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41.
In this paper, we consider the mobility management in large, hierarchically organized multihop wireless networks. The examples of such networks range from battlefield networks, emergency disaster relief and law enforcement etc. We present a novel network addressing architecture to accommodate mobility using a Home Agent concept akin to mobile IP. We distinguish between the physical routing hierarchy (dictated by geographical relationships between nodes) and logical hierarchy of subnets in which the members move as a group (e.g., company, brigade, battalion in the battlefield). The performance of the mobility management scheme is investigated through simulation.  相似文献   
42.
Mobile computing is the way of the future, as evident by such initiatives as Bluetooth, Iceberg and HomeRF. However, for mobile computing to be successful, an obvious layer, the MAC layer, must be efficient in channel access and reservation. Therefore, in-depth understanding is needed of the wireless MAC layer if wireless computing is to takeoff. Many random access wireless MAC protocols have been proposed and even standardized. However, there has yet been an attempt to understand why certain designs are used and what makes certain protocols better than others. In this paper, we survey several popular, contemporary, wireless, random access MAC protocols and determine the effects behind the design choices of these protocols.  相似文献   
43.
The explosive growth of cellular networks makes their deployment and maintenance more and more complex, time consuming, and expensive. Self-Organizing Networks have been recognized as a promising way to alleviate this problem by minimizing human intervention in such processes. This paper introduces a novel multiobjective framework, based on evolutionary optimization, aiming at improving network performance and users Quality of Service. By tuning the transmitted power at each cell, average intercell interference levels are minimized. The design of the proposed scheme is feasible for distributed implementations in Long Term Evolution (LTE) and LTE-Advanced networks and its operation is compatible with current specifications. The framework is able to provide effective network-specific optimization and obtained results show that gains in terms of network capacity and cell edge performance are 5 and 10 %, respectively. Energy savings always accompanied such enhancements with reductions up to 35 %.  相似文献   
44.
The implementation of higher shares of renewables in a global energy mix has to be accompanied by simultaneous deployment of enabling smart grid technologies (SGTs). This combination will inevitably lead to a revolutionary change in a conventional energy system, particularly, the shifting role of consumers to prosumers. But resistance may arise from such a dramatic shift, since it is associated with high uncertainty in conjunction with increasing responsibilities of all stakeholders, the urgent need of effective control, and the development of a process. To ensure the positive influence, coherent actions of all players, and appropriate treatment of the spots of resistance, the analysis of the interplay between key stakeholders has been done. The paper introduces the framework for stakeholders' analysis, applies it on the European Union (EU) example, and provides recommendations to reduce the resistance of SGTs deployment.  相似文献   
45.
We report a hybrid AlGaInAs-silicon evanescent amplifier incorporating a silicon waveguide with a III-V gain medium. The optical mode of the hybrid amplifier is mostly confined to the silicon waveguide and evanescently coupled to the AlGaInAs quantum-well (QW) region where optical gain is provided by electrical current injection. These two different material systems are bonded by low-temperature oxygen plasma assisted wafer bonding at 300 degC. The fabricated device shows 13 dB of maximum chip gain with 11 dBm of output saturation power. Evanescent coupling allows a lower active region confinement factor to provide a higher saturation output power than amplifiers with centered QWs, which is important for applications that require linear amplification  相似文献   
46.
Buried‐channel semiconductor heterostructures are an archetype material platform for the fabrication of gated semiconductor quantum devices. Sharp confinement potential is obtained by positioning the channel near the surface; however, nearby surface states degrade the electrical properties of the starting material. Here, a 2D hole gas of high mobility (5 × 105 cm2 V?1 s?1) is demonstrated in a very shallow strained germanium (Ge) channel, which is located only 22 nm below the surface. The top‐gate of a dopant‐less field effect transistor controls the channel carrier density confined in an undoped Ge/SiGe heterostructure with reduced background contamination, sharp interfaces, and high uniformity. The high mobility leads to mean free paths ≈ 6 µm, setting new benchmarks for holes in shallow field effect transistors. The high mobility, along with a percolation density of 1.2 × 1011cm?2, light effective mass (0.09me), and high effective g‐factor (up to 9.2) highlight the potential of undoped Ge/SiGe as a low‐disorder material platform for hybrid quantum technologies.  相似文献   
47.
We investigated the effect of solvents on the morphology, charge transport and device performance of poly[N-9″-hepta-decanyl-2,7-carbazole-alt-5,5-(4′,7′-di-2-thienyl-2′,1′,3′-benzothiadiazole)] (PCDTBT) and [6,6]-phenyl C71-butyric acid methyl ester (PC70BM) based solar cells. To carry out this investigation, chloroform and 1,2-dichlorobenzene were chosen as good solvents of the two compounds. Films prepared with chloroform exhibit larger domains than those prepared with 1,2-dichlorobenzene and their size increases with the amount of PC70BM. Fine tuning of the domain size was realized by using a solvent of mixed chloroform and 1,2-dichlorobenzene. At a mixing ratio of 50%:50%, a power conversion efficiency of 6.1% was achieved on PCDTBT:PC70BM (1:3) devices with an active area of 1 cm2, under air mass 1.5 global (AM 1.5 G) irradiation at 100 mW/cm2.  相似文献   
48.
The phase-change memory (PCM) technology is considered as one of the most attractive non-volatile memory concepts for next generation data storage. It relies on the ability of a chalcogenide material belonging to the Ge-Sb-Te compound system to reversibly change its phase between two stable states, namely the poly-crystalline low-resistive state and the amorphous high-resistive state, allowing the storage of the logical bit. A careful study of the phase-change material properties in terms of the set operation performance, the program window and the electrical switching parameters as a function of composition is very attractive in order to enlarge the possible PCM application spectrum. Concerning the set performance, a crystallization kinetics based interpretation of the observed behavior measured on different Ge-Sb-Te compounds is provided, allowing a physics-based comprehension of the reset-to-set transition.  相似文献   
49.
50.
A fast method for the design of circular and equilateral triangular microstrip antennas, based on a Neuro-Fuzzy Network, is presented. Numerical results obtained by using this technique agree quite well with the Moment Method results. The proposed technique can be fruitfully used in microwave and millimeter wave CAD applications.  相似文献   
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