MBE growth and microstructural evaluation of Zn(S,Se)-based LEDs and diode lasers

The use of a nitrogen radio frequency plasma source together with an appropriate quantum well configuration have recently resulted in the successful realization of p-type ZnSe by molecular beam epitaxy. This has enabled a variety of pn heterojunction based devices to be built including the first semiconductor injection lasers operating in the blue/green portion of the spectrum first reported by 3M and the Brown/Purdue group. In this paper, we discuss two lattice matched multiple quantum well structures that produce laser emission in the blue and blue/green portion of the spectrum.     

All-active monolithic InP-based HBT VCO with tunable HEMT inductor

A novel HEMT-HBT VCO is presented; it is the first all-active analogue VCO demonstrated using InP HEMT-HBT integrated MMIC technology. The MMIC monolithically integrates an InP common-collector HBT oscillator with a tunable InP HEMT active inductor using selective MBE. The novel HEMT-HBT VCO can provide performance advantages over analogue VCOs such as the multi-vibrator, and has direct implications for high speed clock recovery circuits needed in InP based optoelectronic IC applications     

A high-speed, low-power bipolar digital circuit for Gb/s LSI's:current mirror control logic

A novel low-power bipolar circuit for Gb/s LSIs, current mirror control logic (CMCL), is described. To reduce supply voltage and currents, the current sources of emitter-coupled-logic (ECL) series gate circuits are removed and the lower differential pairs are controlled by current mirror circuits. This enables circuits with the same function as two-stacked ECL circuits to operate at supply voltage of -2.0 V and reduces the current drawn through the driving circuits for the differential pairs to 50% of the conventional level shift circuits (emitter followers) in ECL. This CMCL circuit achieves 3.1-Gb/s (D-FF) and 4.3-GHz (T-FF) operation with a power supply voltage of -2.0 V and power dissipation of only 1.8 mW/(FF)     

Gain-flattened tellurite-based EDFA with a flat amplificationbandwidth of 76 nm

We describe a tellurite-based Er³⁺-doped fiber amplifier (EDFA) with a flat amplification bandwidth of 76 nm and a noise figure of less than 7 dB. Furthermore, a parallel-type amplifier composed of this EDFA and a 1.45-μm-band Tm³⁺-doped fluoride fiber amplifier achieved a flat amplification bandwidth of 113 nm     

Feature selection by analyzing class regions approximated byellipsoids

In their previous work, the authors have developed a method for selecting features based on the analysis of class regions approximated by hyperboxes. They select features analyzing class regions approximated by ellipsoids. First, for a given set of features, each class region is approximated by an ellipsoid with the center and the covariance matrix calculated by the data belonging to the class. Then, similar to their previous work, the exception ratio is defined to represent the degree of overlaps in the class regions approximated by ellipsoids. From the given set of features, they temporally delete each feature, one at a time, and calculate the exception ratio. Then, the feature whose associated exception ratio is the minimum is deleted permanently. They iterate this procedure while the exception ratio or its increase is within a specified value by feature deletion. The simulation results show that the current method is better than the principal component analysis (PCA) and performs better than the previous method, especially when the distributions of class data are not parallel to the feature axes     

Toughening of a Particulate-Reinforced Ceramic-Matrix Composite by Thermal Residual Stress

The micromechanics involved in increased crack growth resistance, K _R, due to the addition of TiB₂ particulate in a SiC matrix was analyzed both experimentally and theoretically. The fractography evidence, in which, the advancing crack was attracted to adjacent particulates, was attributed to the tensile region surrounding a particulate. Countering this effect is the compressive thermal residual stress, which results in the toughening of the composite, in the matrix. This thermal residual stress field in a particulate-reinforced ceramic-matrix composite is induced by the mismatch in the coefficients of thermal expansion of the matrix and the particulate when the composite is cooled from the processing to room temperature. The increase in K _R of the composite over the monolithic matrix, which was measured by using a hybrid experimental-numerical analysis, was 77%, and compared well with the analytically predicted increase of 52%. The increase in K _R predicted by the crack deflection model was 14%. Dependence of K _R on the volume fraction of particulates, f _p, and of voids, f _v, is also discussed.     

Dynamic Fracture Responses of Alumina and Two Ceramic Composites

A hybrid experimental-numerical procedure was used to characterize the dynamic fracture response of alumina (Al₂O₃) and TiB₂-particulate/SiC-matrix and SiC-whisker/Al₂O₃-matrix composites. Unlike metals and polymers, dynamic arrest stress intensity factors (SIFs) did not exist in the monolithic ceramics and the two ceramic composites considered. Thus a running crack in these materials cannot be arrested by lowering the driving force, i.e., the dynamic SIF. Fractography study of the alumina specimens showed that the area of transgranular failure varied from about 3% to about 16% for rapid crack extensions in statically and impact loaded specimens, respectively. The influence of kinematic constraints which enforces transgranular flat crack extension, despite the higher fracture energy of transgranular fracture, is discussed.     

Efficient PDFA module using high-NA PbF/sub 2//InF/sub 3/-based fluoride fiber

The highest reported single-pass gain coefficient of 0.36 dB/mW has been achieved using a newly developed Pr/sup 3+/-doped high-NA PbF/sub 2//InF/sub 3/-based fluoride fiber, with a /spl Delta/n of 6.6%, a core diameter of 1.2 /spl mu/m and a transmission loss of 250 dB/km at 1.2 /spl mu/m. This fiber was used to construct an efficient PDFA module with a MOPA-LD. A small-signal net gain of 22.5 dB was achieved at 1.30 /spl mu/m with a pump power of 23m mW.     

A new erasing and row decoding scheme for low supply voltageoperation 16-Mb/64-Mb flash memories

To improve the performance of high-density flash memories, several circuit technologies have been developed. A word-line boost and clamp scheme realizes low supply voltage read operations. A flash programming scheme utilizing Fowler-Nordheim (F-N) tunneling for programming before erasure and a negative gate biased erasing scheme accomplish low-power, high-speed, and 5-V-only erase operations. The chip size penalty is estimated to be only 3% for the 16-Mb flash memories     

Analysis and synthesis of tapered microstrip transmission lines

The input voltage reflection coefficient on a tapered microstrip transmission line is analyzed and a new Fourier transform pair is derived which introduces echo time and frequency as variables. Calculations of the input reflection coefficient take into account the frequency dispersion-characteristics of the effective permittivity. An efficient method is proposed for analysis and synthesis of microstrip tapers and numerical results are presented for microstrip exponential tapers and microstrip Chebyshev tapers