Algebraic-grammatical models of parallel computation

The survey focuses on algebraic-grammatical models of parallel processes, representation of knowledge about classes of algorithms in terms of a variety of production systems (structured design grammars), and program generation tools.Translated from Kibernetika i Sistemnyi Analiz, No. 5, pp. 5–13, September–October, 1991.     

Fitting Square Pegs into Round Holes

By nature, cryptographers tend to be extremely cautious and conservative. From their perspective, spending time getting people to use a new cryptographic algorithm is roughly on par with getting involved in a land war in Asia. In some cases, however, the difficulty involved in developing a new algorithm is worth the effort. This is the case with identity-based encryption (IBE), a new type of public-key algorithm     

Influence of coherent structures on mass transfer near stagnation region in agitated small tanks

Electrochemical method is applied to study coherent structures in a complex three-dimensional flow generated by a rotating magnetic rod. In order to detect these structures, the power spectral density (PSD) analysis of the limiting diffusion current fluctuations is provided. This analysis reveals the existence of resonance frequencies when the probe is located in the very vicinity of the stirrer. The main resonance is related to the mechanical excitation frequency. The detailed analysis of the PSD curves points out some mechanisms of development of turbulence as sub-harmonics and non-linear interactions. For different locations of the probe and different angular rates of the stirrer Ω, a similarity of the energy repartition is obtained when the PSD is plotted versus the adimensional frequency f/Ω. Flow visualization by laser tomography is also provided and the local secondary flow past the electrode probe is sketched. The laser Doppler velocimetry (LDV) at a given location in a horizontal z-plane indicates a tornado wise mean flow structure.     

Overview of ship-design expert systems

Expert systems constitute a branch of artificial intelligence, and their unique characteristics enable computer systems to perform at the level of a human expert by the use of algorithms that can capture domain-specific knowledge. Through an extensive survey of research about ship-design expert systems, we conclude that although development and implementation of expert systems for ship design offer substantial barriers, the shipbuilding industry needs them nonetheless. We examine the major reasons that use of expert systems in this industry has lagged behind. These include the problems of integration with existing computer-aided design systems, problems of knowledge representation and sizable development costs. We discuss in detail some key factors that can lead to the solution of these problems.     

Single-frequency, single-knob tuning of a CW color center laser

We describe a simple way to achieve CW single-frequency laser operation with a grating as the sole tuning element. It is Shown, both experimentally and theoretically, that by proper choice of cavity parameters, the competing hole burning modes can be completely suppressed. Experiments to demonstrate the theoretical calculations were carried out in a CW color center laser using Tl⁰(1) centers. Linewidths of 0.01 cm^-1were obtained and this figure can probably be much improved by proper cavity stabilization. The method can be readily extended to any compact gain medium.     

Asymptotic analysis of queues in multiple-access computer networks

The paper considers local-area computer networks with a protocol that supports carrier-sense multiple access with instantaneous conflict detection and is a generalization of slotted ALOHA. An approach based on recurrent processes is applied to analyze the asymptotic behavior of the number of waiting calls under conditions of low retrial rate.Translated from Kibernetika i Sistemnyi Analiz, No. 4, pp. 54–61, July–August, 1991.     

Electromagnetic scattering by a straight thin wire

The traveling-wave energy, which multiply diffracts on a straight thin wire, is represented as a sum of terms, each with a distinct physical meaning, that can be individually examined in the time domain. Expressions for each scattering mechanism on a straight thin wire are cast in the form of four basic electromagnetic wave concepts: diffraction, attachment, launch, and reflection. Using the basic mechanisms from P.Ya. Ufimtsev (1962), each of the scattering mechanisms is included into the total scattered field for the straight thin wire. Scattering as a function of angle and frequency is then compared to the moment-method solution. These analytic expressions are then extended to a lossy wire with a simple approximate modification using the propagation velocity on the wire as derived from the Sommerfeld wave on a straight lossy wire. Both the perfectly conducting and lossy wire solutions are compared to moment-method results, and excellent agreement is found. As is common with asymptotic solutions, when the electrical length of wire is smaller than 0.2 λ the results lose accuracy. The expressions modified to approximate the scattering for the lossy thin wire yield excellent agreement even for lossy wires where the wire radius is on the order of skin depth     

Systematic characterization of Cl2 reactive ion etchingfor improved ohmics in AlGaN/GaN HEMTs

Pre-metal-deposition reactive ion etching (RIE) was performed on an Al_0.3Ga_0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs