Open‐Shell Donor–Acceptor Conjugated Polymers with High Electrical Conductivity

Conductive polymers largely derive their electronic functionality from chemical doping, processes by which redox and charge‐transfer reactions form mobile carriers. While decades of research have demonstrated fundamentally new technologies that merge the unique functionality of these materials with the chemical versatility of macromolecules, doping and the resultant material properties are not ideal for many applications. Here, it is demonstrated that open‐shell conjugated polymers comprised of alternating cyclopentadithiophene and thiadiazoloquinoxaline units can achieve high electrical conductivities in their native “undoped” form. Spectroscopic, electrochemical, electron paramagnetic resonance, and magnetic susceptibility measurements demonstrate that this donor–acceptor architecture promotes very narrow bandgaps, strong electronic correlations, high‐spin ground states, and long‐range π‐delocalization. A comparative study of structural variants and processing methodologies demonstrates that the conductivity can be tuned up to 8.18 S cm^?1. This exceeds other neutral narrow bandgap conjugated polymers, many doped polymers, radical conductors, and is comparable to commercial grades of poly(styrene‐sulfonate)‐doped poly(3,4‐ethylenedioxythiophene). X‐ray and morphological studies trace the high conductivity to rigid backbone conformations emanating from strong π‐interactions and long‐range ordered structures formed through self‐organization that lead to a network of delocalized open‐shell sites in electronic communication. The results offer a new platform for the transport of charge in molecular systems.     

超越“纳米级”设计时代

毫无疑问,我们正在跨入“纳米级”设计时代（处于1000nm到1nm级别的设计）的后期阶段。在未来18个月内,我们将开始部署32nm设计流程;而且,从32nm跨越到22nm所存在的障碍已经被攻克。我们将会在65nm和45/40nm之间采用有效率的、以价值为基础的设计流程。我们将乐于获得多CPU芯片和虚拟软件支持带来的优越性,凭借着新型设计平台的威力,迎来产品和应用新一轮的蓬勃发展。新型设计平台使设计公司可以充分发挥各种成本／功能／价值工艺节点之所长,满足当前市场上的定制需求。     

一种采用新型复合沟道GaN HEMTs低噪声分布式放大器

设计研制了一种新型的低噪声分布式放大器,采用了栅长为1μm的低噪声复合沟道Al0.3Ga0.7N/Al0.05Ga0.95N/GaN HEMT (CC-HEMT). 给出了低噪声分布式放大器的仿真和测试结果. 测试结果显示低噪声分布式放大器在2~10GHz频率范围内,输入和输出端口驻波比均小于2.0,相关增益大于7.0dB,带内增益波纹小于1dB . 在2~6GHz频率范围内,噪声系数小于5dB;在2~10GHz频率范围内,噪声系数小于6.5dB; 测试结果与仿真结果较吻合.     

Floating Point CGRA based Ultra-Low Power DSP Accelerator

Journal of Signal Processing Systems - Coarse Grained Reconfigurable Arrays (CGRAs) are emerging as energy efficient accelerators providing a high grade of flexibility in both academia and...     

Lossless,Passive Transportation of Low Surface Tension Liquids Induced by Patterned Omniphobic Liquidlike Polymer Brushes

Surfaces enabling directional liquid transportation are of great interest for a wide range of applications such as water collection, microfluidics, and heat transfer systems. Surfaces capable of lossless, long-range passive transportation of low surface tension (LST) liquids using wettability patterned, liquidlike coatings with minimal contact angle hysteresis are reported. Lossless LST droplet travel distances over 150 mm are achieved, enabled by a two-phase transportation mechanism: morphological transformation from a bulge to a channel shape, followed by directional transportation along the asymmetrical wedge-shaped channel. The developed surfaces can split, merge, and precisely transport various low-surface tension liquids, including alcohols, alkanes, and solvents. The developed transportation strategy can also enhance LST liquid dropwise condensation through continuous removal of the condensate, even on horizontally positioned surfaces without the assistance of gravity.     

The effect of small-signal AC voltages on C–V characterization and parameter extraction of SiO2 thin films

The effect of different small-signal ac voltage amplitudes on C–V curves characterized by thin SiO₂ based p-type MOS capacitor with aluminum gate is reported. When the small-signal ac voltage is comparable to the gate bias, the thickness of SiO₂ thin films extracted from the accumulation capacitance is found to be independent of small-signal ac voltage amplitudes, but the flat band voltage shift and interface state density associated with the variation of depletion layer capacitance are dependent on small-signal ac voltage amplitudes. They all increase with the small-signal ac voltage amplitudes. The experimental results reveal that the optimum small-signal ac voltage should be less than 100 mV. The mechanisms involving the depletion layer changes with small-signal ac voltages in SiO₂ thin films are also discussed in this paper.     

Voltage pulses change neural interface properties and improve unit recordings with chronically implanted microelectrodes

Current neuroprosthetic systems based on electrophysiological recording have an extended, yet finite working lifetime. Some posited lifetime-extension solutions involve improving device biocompatibility or suppressing host immune responses. Our objective was to test an alternative solution comprised of applying a voltage pulse to a microelectrode site, herein termed "rejuvenation." Previously, investigators have reported preliminary electrophysiological results by utilizing a similar voltage pulse. In this study we sought to further explore this phenomenon via two methods: 1) electrophysiology; 2) an equivalent circuit model applied to impedance spectroscopy data. The experiments were conducted via chronically implanted silicon-substrate iridium microelectrode arrays in the rat cortex. Rejuvenation voltages resulted in increased unit recording signal-to-noise ratios (10%/spl plusmn/2%), with a maximal increase of 195% from 3.74 to 11.02. Rejuvenation also reduced the electrode site impedances at 1 kHz (67%/spl plusmn/2%). Neither the impedance nor recording properties of the electrodes changed on neighboring microelectrode sites that were not rejuvenated. In the equivalent circuit model, we found a transient increase in conductivity, the majority of which corresponded to a decrease in the tissue resistance component (44%/spl plusmn/7%). These findings suggest that rejuvenation may be an intervention strategy to prolong the functional lifetime of chronically implanted microelectrodes.     

为烟雾检测器提供遥测报警

基于离子的烟雾检测器便宜且有效,除了安装在室内外,还经常安装在车库及其他室外建筑中,这些设计需要把报警信号送回房间或家庭安全系统.图1所示电路通过检测传感器警报时的工作电流提供检测器的遥测输出.正常监视模式下,工作电流只有50μA,触发报警时电流超过3mA.该电路由烟雾检测器的内部电池供电,对检测器影响很小.图中所示比较器具有较宽的工作电压范围、低工作电流和内置电压基准.典型静态工作电流小于3μA.     

平台2015:Intel处理器及平台在下一个十年的演化

毫无疑问,近年来计算技术取得了长足的进步。但是,在未来的十年,主流计算技术中新的工作量、使用模式的出现及变化对未来的计算平台提出的要求,与过去十年所取得的进展也差不多,这些巨大的要求包括:更高的性能、更低的功率密度、更好的功能可扩展性。倘若出现这些使用计算机的震撼性的变化,我们怎样定义和构架未来的计算平台,就将不得不做出引人注目的改变。要整体地理解和满足的,不仅仅有计算的需要,而且还有接口以及系统基础设施的需要。Intel对这三个基础平台要素的演化的长期设想,以及驱动演化的架构的创新和核心能力,即是我们称之为平台2015(Platform2015)的内容。除了考察相关的趋势、使用、平台处理含意之外,本文将集中在平台2015的计算单元,描述Intel微处理器架构在未来十年的演化。