In situ TEM observations of fracture in nanolaminated metallic thin films

Fracture of single crystal nanolaminated thin films has been investigated through in situ straining of cross-sectional samples of Cu/Ni nanolaminates grown on Cu (001) single crystal substrates. The earlest stages of deformation exhibits a confined layer slip mechanism. With continued straining, unstable fracture occurs creating a mixed-mode crack that propagates across the nanolaminate, roughly perpendicular to the interfaces. Eventually, stable crack growth with intense plastic deformation ahead of the crack tip occurs over many bilayers in the direction of crack growth. Simultaneously, plasticity was seen to spread only 1 or 2 bilayer distances normal to the crack, creating an extremely localized plastic zone. Transmission electron microscopic (TEM) examination after the test did not reveal the presence of dislocations in the crack wake, except where severe crack deflection was observed. By comparison, the plastic zone size in the substrate was greater by several of orders of magnitude.     

High slew-rate CMOS operational amplifier

A 0.8 /spl mu/m CMOS operational amplifier configuration with a slew rate in excess of 2 V/ns and a unity gain bandwidth of 55 MHz with a load capacitance of 15 pF is proposed. This employs a dynamic technique that turns on a large current source when the rate of change of input is larger than a pre-decided value.     

Structure and electrical characteristics of Ce4+-doped Ba2In2O5

The In-site of Ba₂In₂O₅ with Brownmillerite structure was partially substituted for Ce⁴⁺ ions in order to examine the doping effect on the order-disorder transition. Ba₂In_{2 – x} Ce _x O_{5 + x/2} (x = 0.1, 0.2, 0.3, 0.5, 1.0, and 1.5) were prepared by solid state reaction. X-Ray diffraction analyses of these powder samples demonstrated that Ba₂In_{2 – x} Ce _x O_{5 + x/2} (x = 0.1 and 0.2) possesses Brownmillerite structure. With increasing content of Ce⁴⁺ ion the crystal system of Ba₂In_{2 – x} Ce _x O_{5 + x/2} (x = 0.3, 0.5, and 1.0) changed to cubic perovskite structure above the order-disorder transition temperature of Ba₂In₂O₅. Arrhenius plots of the electrical conductivities of Ba₂In_{2 – x} Ce _x O_{5 + x/2} (x = 0.2, 0.3, and 1.0) exhibited no discontinuity. These compounds had high transference numbers of oxide ion above 973 k.     

Verhalten von Magnesiumlegierungen für Anwendungen im Fahrzeugbau bei mechanisch‐elektrochemischer Komplexbeanspruchung: Einfluss passivierender Deckschichten und Mechanismen der lokalen Schädigung

Behavior of Magnesium‐Alloys for Automotive Applications under Mechanical and Environmental Loading: Influence of Passivating Films and Mechanisms of Local Breakdown To assure an efficient design of components under cyclic loading, all available data concerning fatigue have to be observed. Therefore the influences of manufacturing on the material condition, the mechanical loads and environmental effects have to be analysed. Magnesium‐alloys are of special interest for lightweight applications because of their excellent strength‐density ratio. The corrosion resistance of magnesium‐alloys depends on the same factors that are critical to other metals. The alloys have a good stability to atmospheric exposure and a good resistance to attack by alkali, chromic and hydrofluoric acids. However, because of the electrochemical activity of magnesium, the relative importance of some factors is greatly amplified. The nature and composition of passive films formed on magnesium‐alloys depend on the prevailing conditions, viz. alloy‐composition, passivation potential, pH, electrolyte composition and temperature. Passive films may be damaged by local breakdown. Because of this, magnesium‐alloys suffer a degradation of their properties when exposed to an aqueous environment. The main topic of the present investigations is the verification of mechanisms of the local breakdown of the protecting film. At least two mechanisms are possible for this localization: mechanical breakdown by slip steps and electrochemical breakdown (for e.g. by the effects of chloride ions). Corrosion and passivation of different high purity alloys have been studied in different solutions (neutral, alkaline with specific anions and cations) using electrochemical techniques. The diecasted alloys were tested as produced and machined. The results clarified that depending on alloy/material and surface condition/corrosion environment different mechanisms for electrochemical breakdown of the protecting films are possible. Hence fatigue life under environmental loading is influenced by surface and testing conditions.     

A Digital Deformation Vacuum Gauge with an LC-Generator

The design of a sylphon bellows sensor and the basic circuits of an LC-generator and of a microprocessor unit are presented. An analytical pressure–frequency conversion function and a special method of adjusting the sensor ensure an error of less than 0.05%. The dynamic range is up to 10⁵. The instruments developed cover the ranges 10³, 10⁴, and 10⁵ Pa.     

Assessing stem cell research productivity

Honour Index (HoI), a method to evaluate research performance within different research fields, was derived from the impact factor (IF). It can be used to rate and compare different categories of journals. HoI was used in this study to determine the scientific productivity of stem cell research in the Asian Four Dragons (Hong Kong, Singapore, South Korea and Taiwan) from 1981 to 2001. The methodology applied in this study represents a synthesis of universal indicator studies and bibliometric analyses of subfields at the micro-level. We discuss several comparisons, and conclude the developmental trend in stem cell research for two decades. This revised version was published online in August 2006 with corrections to the Cover Date.     

A redundant multivalued logic for a 10-Gb/s CMOS demultiplexer IC

A redundant multivalued logic is proposed for high-speed communication ICs. In this logic, serial binary data are received and converted into parallel redundant multivalued data. Then they are restored into parallel binary data. Because of the multivalued data conversion, this logic makes it possible to achieve higher operating speeds than that of a conventional binary logic. Using this logic, a 1:4 demultiplexer (DEMUX, serial-parallel converter) IC was fabricated using a 0.18-/spl mu/m CMOS process. The IC achieved an operating speed of 10 Gb/s with a supply voltage of only 1.3 V and with power consumption of 38 mW. This logic may achieve CMOS communication ICs with an operating speed several times greater than 10 Gb/s.     

Lateral ion implant straggle and mask proximity effect

Lateral scattering of retrograde well implants is shown to have an effect on the threshold voltage of nearby devices. The threshold voltage of both NMOSFETs and PMOSFETs increases in magnitude for conventional retrograde wells, but for triple-well isolated NMOSFETs the threshold voltage decreases for narrow devices near the edge of the well. Electrical data, SIMS, and SUPREM4 simulations are shown that elucidate the phenomenon.     

Vector coupled-mode theory of dielectric waveguides

A consistent derivation of a system of vector coupled-mode (VCM) equations for parallel dielectric waveguides is presented and compared with earlier versions of the improved coupled-mode theory (ICMT). As a validity test, it is shown that the effectively scalar transverse electric and transverse magnetic (TM) coupled-mode (CM) equations are direct limits of our full VCM formulation. In particular, our formulation does not lead to the fundamental error found with earlier coupled-mode theories (CMTs) in a case of TM fields. Functional equations of our VCMT are consistent with Maxwell's equations and lead to higher precision. They can be applied to complicated arrays of strongly coupled parallel dielectric waveguides with true vectorial behavior.