A Multiband Inductor-Reuse CMOS Low-Noise Amplifier

This paper presents the design and implementation of a new multiband, multistandard CMOS low-noise amplifier (LNA) that reuses inductors for different frequency bands to minimize chip area. The idea is to adaptively reconfigure a CMOS transistor in either common source or common gate configuration to achieve narrow-band (NB) or wide-band (WB) input matching, respectively, while conveniently reusing input and load inductors for both bands. This architecture is suitable for 802.11 a/b/g and Public Safety Broadband (PSB) applications, where the NB configuration covers wireless local area network (WLAN) 802.11 b/g, while the WB configuration accommodates the PSB at 4.9 GHz and WLAN 802.11 a. Two versions of the proposed idea, a tapped-capacitor and a tapped-inductor input-matched LNA, have each been designed and fabricated in 0.13-mum CMOS and measurement results are demonstrated.     

一种通过改变激光功率密度分布控制熔覆层裂纹的方法

为了降低激光熔覆过程中熔覆层热应力从而减少裂纹的生成,提出了一种通过改变激光功率密度分布来控制熔覆层裂纹的方法,并用数值模拟的方法对均布及凸字形光斑熔覆过程进行了热力耦合有限元分析。结果表明,用均布光斑熔覆呈现出激光加工典型的快速加热、快速冷却特征,而采用凸字形光斑可在一定程度上起到预热、缓冷的效果,从而降低了熔覆区与非熔覆区的温度梯度,另外,在熔覆效果相当的前提下,其熔覆层热应力也较小,因而可以有效地减小熔覆层的开裂趋势。     

Integrating IPsec within OpenFlow Architecture for Secure Group Communication

Network securityprotocolssuch as IPsechave been used for many years to ensure robust end-to-end communication and are impor-tant in the context of SDN.Despite the widespread installation of IPsec to date,per-packet protection offered by the protocol isnot very compatible with OpenFlow and flow-like behavior.OpenFlow architecture cannot aggregate IPsec-ESP flows in transportmode or tunnel mode because layer-3 information is encrypted and therefore unreadable.In this paper,we propose using the Secu-rity Parameter Index(SPI)of IPsec within the OpenFlow architecture to identify and direct IPsec flows.Thisenables IPsec to con-form to the packet-based behavior of OpenFlow architecture.In addition,by distinguishing between IPsec flows,the architectureis particularly suited to secure group communication.     

Ground bounce in digital VLSI circuits

This paper is concerned with the analysis and optimization of the ground bounce in digital CMOS circuits. First, an analytical method for calculating the ground bounce is presented. The proposed method relies on accurate models of the short-channel MOS device and the chip-package interface parasitics. Next the effect of ground bounce on the propagation delay and the optimum tapering factor of a multistage buffer is discussed and a mathematical relationship for total propagation delay in the presence of the ground bounce is obtained. Effect of an on-chip decoupling capacitor on the ground bounce waveform and circuit speed is analyzed next and a closed form expression for the peak value of the differential-mode component of the ground bounce in terms of the on-chip decoupling capacitor is provided. Finally, a design methodology for controlling the switching times of the output drivers to minimize the ground bounce is presented.     

材料结构与制备工艺对陶瓷涂层抗冲蚀性能的影响

以常规和纳米团聚体Al2O3-13%TiO2(质量分数)陶瓷粉末为原料,采用等离子喷涂和等离子喷涂-激光重熔复合工艺在TiAl合金表面制备了常规和纳米结构陶瓷涂层,分析了粉末结构及制备工艺对涂层抗冲蚀性能的影响,并探讨了各种涂层的冲蚀破坏机理.结果表明:相对于等离子喷涂试样,激光重熔涂层有较好的抗冲蚀性能.在同等条件下,纳米结构涂层的抗冲蚀性能优于常规涂层.常规陶瓷涂层表现为典型的脆性冲蚀特性,纳米结构陶瓷涂层呈明显的脆性冲蚀特性,同时有一定程度的塑性冲蚀特征.等离子喷涂层的冲蚀磨损以片层状脱落为主,同时有一定程度的脆性陶瓷颗粒破碎;而激光重熔试样以近表面的裂纹萌生和扩展,最终导致重熔层晶粒破碎、剥离为主.     

Abnormal Graphitization Behavior in Near-Surface/Interface Region of Polymer-Derived Ceramics

The in situ free carbon generated in polymer-derived ceramics (PDCs) plays a crucial role in their unique microstructure and resultant properties. This study advances a new phenomenon of graphitization of PDCs. Specifically, whether in micro-/nanoscale films or millimeter-scale bulks, the surface/interface radically changes the fate of carbon and the evolution of PDC nanodomains, promotes the graphitization of carbon, and evolves a free carbon enriched layer in the near-surface/interface region. Affected by the enrichment behavior of free carbon in the near-surface/interface region, PDCs exhibit highly abnormal properties such as the skin behavior and edge effect of the current. The current intensity in the near-surface/interface region of PDCs is orders of magnitude higher than that in its interior. Ultrahigh conductivity of up to 14.47 S cm⁻¹ is obtained under the action of the interface and surface, which is 5–8 orders of magnitude higher than that of the bulk prepared under the same conditions. Such surface/interface interactions are of interest for the regulation of free carbon and its resultant properties, which are the core of PDC applications. Finally, the first PDC thin-film strain gauge that can survive a butane flame with a high temperature of up to ≈1300 °C is fabricated.     

机械活化处理对绿豆淀粉理化性质的影响

为探究球磨机械活化处理对绿豆淀粉理化性质的影响,对机械活化后绿豆淀粉的颗粒形貌和粒度分布进行观察,并进一步对其热力学性质、糊化性质、溶解度、膨胀度、持水能力和冻融稳定性等理化性质进行测定。结果表明,淀粉颗粒形貌发生了改变,表面变得粗糙不光滑,形状不规则,淀粉颗粒粒度分布范围为2～200 μm,70%以上分布在20～75 μm区间,粒度中位径增大到43.09 μm,热焓值降低至2.32 J/g,糊化温度显著降低,衰减值及回生值分别为原淀粉的1/30和1/31,微细化绿豆淀粉具有较好的热糊和冷糊稳定性,溶解度和膨胀度随着温度的升高而增大,持水能力和冻融稳定性为原淀粉的3.2倍和2.0倍。     

激光重熔对等离子喷涂热障涂层冲蚀行为影响

研究了等离子喷涂和激光重熔ZrO<,2>-7%Y<,2>O<,3>热障涂层的微观结构,同时考察了两种涂层的抗冲蚀性能,并探讨了其冲蚀破坏机理.试验发现,等离子喷涂热障陶瓷涂层呈典型的层状堆积特征;经过激光重熔处理后,涂层表面形成了沿热流方向生长的柱状品重熔区;相对于等离子喷涂试样,激光重熔涂层有较好的抗冲蚀性能;不管等...