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61.
Ito T  Okamoto A  Funakoshi H  Sato K 《Applied optics》2007,46(13):2443-2452
We propose a novel phase-conjugate copying method for nondestructive readout of a volatile photorefractive hologram. In the one-crystal configuration, two holographic memories and a mutually pumped phase conjugator (MPPC) are formed within a single photorefractive crystal, instead of using multiple crystals. Two memories share the same hologram and complement each other in refreshing the hologram. A MPPC suppresses fanning noise and automatically aligns the wavefront of the reference and readout beams. We found the optimum configuration to achieve nondestructive readout from calculations and geometric consideration. In the experiments with a BaTiO(3) crystal, a continuous readout of 20 times longer than the recording time was achieved.  相似文献   
62.
A model for net primary productivity (NPP) estimation was developed based on a relationship between NPP estimated by the Chikugo model and the intensity-sum of the normalized difference vegetation index (NDVI) multiplied by the solar radiation during growth periods. There was a clear linear relationship between the estimated NPP and the intensity-sum (R 2=0.845), whose slope indicated the average light use efficiency (LUE) of global plants. The NPP estimation model (NDVI-based model), which included growth multipliers of optimum air temperature and soil water stress on vegetation growth with LUE, was developed. NDVI anomalies caused by scattering of volcanic ash from Mt Pinatubo were reduced by a correction based on intensity matching of channels 1 and 2 individually. NDVI retrieved a seasonal change pattern in 1991 and 1992 after the correction. Global NPP between 1988 and 1993 was estimated using the NDVI-based model, corrected NDVI, air temperature and soil water content data. There was a linear relationship between the estimated NPP and NPP observed in forests in China. The average global NPP during the 6 years was about 123?Pg dry weight per year, and the maximum and minimum NPP appeared in 1991 and 1988, respectively.  相似文献   
63.
The optical properties of experimental Au-Pt-based alloys containing a small amount of In, Sn, and Zn were investigated by spectrophotometric colorimetry to extract factors affecting color of Au-Pt-based high-karat dental alloys. It was found that the optical properties of Au-Pt-based alloys are strongly affected by the number of valence electrons per atom in an alloy, namely, the electron:atom ratio, e/a. That is, by increasing the e/a-value, activities of reflection in the long-wavelength range and absorption in the short-wavelength range in the visible spectrum apparently increased. As a result, the maximum slope of the spectral reflectance curve at the absorption edge, which is located near 515 nm (approximately 2.4 eV), apparently increased with e/a-value. Due to this effect, the b*-coordinate (yellow-blue) in the CIELAB color space considerably increased and the a*-coordinate (red-green) slightly increased with e/a-value. The addition of a third element with a higher number of valence electrons to the binary Au-Pt alloy is, therefore, effective in giving a gold tinge to the parent Au-Pt alloy. This information may be useful in controlling the color of Au-Pt-based dental alloys.  相似文献   
64.
Mesoporous activated carbon with high surface area (AC-Y-A) was prepared by carbonization followed by activation of vinylidene chloride copolymer containing yttrium acetylacetonate. Their performances as electrodes for electric double layer capacitor (EDLC) in tetraalkylammonium tetrafluoroborate (R4NBF4)/propylene carbonate (PC) or acetonitrile (AN) solutions were evaluated and compared with those of microporous activated carbons [AC and AC(CO2)]. The specific EDLC capacitances of the mesoporous AC-Y-A are almost the same as those of microporous AC at low discharge current. However, at high discharge current, the specific capacitance of AC-Y-A is much higher than those of both AC and AC(CO2) in PC and AN solutions. The capacitances decreased with increasing alkyl chain length of R4 N+ ions and discharge current. These results suggest that EDLC capacitance depends on pore size of activated carbons and smooth movement of R4 N+ ions in pores.  相似文献   
65.
The age-hardening mechanism in an AgCu-40 at% Au alloy was studied by means of electrical resistivity measurement, hardness tests, X-ray diffraction and electron microscopy. Two stages of hardening were found by isothermal ageing below 648 K, which was higher than the critical temperature of ordering, T c=620 K, in the present alloy. The first stage of hardening took place by formation of a modulated structure resulting from spinodal decomposition. Further hardening was brought about by ordering, yielding metastable AuCu I and/or AuCu II ordered platelets grown from the copper-rich portion of the modulated structure. Transitional ordering which gave rise to a marked hardening of the second stage was found, even though the temperature of below 648 K was higher than the T c of the present alloy. Drastic softening was also found on disappearance of the transitional ordered phases. Although the modulated structure was observed by ageing at 773 K, there was no age-hardening.  相似文献   
66.
