Planar lightwave integrated circuits with embedded actives for board and substrate level optical signal distribution

This paper explores design options for planar optical interconnections integrated onto boards, discusses fabrication options for both beam turning and embedded interconnections to optoelectronic devices, describes integration processes for creating embedded planar optical interconnections, and discusses measurement results for a number of integration schemes that have been demonstrated by the authors. In the area of optical interconnections with beams coupled to and from the board, the topics covered include integrated metal-coated polymer mirrors and volume holographic gratings for optical beam turning perpendicular to the board. Optical interconnections that utilize active thin film (approximately 1-5 /spl mu/m thick) optoelectronic components embedded in the board are also discussed, using both Si and high temperature FR-4 substrates. Both direct and evanescent coupling of optical signals into and out of the waveguide are discussed using embedded optical lasers and photodetectors.     

Profile-Driven Component Placement for Cluster-Based Online Services

The growth of the Internet and of various intranets has spawned a wealth of online services, most of which are implemented on local-area clusters using remote invocation (for example, remote procedure call/remote method invocation) among manually placed application components. Component placement can be a significant challenge for large-scale services, particularly when application resource needs are workload dependent. Automatic component placement has the potential to maximize overall system throughput. The key idea is to construct (offline) a mapping between input workload and individual-component resource consumption. Such mappings, called component profiles, then support high-performance placement. Preliminary results on an online auction benchmark based on J2EE (Java 2 Platform, Enterprise Edition) suggest that profile-driven tools can identify placements that achieve near-optimal overall throughput.     

Steady-state response of the parametrically excited axially moving string constituted by the Boltzmann superposition principle

Summary.  The steady-state transverse vibration of a parametrically excited axially moving string with geometric nonlinearity is investigated in this paper. The Boltzmann superposition principle is employed to characterize the material property of the string. The method of multiple scales is applied directly to the governing equation, which is a nonlinear partial-differential-integral equation. The solvability condition of eliminating the secular terms is established. Closed form solutions for the amplitude and the existence conditions of nontrivial steady-state response of the summation resonance are obtained. Some numerical examples showing effects of the viscoelastic parameter, the amplitude of excitation, the frequency of excitation, and the transport speed are presented. Received February 12, 2002; revised October 25, 2002 Published online: May 8, 2003 The research was supported by the National Natural Science Foundation of China (Project No. 10172056).     

Synthesis of Rice Processing Plants. I. Development of Simplified Models

This article, the first of three articles on the synthesis of rice processing plants, focuses on the development of simplified mathematical models necessary for use in optimizing rice processing plants. The second concentrates on the optimal synthesis of a rice plant and the third on the sensitivity of the optimization to uncertainty in model parameters. Existing models for rice processing unit operations are not suitable for flowsheet optimization and new models need to be developed to overcome numerical difficulties that occur in optimization applications, specifically in mixed integer nonlinear programming (MINLP) applications. Simplified models of the drying, cooling, and tempering units are developed. In addition head rice yield models, used as a quality indicator, energy consumption, and economic models were also developed. Naturally, the new models exhibit some mismatch with respect to the existing models from which they were developed. However, a sensitivity analysis, presented in Part III, has shown that the optimal flowsheet structure was not sensitive to a lack of fit between the simplified and complex models. The simplified models were found adequate to be appropriate for use at the synthesis stage.     

Damage Development in Gray Cast Iron under Static Deformation

The authors discuss the results of experimental investigation of structural degradation of gray cast iron at various stages of static tensile deformation. Analysis of the deformation process has revealed that damageability of a material under loading can be assessed by both a special strain parameter and scatter of hardness characteristics or a ratio of the modulus deviation to the current value of the elastic modulus. A correlation between these parameters has been established.     

Effect of the Distribution of Manganese Ions on the Properties of Mn-Doped (Ba,Y)TiO3 PTCR Ceramics

The electrical properties and microstructure of (Ba,Y)TiO₃ PTCR ceramics were studied. The results indicate that the Mn ions increase the intergranular barrier height and produce a high-resistance layer on the grain surface. The temperature-dependent resistances of the grain bulk, surface layer, and grain boundaries, the temperature coefficient of resistance, and the magnitude of the varistor effect were assessed as a function of Mn content.     

NMDA Receptor Modulation of Incidental Learning in Pavlovian Context Conditioning.

Rats exposed to a footshock show conditional fear when reexposed to the shock context. Immediate presentation of shock after placement in the context significantly reduces this fear. Preexposure to the context in the absence of shock, coupled with a minimum preshock interval during training, overcomes this immediate shock deficit. Because rats learn about the context during preexposure and express that learning after being reinforced, the context preexposure effect is an aversive analogue of latent learning. The authors examined the effect of the N-methyl-D-aspartate (NMDA) receptor antagonist D,L-2-amino-5-phosphovalerate (APV) on the facilitatory effect of context preexposure. Rats were preexposed to a chamber after APV administration. The next day they were placed in the same chamber without drug and received shock 35 s later. APV blocked the facilitatory effect of preexposure. Therefore NMDA receptors are important for contextual latent learning. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

Effects of SiN passivation and high-electric field on AlGaN-GaN HFET degradation

The authors report on the effects of silicon nitride (SiN) surface passivation and high-electric field stress (hot electron stress) on the degradation of undoped AlGaN-GaN power HFETs. Stressed devices demonstrated a decrease in the drain current and maximum transconductance and an increase in the parasitic drain series resistance, gate leakage, and subthreshold current. The unpassivated devices showed more significant degradation than SiN passivated devices. Gate lag phenomenon was observed from unpassivated devices and removed by SiN passivation. However, SiN passivated devices also showed gate lag phenomena after high-electric field stress, which suggests possible changes in surface trap profiles occurred during high-electric field stress test.     

Influence of device engineering on the analog and RF performances of SOI MOSFETs

This work presents a systematic comparative study of the influence of various process options on the analog and RF properties of fully depleted (FD) silicon-on-insulator (SOI), partially depleted (PD) SOI, and bulk MOSFET's with gate lengths down to 0.08 /spl mu/m. We introduce the transconductance-over-drain current ratio and Early voltage as key figures of merits for the analog MOS performance and the gain and the transition and maximum frequencies for RF performances and link them to device engineering. Specifically, we investigate the effects of HALO implantation in FD, PD, and bulk devices, of film thickness in FD, of substrate doping in SOI, and of nonstandard channel engineering (i.e., asymmetric Graded-channel MOSFETs and gate-body contacted DTMOS).