perchloroethylene desulfurization process.     

Improved Yen-Joye's authenticated multiple-key agreement protocol

An authenticated multiple-key agreement protocol is proposed. The protocol is not only secure against the unknown-key attack but also more efficient than other protocols.     

Flicker noise in gate overlapped polycrystalline silicon thin-filmtransistors

A study of the noise performance of gate overlapped polycrystalline silicon thin-film transistors (TFTs) is presented. Low-frequency noise measurements were carried out on n- and p-type samples fabricated by excimer laser crystallization. It is shown that the carrier number fluctuation model applies not only to n-type but also to p-type devices. The density of oxide traps was extracted from the noise measurements and was of the order of 10¹⁸-10¹⁹ eV^-1 cm^-3