一种简单的S参数去嵌入技术

介绍了在低成本夹具上，任意微带结构二端口网络S参数去嵌入的方法；该方法用于获取放大器模块的S参数，根据这些参数设计的C波段的放大器实测结果与仿真一致。     

Ti／RuO2＋SnO2＋Sb2O3｜Pb3O4阳极的性能研究

本文对Ｔｉ│ＲｕＯ２＋ＳｎＯ２＋Ｓｂ２Ｏ３│Ｐｂ３Ｏ４阳极进行了ＳＥＭ、ＥＤＳ、ＸＲＤ研究，考察了在ＩＭＨ２ＳＯ４中电极寿命，测定了该电极的电化学动力学参数ａ、ｂ、ｉ０，并用双位垒模型讨论了其电化学性能，结果表明该电极具有优良的电化学性能和较长的使用寿命。     

Orientation-based unique representation for planar curves and shapes

This paper presents an orientation-based representation for planar curves and shapes. The new representation can uniquely represent all types, of planar shapes, be it convex, nonconvex, polygonal, smoothly curved, or piecewise smooth shapes. It is based on a new parameterization, theabsolute integral orientation. This representation is invariant under translation and rotation. The absolute integral orientation is a parameter invariant under scaling. As a result, matching of similar shapes (i.e., determination of the relative orientation and the scaling factor) using the absolute integral orientation as the parameter is easier than using the arclength as the parameter. In addition, the new representation has the feature of adaptive sampling, making it more compact and efficient than arc-length-based representations.     

含钡合金在钢液中的脱氧行为研究

在MoSi2炉上采用MgO质坩蜗对钢管进行了含钡合金脱氧行为的研究。实验中钡系合金主要选取SiAUBa、SiCaBa、SiAlBaCa、SiAlBeCaSr及用于钙处理的SiCa包芯线，选用Al作为对比脱氧剂，考察了钡系合金脱氧的全氧含量，脱氧产物的分布、尺寸和形貌，探讨了钡系合金脱氧和对夹杂物变性作用的机理。     

论高层建筑中央空调水系统水压试验的步骤

通过对中央空调水系统安装的特点分析,确定了应用效果良好的试压步骤。     

随机模拟在电信网性能评价中的应用

本文介绍了可在微机上实现大规模电信网践模拟的实用化软件ＳＩＭＵＮＥＴ，及基所采用的无时钟事件追踪法。该软件可用规划中的电信网络和实际网路的模拟及性能评价，也可用于不同流量控制算法的评价。文中给出一个评价实例。     

雾化水流计算模式

本文描述了雾化水流现象并提出了雾化水流的一个计算模型。得出了雾化水流影响领域的各种不同的计算公式和方法。     

反井钻及其在我国水电工程的应用

本文介绍了反井钻这一新型的竖井和斜井开挖施工设备，以及该设备在国内水电工程中的应用。实践证明，在适当的地质地形条件下，反井钻比人工正井法、吊罐、阿里马克爬罐法都具有明显的优越性，值得在国内其它水电工程中推广应用。     

防晃水箱控制高层建筑地震反应的理论研究

防晃水箱是在一般水箱内安置环形防晃板，在高层建筑顶部设置这种水箱可以对建筑物的地震反应作被动控制。本文对这一系统进行了数值模拟，考虑了水箱和结构间的相互耦合作用，研究了水箱对建筑物地震反应的影响，数值分析为合理设计水箱提供了理论依据。     

A novel technique for profiling the lateral n- dopingconcentrations of submicron LDD MOS devices

This paper reports a simple I-V method for the first time to determine the lateral lightly-doped source/drain (S/D) profiles (n^- region) of LDD n-MOSFETs. One interesting result is the direct observation of the reverse-short-channel effect (RSCE). It is observed that S/D n^- doping profile is channel length dependent if reverse short-channel effect exists as a result of the interstitial imperfections caused by Oxide Enhanced Diffusion (OED) or S/D implant. Not only the lateral profiles for long-channel devices but also for short-channel devices can be determined. One other practical application of the present method for device drain engineering has been demonstrated with a LATID MOS device drain engineering work. It is convincible that the proposed method is well suited for the characterization and optimization of submicron and deep-submicron MOSFETs in the current ULSI technology