多元羧酸防皱机理的探讨

多元羧酸的防皱机理是近期织物防皱整理研究讨论的热点。其中，催化剂在体系中所起的作用现有多种说法，如催化成酐，催化成酯，以及既催化成酐又催化成酯和其他一些观点。本文就多元羧酸的防皱机理作一分析和归纳，并提出一些看法。     

电站锅炉制粉系统的爆炸原因与防范对策

火力发电厂制粉系统爆炸事故时有发生 ,重大设备损坏 ,造成了严重的经济损失。本文通过分析研究 ,找出制粉系统爆炸的原因 ,从措施上、煤的质量控制上及制粉系统结构改造上提出了防范的对策。     

Impact of nonlinear phase noise on direct-detection DQPSK WDM systems

The performance degradation of differential quadrature phase-shift keying (DQPSK) wavelength-division-multiplexed (WDM) systems due to self-phase modulation (SPM)- and cross-phase modulation (XPM)-induced nonlinear phase noise is evaluated in this letter. The XPM-induced nonlinear phase noise is approximated as Gaussian distribution and summed together with the SPM-induced nonlinear phase noise. We demonstrate that 10-Gb/s systems, whose walkoff length is larger than 40-Gb/s systems', are more sensitive to XPM-induced nonlinear phase noise than 40-Gb/s systems. Furthermore, DQPSK WDM systems show lower tolerance to both SPM- and XPM-induced nonlinear phase noise than differential phase-shift keying WDM systems.     

线性二次型最优控制闭环系统极点的必要条件

本文推导了线性二次型（LQ）最优控制闭环系统极点应满足的必要条件，以及与加权阵Q和R的等式关系     

APT（STLRI）—1.78型单模光纤（缆）连接器简介

利用引进的制造技术和设备,制作出了 APT(STLRI)—1.78型系列化光纤连接器。     

花坝二级电站引水隧洞混凝土裂缝成因与对策

混凝土的裂缝问题是一个普遍存在而又难于解决的工程实际问题，现对花坝二级电站引水隧洞工程中衬砌混凝土出现裂缝的原因进行分析，并针对出现的混凝土裂缝的具体情况，提出一些简单的预防和处理对策。     

磷矿的电选试验研究

清水沟中低品位磷矿性质复杂，嵌布粒度细，磨至-0．174mm 92．8％，通过振动—气流联合作用摩擦荷电，采用悬浮电选机经-粗-精-扫电选。可由含P2O5为24．47％的原矿获得含P2O5为30．23％。回收率为83．26％，杂质含量合格的磷精矿。     

Enhanced light output in nitride-based light-emitting diodes by roughening the mesa sidewall

In this letter, we will report on a nitride-based light emitting diode with a mesa sidewall roughening process that increases light output power. The fabricated GaN-based light-emitting diode (LED) wafers were first treated through a photoelectrochemical (PEC) process. The Ga/sub 2/O/sub 3/ layers then formed around the GaN : Si n-type mesa sidewalls and the bottoms mesa etching regions. Selective wet oxidation occurred at the mesa sidewall between the p- and the n-type GaN interface. The light output power of the PEC treated LED was seen to increase by about 82% which was caused by a reduced index reflectance of GaN-Ga/sub 2/O/sub 3/-air layers, by a rough Ga/sub 2/O/sub 3/ surface, by a microroughening of the GaN sidewall surface, and by a selective oxidation step profile of the mesa sidewall that increases the light-extraction efficiency from the mesa sidewall direction. Consequently, this wet PEC treated process is suitable for high powered nitride-based LEDs lighting applications.