New possibilities of chemical beneficiation of synnirites

Institute of Geology Siberian Branch, Academy of Sciences of the USSR, Novosibirsk. Translated from Fiziko-Tekhnicheskie Problemy Razrabotki Poleznykh Iskopaemykh, No. 1, pp. 106–109, January-February, 1992.     

Carrier multiplication in submicrometre pMOS transistors operated at cryogenic temperatures

The temperature and bias dependence of the carrier multiplication M(I/sub bulk//I/sub drain/) in submicrometre pMOS transistors has been characterised and studied over the temperature range of 30-300 K. In addition, a model which reproduces the bias dependence of M over the measured range of temperature can be extrapolated down to 4.2 K to predict the internal bulk potential and its related 'kink effect'. The agreement between data and the prediction of the model confirms that the gate voltage and temperature dependence of the mean free path plays the key role in determining the carrier multiplication characteristics of submicrometre pMOS transistors, operating in the temperature range of 4.2-300 K.<>     

Gradient interpenetrating polymer networks

The methods of synthesis and properties of gradient interpenetrating polymer networks (IPN) are discussed based on literature and authors' own experimental data. Gradient IPN can be treated as a sequence of an infinite number of layers of IPNs, whose composition and properties vary gradually from the surface to the core of specimens. These are analysed the most important properties of gradient IPNs: temperature transitions, thermodynamic and physico-mechanical characteristics and the main direction of practical application of gradient IPN-based materials.     

Breaking the Nyquist barrier

The author discusses the concept that data sampled beyond the Nyquist frequency is meaningless. A simple signal processing scheme to extend resolution to nearly twice the Nyquist without the problem of alias emerged. It starts by placing one-dimensional signals into a simulated sample-and-hold process in a Mathcad application     

Comparative study of crystallization processes in Sb2Te3 films using laser and thermal annealing techniques

Adherent and pin-hole free amorphous Sb₂Te₃ thin films have been obtained by vacuum evaporation at substrate temperatures ≤25 °C. The films have been crystallized by thermal and laser annealing, and the crystallization processes monitored as a function of annealing temperature and laser scan speed. A comparative study of topography reveals disk-shaped crystallized areas in thermal crystallization and dendrite growth in the laser induced process. The crystallized films in both cases contain a single Sb₂Te₃ phase. Activation energy of 2 eV for crystallization, determined using differential scanning calorimetery indicates good room temperature stability of the amorphous states.     

An automatic machine for bending a furniture fitting tie rod

Translated from Khimicheskoe i Neftyanoe Mashinostroenie, No. 8, pp. 31–32, August, 1992.