Effect of rotor profiles on the torque of a switched-reluctancemotor

The authors examine effects on the torque that simple variations of the standard rotor pole face profile could have, basically from an elementary viewpoint of how the modified profiles affect the distribution and magnitude of the radial and tangential components of the flux density. It is observed that the average torque is mostly affected by changes that alter the dominant radial component, such as changes in the effective air gap length. The other observation that an increase in the average torque can also be obtained by a favorable shift in the torque versus angle characteristics by relatively simple changes of the rotor pole profile is not so well known. Such a shift that reduces the slope of the torque angle characteristic, skewing the curve towards the unaligned position, has two advantages: one is that the phase inductance is at its maximum positive slop and, hence, the maximum torque, when the phase is energized; second, the flatter inductance profile near the aligned position when the phase current is to be commutated would allow a faster drop off of the commutated current and, thus, a smaller negative torque     

Cable insulation density profile determined from ultrasonicvelocity measurements

Density results obtained on the same cable sample with a column and from ultrasonic measurements are reported. A calibration curve relating ultrasonic velocity and cable insulation density is given for PE and crosslinked PE (XLPE) cables. The limits and advantages of deducing density profiles of cable insulation using a focused, ultrasound beam rather than the more time-consuming column measurements are discussed     

Multiterminal light-emitting logic device electricallyreprogrammable between OR and NAND functions

A monolithic multiterminal logic device that functions both optically and electrically as an ORNAND gate, is demonstrated for the first time. The device, based on the real-space transfer of hot electrons into a complementary collector layer, has been implemented in an InGaAs/InAlAs/InGaAs heterostructure grown by molecular beam epitaxy. Excellent performance is obtained at room temperature. The collector current and the optical output power both exhibit the OR and the NAND functions of any two of the three input terminals, these functions being interchangeable by the voltage on the third terminal     

Analysis and Modelling of the LPC VD Annular Reactor

This paper presents the results of our work on a new type of CVD reactor, annular reactor. This equipment is able to deposit pure silicon and also in-situ phosphorus doped silicon on a large number of substrates     

Application of evolutionary programming to transient andsubtransient parameter estimation

This paper presents an artificial intelligence approach of using evolutionary programming to estimate the transient and subtransient parameters of a generator under normal operation. The estimation using evolutionary programming is compared with that using a corrected extended Kalman filter. The comparisons with both simulation and micromachine test results show that evolutionary programming is robust to search the real values of parameters even when the data are highly contaminated by noise, while with the extended Kalman filter, the estimation tends to diverge with such data     

A new erasing method for a single-voltage long-endurance flashmemory

A new method to erase a standard (double-poly, stacked-gate NOR-type) flash cell is proposed. The method, still using the tunneling mechanism to extract electrons from the floating gate, is based on the concept of keeping the electric field constant during the whole erasing operation. The new method has two main advantages with respect to the conventional one: (1) it does not depend on the supply voltage variation and (2) it allows a better reliability in terms of endurance-induced stress. Results have shown that flash device performances are greatly improved in terms of stability and endurance reliability up to one million cycles     

Ultralow-voltage boron-doped diamond field emitter vacuum diode

A boron-doped diamond field emitter diode with ultralow turn-on voltage and high emission current is reported. The diamond field emitter diode structure with a built-in cap was fabricated using molds and electrostatic bonding techniques. The emission current versus anode voltage of the capped diamond emitter diode with boron doping, sp² content, and vacuum thermal electric (VTE) treatment shows a very low turn-on voltage of 2 V. A high emission current of 1 μA at an anode voltage of less than 10 V can be obtained from a single diamond tip. The turn-on voltage is significantly lower than comparable silicon field emitters     

A novel method for elimination of line-current harmonics insingle-stage PFC switching regulators

This paper studies a particular single-stage power-factor-correction (PFC) switching regulator employing a discontinuous-conduction-mode (DCM) boost-input cell and a continuous-current-mode (CCM) forward output cell. Although this single-stage PFC regulator can provide a reasonably high power factor when its PFC stage is operating in discontinuous mode, substantial reduction in line-current harmonics is possible by applying a suitable frequency-modulation scheme. This paper derives a frequency-modulation scheme and proposes a practical implementation using a simple translinear analog circuit. A quantitative analysis on the total harmonic distortion (THD) of the line current when the circuit is subject to a limited range of frequency variations is presented along with some considerations for practical design. Experimental data obtained from a prototype confirms the effectiveness of the proposed frequency-modulation scheme. The proposed analog translinear circuit allows custom integrated circuit implementation, making it a viable low-cost solution to the elimination of line-current harmonics in switching regulators