Influence of device engineering on the analog and RF performances of SOI MOSFETs

This work presents a systematic comparative study of the influence of various process options on the analog and RF properties of fully depleted (FD) silicon-on-insulator (SOI), partially depleted (PD) SOI, and bulk MOSFET's with gate lengths down to 0.08 /spl mu/m. We introduce the transconductance-over-drain current ratio and Early voltage as key figures of merits for the analog MOS performance and the gain and the transition and maximum frequencies for RF performances and link them to device engineering. Specifically, we investigate the effects of HALO implantation in FD, PD, and bulk devices, of film thickness in FD, of substrate doping in SOI, and of nonstandard channel engineering (i.e., asymmetric Graded-channel MOSFETs and gate-body contacted DTMOS).     

2-D symmetry: theory and filter design applications

In this comprehensive review article, we present the theory of symmetry in two-dimensional (2-D) filter functions and in 2-D Fourier transforms. It is shown that when a filter frequency response possesses symmetry, the realization problem becomes relatively simple. Further, when the frequency response has no symmetry, there is a technique to decompose that frequency response into components each of which has the desired symmetry. This again reduces the complexity of two-dimensional filter design. A number of filter design examples are illustrated.     

Effect of anisotropy of tin on thermomechanical behavior of solder joints

Properties of body centered tetragonal tin are highly anisotropic. As a consequence large stresses can develop at the tin grain boundaries due to coefficient of thermal expansion mismatch during temperature excursions. A modeling approach to evaluate the 3D stress states that develop at grain boundaries during thermomechanical fatigue in tin-based solder is presented. Development of significant amounts of stresses in the plane of the grain boundary can cause grain-boundary sliding and surface-relief effects, while those normal to the grain boundary can cause grain-boundary decohesion and cracking.     

The effects of nonlocal impact ionization on the speed of avalanche photodiodes

The nonlocal enhancement in the velocities of charge carriers to ionization is shown to outweigh the opposing effects of dead space, increasing the avalanche speed of short avalanche photodiodes (APDs) over the predictions of a conventional local model which ignores both of these effects. The trends in the measured gain-bandwidth product of two short InAlAs APDs reported in the literature support this result. Relatively large speed benefits are predicted to result from further small reductions in the lengths of short multiplication regions.     

Inside Front Cover: The Elastic Properties and Plastic Behavior of Two‐Dimensional Polymer Structures Fabricated by Laser Interference Lithography (Adv. Funct. Mater. 10/2006)

The probing of the micromechanical properties within a two‐dimensional polymer structure with sixfold symmetry fabricated via interference lithography reveals a nonuniform spatial distribution in the elastic modulus “imprinted” with an interference pattern in work reported by Tsukruk, Thomas, and co‐workers on p. 1324. The image prepared by M. Lemieux and T. Gorishnyy shows how the interference pattern is formed by three laser beams and is transferred to the solid polymer structure. The elastic and plastic properties within a two‐dimensional polymer (SU8) structure with sixfold symmetry fabricated via interference lithography are presented. There is a nonuniform spatial distribution in the elastic modulus, with a higher elastic modulus obtained for nodes (brightest regions in the laser interference pattern) and a lower elastic modulus for beams (darkest regions in the laser interference pattern) of the photopatterned films. We suggest that such a nonuniformity and unusual plastic behavior are related to the variable material properties “imprinted” by the interference pattern.     

Start-up and steady-state results of a full-scale UASB reactor treating malting wastewater.

An Imhoff tank was reconstructed into a 250 m3 UASB reactor in order to treat a malting plant wastewater. The UASB was inoculated with sludge from an anaerobic lagoon used for slaughterhouse wastewater treatment. After two months of operation the reactor achieved full load with an HRT of 17 h, a COD removal higher than 80% and a biogas production of 300 m3/day (77% average methane content), with an organic loading rate of 3.6 kgCOD/m3.d (0.24 kgCOD/kgVSS.d). A yield coefficient of 0.09 gVSS/gCODrem was found from a mass balance. The fat present in the inoculated sludge (48 mg/gSSV) did not affect the start up performance. Sludge from the inoculum with high content of fat (270 mg/gSSV), was separated by flotation in the first week of operation. The COD removal efficiency was scarcely influenced by the reactor operation temperature (17-25 degrees C).     

Design procedure of class-E amplifier for off-nominal operation at 50% duty ratio

Design equations for satisfying the off-nominal operating condition [i.e., only the zero-voltage switching (ZVS) condition] of the Class-E amplifier with a linear shunt capacitance at a duty ratio D=0.5 are derived. A new parameter s (V/s), called the slope of switch voltage when the switch turns on is introduced to obtain an image of the distance from the nominal conditions. By examining off-nominal Class-E operation degree of the design freedom of the Class-E amplifier increases by one. In addition various amplifier parameters such as operating frequency, output power, and load resistance range can be set as design specifications. For example, the peak switch voltage and switch current can be taken into account in the design procedure. Examples of a design procedure of the Class-E amplifier for off-nominal operation are given. The theoretical results were verified with PSpice simulation and experiments.     

Curie Temperatures of III–V Diluted Magnetic Semiconductors Calculated from First-Principles in Mean Field Approximation

Electronic structure and ferromagnetism in III–V compound-based diluted magnetic semiconductors (DMS) are investigated based on first-principles calculations by using the Korringa-Kohn-Rostoker method combined with the coherent-potential-approximation. The stability of the ferromagnetic phase in GaN-, GaAs-, GaP-, GaSb-based DMS is investigated systematically. The calculations show that 3d-impurities from the first-half of the transition metal series favor the ferromagnetic state, while impurities from the latter-half of the series exhibit spin-glass behavior. This chemical trend in the magnetism is explained by the double exchange mechanism taking the local symmetry at the impurity gap states into account. Curie temperatures of GaAs- and GaN-based DMS are estimated by using the Heisenberg model in a mean field approximation with the parameters calculated from first-principles. It is suggested that room-temperature ferromagnetism can be realized in these systems.     

Serially concatenated space-time codes with iterative decoding and performance limits of block-fading channels

This work considers space-time channel coding for systems with multiple-transmit and a single-receive antenna, over space uncorrelated block-fading (quasi-static) channels. Analysis of the outage probability over such channels reveals the existence of a threshold phenomenon. The outage probability can be made arbitrary small by increasing the number of transmit antennas, only if the E/sub b//N/sub 0/ is above a threshold which depends on the coding rate. Furthermore, it is shown that when the number of transmit antennas is increased, the /spl epsi/-capacity of a block-fading Rayleigh channel tends to the Shannon capacity of an additive white Gaussian noise channel. This paper also presents space-time codes constructed as a serial concatenation of component convolutional codes separated by an interleaver. These schemes provide full transmit diversity and are suitable for iterative decoding. The rate of these schemes is less than 1 bit/s/Hz, but can be made arbitrary close to 1 bit/s/Hz by the use of Wyner-Ash codes as outer components. Comparison of these schemes with structures from literature shows that performance gains can be obtained at the expense of a small decrease in rate. Computer simulation results over block-fading Rayleigh channels show that the frame-error rate of several of these schemes is within 2-3 dB from the theoretical outage probability.