Quasi-saturation capacitance behavior of a DMOS device

This paper reports a simulation study on the capacitance characteristics of a double-diffused metal-oxide semiconductor (DMOS) device operating in the quasi-saturation region. From the analysis, the capacitance effect of the gate oxide upon the drift region cannot be modeled as an overlap capacitance, because the drain-gate/source-gate capacitances of the DMOS device may exceed the gate-oxide capacitance due to the larger voltage drop over the gate oxide than the change in the imposed gate bias when entering the quasi-saturation region. This effect can be the explanation for the plateau behavior in the gate charge plot during turn-on and turn-off of the DMOS device. Based on the small-signal equivalent capacitance model, the accumulated charge in the drift region below the gate oxide may thoroughly associate with the drain terminal in the prequasi-saturation region and with the source terminal in the quasi-saturation region     

More investigations of leakage and nonleakage conductor-backedcoplanar waveguide

Through rigorous full-wave analysis, the effective dielectric constant, normalized attenuation constant, characteristic impedance, and radiation pattern of two types of conductor-backed coplanar waveguides are obtained. The analytic results show that the leakage effect is not only controlled by the thickness and dielectric constant of the substrate but also by the slot width. The leakage power transforms to a radiation space wave and a surface wave, the transverse electric field diagrams in the substrate and the far-zone radiation pattern verify the leakage phenomenon. The first structure has the maximum radiation intensity in the endfire direction, while the second one which has more leaky waves radiates into the air, is better served as a radiating device. For both structures under the nonleakage condition, the characteristic impedance is sensitive to the change of the strip width but not the slot width. Using these properties, the nonleaky and leaky circuits can exist on the same circuit board by choosing appropriate circuit dimensions     

Flows in rectangular microchannels driven by capillary force and gravity

Capillary phenomena was studied and discussed by the scholars about 200 years ago, but the progress was slow due to the limited equipment and manufacture precision of the microchannel. In recent years, because of the rapid development of MEMS and micromachining, many applications of the capillary flow is widely developing in some modern processes, such as underfilling of flip chip, flow in microfluidic chip or biochip, and a variety of other fields.     

A compact LTCC branch-line coupler UsingModified-T equivalent-circuit modelfor transmission line

In this letter, a compact branch-line coupler is proposed by making good use of the three-dimensional layout capability of the low-temperature co-fired ceramic (LTCC) substrate. This branch-line coupler is accomplished by using lumped-inductors and lumped-capacitors to realize the modified-T equivalent-circuit model for the transmission line so that the circuit size may drastically be reduced. Specifically, a very compact LTCC branch-line coupler with a size of 0.079/spl lambda//spl times/0.0717/spl lambda/ is implemented and carefully examined, where /spl lambda/ is the wavelength of the multilayer structure at the operating frequency f/sub 0/.     

Dynamic RSVP protocol

RSVP is a resource reservation setup protocol that can be used by a host to request specific QoS for multicast multimedia flows on the Internet. Multiprotocol label switching (MPLS) architecture also needs RSVP. The fact that the resolutions of the display system used in different receiver nodes might have different, multi-resolution characteristics is supported in the MPEG-4 standard, and the EZW compression algorithm can cease decoding at any point in the bitstream. However, RSVP does not provide a more flexible mechanism. In this article we propose an extension of RSVP to provide the needed mechanism, coined dynamic RSVP (DRSVP), to dynamically adjust reserved resources on nodes without much effort. It provides different video resolutions to different receiver nodes with different needed reserved resources. Therefore, it does not waste precious Internet resources to transmit unnecessary multimedia packets.     

A systematic design method to obtain broadband characteristics for singly-fed electromagnetically coupled patch antennas for circular polarization

We present a systematic, empirical design technique to obtain optimum broadband impedance, axial-ratio (AR) and gain bandwidths for a singly-fed electromagnetically coupled patch antenna for circular polarization. Our investigation has also revealed tradeoffs amongst obtainable AR, impedance bandwidth and AR bandwidth. Using two design examples at different frequency bands and for different senses of circular polarization, we have demonstrated the effectiveness of the proposed knowledge-based tuning method. We have obtained at C-band measured values of impedance bandwidth (VSWR/spl les/2) equal to 43%, 3-dB AR bandwidth of 8%, AR of less than 0.3 dB and a mean gain level of 7 dB. For the Ku-band element, a 40% impedance bandwidth and a 17.3% of 3-dB AR bandwidth have been obtained with a peak gain of 7.2 dBic.     

A novel technique for profiling the lateral n- dopingconcentrations of submicron LDD MOS devices

This paper reports a simple I-V method for the first time to determine the lateral lightly-doped source/drain (S/D) profiles (n^- region) of LDD n-MOSFETs. One interesting result is the direct observation of the reverse-short-channel effect (RSCE). It is observed that S/D n^- doping profile is channel length dependent if reverse short-channel effect exists as a result of the interstitial imperfections caused by Oxide Enhanced Diffusion (OED) or S/D implant. Not only the lateral profiles for long-channel devices but also for short-channel devices can be determined. One other practical application of the present method for device drain engineering has been demonstrated with a LATID MOS device drain engineering work. It is convincible that the proposed method is well suited for the characterization and optimization of submicron and deep-submicron MOSFETs in the current ULSI technology     

Accurate quasi-TEM spectral domain analysis of single and multiplecoupled microstrip lines of arbitrary metallization thickness

The quasi-TEM spectral domain approach (SDA) is extended to rigorously and efficiently analyze single and multiple coupled microstrip lines of arbitrary metallization thickness. The charge distributions on both the horizontal and vertical conductor surfaces are modeled by global basis functions. This results in a relatively small matrix for accurate determination of the line parameters of coupled thick microstrips. A convergence study is performed for the results of a pair of coupled lines with crucial structural parameters to explore the conditions for obtaining reliable solutions using the technique. Results for thick microstrips are validated through comparison with those from available measurements and another theoretical technique. The soundness of the technique is further demonstrated by looking into the trend of the results obtained by a simplified model in which the structural parameters are pushed, step by step, to the numerical extremities. Variations of circuit parameters of a four-line coupled microstrip structure due to the change of finite metallization thickness are presented and discussed     

Low-voltage BiCMOS dynamic minimum circuit using a parallelcomparison algorithm for fuzzy controllers

The authors present a low-voltage BiCMOS dynamic minimum circuit using a parallel comparison algorithm for VLSI implementation of fuzzy controllers. Using low-voltage BiCMOS dynamic circuits and a parallel comparison algorithm, a four-4-bit-input minimum circuit designed, based on a 1μm BiCMOS technology, shows a 9.5ns comparison time, which is a ×2.5 improvement in speed as compared to that based on CMOS technology     

Adaptive control of arterial blood pressure with a learningcontroller based on multilayer neural networks

The authors discuss a two-model multilayer neural network controller for adaptive control of mean arterial blood pressure (MABP) using sodium nitroprusside. A model with an autoregressive moving average (ARMA), representing the dynamics of the system, and a modified backpropagation training algorithm are used to design the control system to meet specified objectives of design (settling time and undershoot/overshoot) and clinical constraints. The controller is associated with a weighting-determinant unit (WDU) to determine and update the output weighting factor of the parallel two-model neural network for adequate control action and a control-signal modification unit (CMU) to comply with clinical constraints and to suppress the effect of adverse noise and to improve the WDU performance. Extensive computer simulations indicate satisfactory performance and robustness of the proposed controller in the presence of much noise, over the full range of plant parameters, uncertainties, and large variations of parameters