Spodoptera frugiperda Sf-9 insect cells were infected with recombinant Autographa californica nuclear polyhedrosis virus at a low multiplicity of infection (MOI) (0.1), and the effect of dissolved oxygen (DO) on the production of a polyhedrin promoter-driven recombinant protein (beta-galactosidase), intrinsic proteases (carboxyl and cysteine proteases), and the virus was determined. The DO concentrations used in the present study were 45%, 25%, 5%, and 1.3% of air saturation. At 5% DO the cell growth following viral infection was greatest and beta-galactosidase was about 5-fold increased in volumetric yield compared to that at 45% and 25% DO, whereas the growth at 1.3% DO was extremely poor. The virus titer in the medium at 4-8 d post-infection (dpi) was also highest at 5% DO, but the titer was significantly decreased by further increasing the culture time. This was in part attributed to the fact that baculovirus is susceptible to oxidative inactivation under aerobic conditions. The DO dependency of the specific oxygen consumption rate of virus-infected and uninfected Sf-9 cells was expressed by a Monod-type equation. A critical DO, above which the rate of oxygen utilization is not limited by DO, was estimated to be 3.5% of air saturation for virus-infected Sf-9 cells. These results indicated that for a baculovirus-infected Sf-9 insect cell culture of low MOI, the optimal DO was likely to be approximately 5% of air saturation, which is above the critical DO for the infected Sf-9 cells but sufficiently low to reduce the possibility of the oxidative inactivation of virus. For the production of carboxyl and cysteine proteases, the accumulation behavior and concentrations did not significantly vary with DO, except that a peak of cysteine protease activity was observed intracellularly only at 5% DO, coinciding with beta-galactosidase production.  相似文献   
67.
The accuracy of a needle probe method in measuring localized magnetic properties of grain‐oriented electrical steel sheets was investigated and its application studied. The measuring error for the localized flux density was determined to be less than 1.7% for a load on the needle tip lighter than 300 g when the yoke structure was symmetrical with respect to the sheet plane. The average of localized iron losses measured with the combination of a needle probe and a Hall probe was in linear relation to the overall losses in the sheet. This method revealed that the localized magnetic properties vary markedly from location to location inside the sheet, and that localized iron loss depends on the localized flux density, domain wall spacing, and yaw angle of grain orientation. © 1999 Scripta Technica, Electr Eng Jpn, 126(4): 1–11, 1999  相似文献   
68.
We prototyped phase-change (PC) channel transistors and demonstrated two functions of nonvolatile memory and channel current control. We have developed prototype transistors that use a PC channel instead of a silicon channel. The PC material of a Ge2Sb2Te5 thin film with a thickness of 50 nm was used. We demonstrated a memory function whereby we achieved a reversible change between the crystalline and amorphous phases by applying a source-drain (SD) voltage for Joule heating. In the experiment, the applied voltages for PC between amorphous and crystalline phases were from 5 to 8 V. Control of the channel current was realized by applying a gate bias. The SD current was suppressed to less than 1/20 of that at a gate bias of -3 V by applying a gate bias of 0-3 V  相似文献   
69.
Experimental evaluation of impact ionization coefficients in GaN   总被引:1,自引:0,他引:1  
The impact ionization coefficient of electrons (αn) in GaN is determined as a function of the electric field strength from gate-current analysis in the prebreakdown regime of AlGaN/GaN heterojunction field effect transistors (HJFETs). The experimentally obtained αn, where the assumed effective length of the high electric field is precisely defined since its upper bound is closely limited due to the small gate-drain separation, agrees with that extrapolated from Monte Carlo simulation. It is experimentally confirmed that the breakdown field of GaN is higher than that of GaAs by a factor of about eight  相似文献   
70.
The effects of ion species/ion bombardment energy in sputtering deposition process on gate oxide reliability have been experimentally investigated. The use of xenon (Xe) plasma instead of argon (Ar) plasma in tantalum (Ta) film sputtering deposition for gate electrode formation makes it possible to minimize the plasma-induced gate oxide damage. The Xe plasma process exhibits 1.5 times higher breakdown field and five times higher 50%-charge-to-breakdown (QBD). In the gate-metal sputtering deposition process, the physical bombardment of energetic ion causes to generate hole traps in gate oxide, resulting in the lower gate oxide reliability. The simplified model providing a better understanding of the empirical relation between the gate oxide damage and the ion-bombardment energy to gate oxide in gate-metal sputtering deposition process is also presented.  相似文献   
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