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131.
Edward Mutafungwa Liang Yong 《Journal of Infrared, Millimeter and Terahertz Waves》2004,25(2):365-381
Indoor infrared communication systems is one of the possible ways of offering data rates in excess of 100 Mbit/s without the need for wiring. Multiple users can share an infrared channel by code division-multiple access (CDMA) techniques. However, the CDMA system performance is limited by both background noise and co-channel interference. In this paper we study the use of angle diversity for mitigating the effects of the noise and interference. The system considered uses on-off shift keying modulation with multibeam transmitters and imaging receivers. The overall system performance for different diversity combining techniques is evaluated and compared to a system without diversity. Numerical results for a 2-user CDMA system indicate that signal to noise and interference ratio (SNIR) improvement (over systems with no diversity) of 5 dB is obtained for at least 50% of an ensemble of 10000 sample evaluations. The generalized selection combining (GSC)--a new diversity technique yet to be implemented for infrared systems--offers the best performance even with its reduced complexity. 相似文献
132.
133.
试论循环水装置的经济性及其成本分析 总被引:2,自引:1,他引:1
通过对循环水装置的投资和成本分析,阐述了建设该装置的经济性和社会意义。 相似文献
134.
Yang C.W. Fang Y.K. Lin C.S. Tsair Y.S. Chen S.M. Wang W.D. Wang M.F. Cheng J.Y. Chen C.H. Yao L.G. Chen S.C. Liang M.S. 《Electronics letters》2003,39(21):1499-1501
A novel technique to form high-K dielectric of HfSiON by doping base oxide with Hf and nitridation with NH/sub 3/, sequentially, is proposed. The HfSiON gate dielectric demonstrates excellent device performances such as only 10% degradation of saturation drain current and almost 45 times of magnitude reduction in gate leakage compared with conventional SiO/sub 2/ gate at the approximately same equivalent oxide thickness. Additionally, negligible flatband voltage shift is achieved with this technique. Time-dependent dielectric breakdown tests indicate that the lifetime of HfSiON is longer than 10 years at V/sub dd/=2 V. 相似文献
135.
Ramanujam J. Jinpyo Hong Kandemir M. Narayan A. Agarwal A. 《Signal Processing, IEEE Transactions on》2006,54(1):286-294
Most embedded systems have limited amount of memory. In contrast, the memory requirements of the digital signal processing (DSP) and video processing codes (in nested loops, in particular) running on embedded systems is significant. This paper addresses the problem of estimating and reducing the amount of memory needed for transfers of data in embedded systems. First, the problem of estimating the region associated with a statement or the set of elements referenced by a statement during the execution of nested loops is analyzed. For a fixed execution ordering, a quantitative analysis of the number of elements referenced is presented; exact expressions for uniformly generated references and a close upper and lower bound for nonuniformly generated references are derived. Second, in addition to presenting an algorithm that computes the total memory required, this paper also discusses the effect of transformations (that change the execution ordering) on the lifetimes of array variables, i.e., the time between the first and last accesses to a given array location. The term maximum window size is introduced, and quantitative expressions are derived to compute the maximum window size. A detailed analysis of the effect of unimodular transformations on data locality, including the calculation of the maximum window size, is presented. 相似文献
136.
合成了掺杂不同Cr含量的Cr-MCM-41分子筛,采用XRD、FT-IR等手段对催化剂进行了表征,并考察了它们对正己醇催化氧化性能的影响.结果表明,掺杂适量的Cr,可使正己醇的转化率达到48%,正己酸的选择性达到83%.Cr的掺杂量、反应温度、催化剂用量等条件对该催化反应均有一定影响.适量杂原子的掺杂不会破坏MCM-41分子筛的结构. 相似文献
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140.
Dong-Soo Yoon Jae Sung Roh Sung-Man Lee Hong Koo Baik 《Journal of Electronic Materials》2003,32(8):890-898
The effect of a thin RuOx layer formed on the Ru/TiN/doped poly-Si/Si stack structure was compared with that on the RuOx/TiN/doped poly-Si/Si stack structure over the post-deposition annealing temperature ranges of 450–600°C. The Ru/TiN/poly-Si/Si
contact system exhibited linear behavior at forward bias with a small increase in the total resistance up to 600°C. The RuOx/TiN/poly-Si/Si contact system exhibited nonlinear characteristics under forward bias at 450°C, which is attributed to no
formation of a thin RuOx layer at the RuOx surface and porous-amorphous microstructure. In the former case, the addition of oxygen at the surface layer of the Ru film
by pre-annealing leads to the formation of a thin RuOx layer and chemically strong Ru-O bonds. This results from the retardation of oxygen diffusion caused by the discontinuity
of diffusion paths. In particular, the RuOx layer in a nonstoichiometric state is changed to the RuO2-crystalline phase in a stoichiometric state after post-deposition annealing; this phase can act as an oxygen-capture layer.
Therefore, it appears that the electrical properties of the Ru/TiN/poly-Si/Si contact system are better than those of the
RuOx/TiN/poly-Si/Si contact system. 相似文献