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181.
ABSTRACT: The absorbance of 2,2-diphenyl-1-picrylhydrazyl (DPPH) at 517 nm in methanol and acetone decreased by 20 and 35% for 120 min at 25 °C under light, respectively; in the dark it did not change significantly for 150 min. Decomposition of DPPH under 21% oxygen after 90 min under light was significantly higher than that under 1% oxygen. Absorbance of DPPH in pH 4 buffer solution in methanol, and in pH 10 buffer solution in acetone, decreased by 55 and 80%, respectively, under light for 120 min. The evaluation of antioxidant activity by the changes of DPPH absorbance should be carefully interpreted since the absorbance of DPPH at 517 nm is decreased by light, oxygen, pH, and type of solvent in addition to the antioxidant. 相似文献
182.
This paper presents an orientation-based representation for planar curves and shapes. The new representation can uniquely represent all types, of planar shapes, be it convex, nonconvex, polygonal, smoothly curved, or piecewise smooth shapes. It is based on a new parameterization, theabsolute integral orientation. This representation is invariant under translation and rotation. The absolute integral orientation is a parameter invariant under scaling. As a result, matching of similar shapes (i.e., determination of the relative orientation and the scaling factor) using the absolute integral orientation as the parameter is easier than using the arclength as the parameter. In addition, the new representation has the feature of adaptive sampling, making it more compact and efficient than arc-length-based representations. 相似文献
183.
A MOSFET structure with a nonoverlapped source/drain (S/D) to gate region was proposed to overcome the challenges in sub-50-nm CMOS devices. Key device characteristics were investigated by extensive simulation study. Fringing gate electric field through the spacer induces an inversion layer in the nonoverlap region to act as an extended S/D region. An oxide spacer is used to reduce parasitic gate overlap capacitance. A reasonable amount of inversion electrons were induced under the spacers. Internal physics, speed characteristics, short channel effects, and RF characteristics were studied with the nonoverlap distance at a fixed metallurgical channel length of 40 nm. The proposed structure had good drain-induced barrier lowering and V/sub T/ rolloff characteristics and showed reasonable intrinsic gate delay and cutoff frequency compared to those of an overlapped structure. 相似文献
184.
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186.
Spectral characteristics of vertical-cavity surface-emitting lasers with external optical feedback 总被引:4,自引:0,他引:4
Y.C. Chung Y.H. Lee 《Photonics Technology Letters, IEEE》1991,3(7):597-599
The measurement of the effects of external optical feedback on the spectra of VCSELs (vertical-cavity surface-emitting lasers) is reported. It is surprising that VCSELs have a sensitivity to optical feedback comparable to that of conventional edge-emitting lasers such as DFBs despite their significantly different structures. This is because the extremely short cavity length of VCSELs negates the effects of their highly reflective output mirrors. As in edge-emitting lasers, VCSELs exhibit well-defined regimes of feedback effects in their spectra. Since optical isolators cannot be easily applied to VCSELs due to their array structure, these lasers may be most useful in applications which are not sensitive to the spectral qualities of the light source.<> 相似文献
187.
Yan R.-H. Lee K.F. Jeon D.Y. Kim Y.O. Park B.G. Pinto M.R. Rafferty C.S. Tennant D.M. Westerwick E.H. Chin G.M. Morris M.D. Early K. Mulgrew P. Mansfield W.M. Watts R.K. Voshchenkov A.M. Bokor J. Swartz R.G. Ourmazd A. 《Electron Device Letters, IEEE》1992,13(5):256-258
The authors report the implementation of deep-submicrometer Si MOSFETs that at room temperature have a unity-current-gain cutoff frequency (f T) of 89 GHz, for a drain-to-source bias of 1.5 V, a gate-to-source bias of 1 V, a gate oxide thickness of 40 Å, and a channel length of 0.15 μm. The fabrication procedure is mostly conventional, except for the e-beam defined gates. The speed performance is achieved through an intrinsic transit time of only 1.8 ps across the active device region 相似文献
188.
Sang-Hoon Lee Dae Hwan Kim Kyung Rok Kim Jong Duk Lee Byung-Gook Park Young-Jin Gu Gi-Young Yang Jeong-Taek Kong 《Nanotechnology, IEEE Transactions on》2002,1(4):226-232
A practical model for a single-electron transistor (SET) was developed based on the physical phenomena in realistic Si SETs, and implemented into a conventional circuit simulator. In the proposed model, the SET current calculated by the analytic model is combined with the parasitic MOSFET characteristics, which have been observed in many recently reported SETs formed on Si nanostructures. The SPICE simulation results were compared with the measured characteristics of the Si SETs. In terms of the bias, temperature, and size dependence of the realistic SET characteristics, an extensive comparison leads to good agreement within a reasonable level of accuracy. This result is noticeable in that a single set of model parameters was used, while considering divergent physical phenomena such as the parasitic MOSFET, the Coulomb oscillation phase shift, and the tunneling resistance modulated by the gate bias. When compared to the measured data, the accuracy of the voltage transfer characteristics of a single-electron inverter obtained from the SPICE simulation was within 15%. This new SPICE model can be applied to estimating the realistic performance of a CMOS/SET hybrid circuit or various SET logic architectures. 相似文献
189.
Removal of gaseous and vapor constituents of environmental tobacco smoke (ETS) by activated carbons in a packed bed arrangement was studied under dynamic conditions and was compared with that by silica gel and molecular sieve 13X. ETS is a mixture of sidestream smoke and exhaled mainstream smoke, and it consists of various organic and inorganic compounds, trace heavy metals, and particulate matters. Due to the complex nature of ETS-air mixture, its removal from indoors is a challenging task. For experimentation in a laboratory, the ETS was produced from a specially designed smoking apparatus that simulated the puffng of a cigarette by a person. Air containing ETS was passed through a bed containing about 25 grams of activated carbon at room temperature. The flow rate of air-ETS mixture through the bed was 4000 cm3/min. The relative humidity of the air was 50% and contained about 35 to 40 ppm of hydrocarbons as measured as methane-equivalent. The number of particles in the inlet air stream were in the range of 30,000 to 35,000 particles/cm3. About 60% of hydrocarbons present in ETS were removed at these operating conditions for a period of about 70 hours. Based on 15 adsorption and regeneration cycles, it was noted that the carbon bed did not loose its capacity for ETS significantly as indicated by the BET surface area and water adsorption data. At the beginning of an adsorption cycle, the carbon bed captured a significant number of particles. However, the bed rapidly lost its particle capture effciency as the experiment progressed. The number of particles in the outlet air stream was found to be the same as that of the inlet stream within five minutes. 相似文献
190.