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71.
72.
Li Pen Yuan 《Quantum Electronics, IEEE Journal of》1993,29(1):171-174
Two coupled-mode theories based on individual waveguide modes and compound system modes, respectively, are briefly reviewed with proper modification and new comments. The relation between these two theories is built and it is found that one theory is actually an efficient approximation of the other. Also, the reason why the results obtained with the first more accurate than those obtained with the second is found. The constraint on both approaches is shown 相似文献
73.
74.
75.
76.
Li Z.-M. Landheer D. Veilleux M. Conn D.R. Surridge R. Xu J.M. McDonald R.I. 《Photonics Technology Letters, IEEE》1992,4(5):473-476
The authors have developed a 2-D device simulator for heterostructure metal-semiconductor-metal (MSM) photodetectors. They have incorporated a model of multilayer optics into the simulator and used it to analyze the temporal response of a resonant-cavity enhanced heterostructure with a confining buffer layer and a distributed Bragg reflector (DBR). The authors show that through fine tuning the layer thicknesses, optical resonance enhancement of the light absorption can be obtained 相似文献
77.
78.
Yu. Medvedevskikh A. Bratus G. Hafiychuk A. Zaichenko A. Kytsya A. Turovski G. Zaikov 《应用聚合物科学杂志》2002,86(14):3556-3569
The kinetics of glycidyl methacrylate block polymerization to high conversion was experimentally investigated with variations of the photoinitiator concentration, temperature, and power of UV illumination. The kinetic curves of this polymerization process contain three characterized sections of coordinates of “conversion–time,” namely: The first one is practically linear to a conversion of ≈0.5, the second represents, by itself, the autoacceleration process, and the third presents the autodecelation process. An additional peculiarity of such a polymerization process is poor reproduction of the kinetic measurements. This reproduction does not correspond to instrumental error. Derivation of a kinetic model for block linear polymerization was done. This model is, quantitatively, in good agreement with all the data of the experimental material. © 2002 Wiley Periodicals, Inc. J Appl Polym Sci 86: 3556–3569, 2002 相似文献
79.
Cheol-Min Park Byung-Hyuk Min Jae-Hong Jun Juhn-Suk Yoo Min-Koo Han 《Electron Device Letters, IEEE》1997,18(1):16-18
We have fabricated a self-aligned offset-gated poly-Si thin film transistor (TFT) by employing a novel photoresist reflow process. The gate structure of the new device is consisted of two unique patterns: A main-gate and a sub-gate. The new fabrication method extends the gate-oxide over the offset region. With the assistance of the sub-gate and reflowed photoresist a self-aligned offset region is successfully obtained due to the offset oxide acting as an implantation mask. The poly-Si TFT with symmetrical offsets is easily fabricated and the new method does not require any additional offset mask step. Compared with the misaligned offset gated poly-Si TFTs, excellent symmetric electrical characteristics are obtained 相似文献
80.
V. I. Timoshenko Yu. V. Knyshenko Yu. G. Lyashenko 《Journal of Engineering Physics and Thermophysics》1997,70(3):394-398
The effect of turbulizing asperities positioned on one of the walls of a plane channel on the intensity of exchange processes
near a smooth wall with injection of different working media is studied experimentally.
Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 70, No. 3, pp. 404–408, 1997. 相似文献