A system LSI memory redundancy technique using an ie-flash(inverse-gate-electrode flash) programming circuit

A new memory redundancy technique using inverse-gate-electrode flash (ie-flash) memory cells has been developed. The ie-flash can be fabricated by the conventional logic CMOS process, so no additional processes are necessary in using it in system LSIs, and it can be programmed by logic testers. We enhanced the reliability of ie-flash by using some circuits, increasing reliability to endure practical use. This new redundancy technique was successfully implemented in the cache memories of a 32-b RISC microprocessor     

Magnetic Resonance in ZnGeP2 and (Zn,Mn)GeP2

Electron paramagnetic (EPR) and ferromagnetic resonance (FMR) have been studied in the system of (Zn,Mn)GeP₂ ferromagnetic layer grown on undoped ZnGeP₂ single crystal. Strong FMR signals are registered in the wide temperature range up to room temperature. EPR and photo-EPR of intrinsic defects are observed in ZnGeP₂ substrate. EPR spectra characteristic of Mn²⁺ ions on Zn²⁺ sites in the bulk appear after the growth of the ferromagnetic layer on ZnGeP₂ crystal indicating the efficient Mn-diffusion into the bulk crystal by the annealing treatments.     

16.7-fA/cell tunnel-leakage-suppressed 16-Mb SRAM for handling cosmic-ray-induced multierrors

Tunnel-leakage currents become the dominant form of leakage as MOS technology advances. An electric-field-relaxation scheme that suppresses these currents is described. Cosmic-ray-induced multierrors have now become a serious problem at sea level. An alternate error checking and correction architecture for the handling of such errors is also described, along with the application of both schemes in an ultralow-power 16-Mb SRAM. A test chip fabricated by using 0.13-/spl mu/m CMOS technology showed per-cell standby-current values of 16.7 fA at 25/spl deg/C and 101.7 fA at 90/spl deg/C. The chip provided a 99.5% reduction in soft errors under accelerated neutron-exposure testing.     

Magnetic Resonance in ZnGeP2 and (Zn,Mn)GeP2

Electron paramagnetic (EPR) and ferromagnetic resonance (FMR) have been studied in the system of (Zn,Mn)GeP₂ ferromagnetic layer grown on undoped ZnGeP₂ single crystal. Strong FMR signals are registered in the wide temperature range up to room temperature. EPR and photo-EPR of intrinsic defects are observed in ZnGeP₂ substrate. EPR spectra characteristic of Mn²⁺ ions on Zn²⁺ sites in the bulk appear after the growth of the ferromagnetic layer on ZnGeP₂ crystal indicating the efficient Mn-diffusion into the bulk crystal by the annealing treatments.     

The result of cooling operation of Yazaki experimental solar house “one”

One of the important factors for designing solar house is to examine the most economic combination what is called optimum design between solar collector area and storage volume for the required energy demand. The result of experimentation gives the fundamental data for completing the computer simulation program that is effectively usable for designing solar house.     

New methods for measuring atlanto-axial vertical subluxation in rheumatoid arthritis by MR imaging]

This communication describes one pediatric neurosurgeon's personal view of the neurosurgical perspectives in pediatric neurooncology. Various roles of surgery, including histological verification, maximum cytoreduction, neurodecompression and restoration of the cerebrospinal fluid pathway, are emphasized. A pediatric neurosurgeon, who is the first person to make decisions on diagnosis and treatment relating to children with brain tumors, should be up to date with advances in diagnostic and therapeutic methods. Particularly, he or she should be familiar with both the efficacy and the side effects of radiation therapy and chemotherapy to allow selection of the optimum treatment for such children.     

InP/InGaAs double-heterojunction bipolar transistor with step-graded InGaAsP collector

An MOCVD-grown InP/InGaAs double-heterojunction bipolar transistor with a step-graded InGaAsP collector is described. This transistor allows high injection current densities over 2.9*10/sup 5/ A/cm/sup 2/, which suggests no significant current blocking related to the wide-gap InP layers. A cutoff frequency of 155 GHz and a maximum oscillation frequency of 90 GHz are obtained at the collector current density of 1.6*10/sup 5/ A/cm/sup 2/.<>     

Involvement of heat shock protein 90 in the degradation of mutant insulin receptors by the proteasome

We previously reported three families with type A insulin-resistant syndrome who had mutations, either Asp1179 or Leu1193, in the kinase domain of the insulin receptor. The extreme insulin resistance of these patients was found to be caused by the decreased number of insulin receptors on the cell surface, due to the intracellular rapid degradation (Imamura, T., Takata, Y., Sasaoka, T., Takada, Y., Morioka, H., Haruta, T., Sawa, T., Iwanishi, M., Yang, G. H., Suzuki, Y., Hamada, J., and Kobayashi, M. (1994) J. Biol. Chem. 269, 31019-31027). In the present study, we first examined whether these mutations caused rapid degradation of unprocessed proreceptors, using the exon 13 deleted mutant insulin receptors (DeltaEx13-IR), which were accumulated in the endoplasmic reticulum as unprocessed proreceptors. The addition of Asp1179 or Leu1193 mutation to DeltaEx13-IR caused accelerated degradation of the unprocessed DeltaEx13-IR in the transfected COS-7 cells. Next, we tested whether these mutant receptors were degraded by the proteasome. Treatment with proteasome inhibitors Z-Leu-Leu-Nva-H (MG-115) or Z-Leu-Leu-Leu-H (MG-132) prevented the accelerated degradation of these mutant receptors, resulting in increased amounts of the mutant receptors in the COS-7 cells. Essentially the same results were obtained in the patient's transformed lymphocytes. Finally, we found that these mutant receptors bound to heat shock protein 90 (Hsp90). To determine whether Hsp90 played an important role in the accelerated receptor degradation, we examined the effect of anti-Hsp90 antibody on the mutant receptor degradation. The microinjection of anti-Hsp90 antibody into cells prevented the accelerated degradation of both Asp1179 and Leu1193 mutant insulin receptors. Taken together, these results suggest that Hsp90 is involved in dislocation of the mutant insulin receptors out of the endoplasmic reticulum into the cytosol, where the mutant receptors are degraded by the proteasome.