A new iterative order reduction (IOR) method for eigensolutions of large structures

Order reduction is a computationally efficient method to estimate some lowest eigenvalues and the corresponding eigenvectors of large structural systems by reducing the order of the original model to a smaller one. But its accuracy is limited to a small range of frequencies that depends on the selection of the retained degrees of freedom. This paper proposes a new iterative order reduction (IOR) technique to obtain accurately the eigensolutions of large structural systems. The technique retains all the inertia terms associated with the removed degrees of freedom. This hence leads to the reduced mass matrix being in an iterated form and the reduced stiffness matrix constant. From these mass and stiffness matrices, the eigensolutions of the reduced system can be obtained iteratively. On convergence the reduced system reproduces the eigensolutions of the original structure. A proof of the convergence property is also presented. Applications of the method to a practical GARTEUR structure as well as a plate have demonstrated that the proposed method is comparable to the commonly used Subspace Iteration method in terms of numerical accuracy. Moreover, it has been found that the proposed method is computationally more efficient than the Subspace Iteration method. Copyright © 2003 John Wiley & Sons, Ltd.     

Thermodynamic properties and defect structure of semiconducting compound phases: Tin telluride

Defect equilibria for binary semiconducting compound phases which exhibit ionized native donor and acceptor defects were considered, and equations describing the pressure-temperature-composition relationships for these compound phases were derived. These equations were used to analyze experimental data from the literature for tin telluride. Excellent agreement was obtained between calculated thermodynamic and phase boundary values and experimental data. The approach presented is readily extended to obtain equations for the thermodynamic properties of ternary and higher order semiconducting compound phases.     

Silicon-to-steel bonding using rapid thermal annealing

This paper presents the rapid, low-temperature bonding between silicon and steel using the rapid thermal annealing process. Three different thin-film adhesion layer systems including silver, gold, and nickel were utilized as the intermediate bonding material to assist the eutectic Pb/Sn bonding between silicon and steel. The bonding temperature was set at 220/spl deg/C for 20 s, with a 20-s ramp-up time. Five experiments were conducted to determine the strength of the bond, including static tensile and compressive four-point bend tests, axial extension tests, tensile bending fatigue tests, and corrosion resistance tests. The test results have shown that the gold adhesion layer is the most robust, demonstrating minimal creep during fatigue tests, no delamination during the tensile or compressive four-point bend tests, and acceptable strength during the axial extension tests. Additionally, all adhesion layers have withstood four months of submersion in various high-temperature solutions and lubricants without failure. Simulations of the axial stresses and strains that developed during the four-point bend and axial extension tests were performed and showed that the presence of the silicon die provides a local reinforcement of the bond as observed in the experimental tests.     

Enhanced light output in nitride-based light-emitting diodes by roughening the mesa sidewall

In this letter, we will report on a nitride-based light emitting diode with a mesa sidewall roughening process that increases light output power. The fabricated GaN-based light-emitting diode (LED) wafers were first treated through a photoelectrochemical (PEC) process. The Ga/sub 2/O/sub 3/ layers then formed around the GaN : Si n-type mesa sidewalls and the bottoms mesa etching regions. Selective wet oxidation occurred at the mesa sidewall between the p- and the n-type GaN interface. The light output power of the PEC treated LED was seen to increase by about 82% which was caused by a reduced index reflectance of GaN-Ga/sub 2/O/sub 3/-air layers, by a rough Ga/sub 2/O/sub 3/ surface, by a microroughening of the GaN sidewall surface, and by a selective oxidation step profile of the mesa sidewall that increases the light-extraction efficiency from the mesa sidewall direction. Consequently, this wet PEC treated process is suitable for high powered nitride-based LEDs lighting applications.     

内网安全新时空--宝信网络巡警eCop典型案例分析

内网安全的重要性网络的发展给工作带来巨大便利的同时也带来了众多安全隐患,有关网络信息安全的问题日益突出。目前绝大多数的企业、学校、政府机构把安全重点放在防范来自外部的攻击,依赖于防火墙、防病毒、入侵检测等软件。尽管在所有介绍系统安全的文献中都会提及来自于内部的安全威胁,却鲜有针对内部安全隐患的防范工具与手段。2003年美国CSI/FBI提供的《计算机犯罪与安全调查报告》显示,80%以上的信息安全事件为内部人员和内外勾结所为。尤其近几年来,随着个人技术水平的提高,IP地址非法占用和盗用、非法外联现象、计算机基本信息…     

Reliability evaluation of class-E and class-a power amplifiers with nanoscaled CMOS technology

Circuit reliability of class-E and class-A power amplifiers is investigated based on a newly developed degradation subcircuit model. Measured degradation characteristics on the fabricated circuits agree well with the simulation predictions. Using this model, we have found that the class-E amplifier degrades faster than a class-A amplifier, due to a much higher stress level during switching. With a drastic decrease of PAE, a shorter lifetime is expected for a class-E amplifier.     

Design Techniques of CMOS Ultra-Wide-Band Amplifiers for Multistandard Communications

This paper presents design techniques of CMOS ultra-wide-band (UWB) amplifiers for multistandard communications. The goal of this paper is to propose a compact, simple, and robust topology for UWB low-noise amplifiers, which yet consumes a relatively low power. To achieve this goal, a common-gate amplifier topology with a local feedback is employed. The first amplifier uses a simple inductive peaking technique for bandwidth extension, while the second design utilizes a two-stage approach with an added gain control feature. Both amplifiers achieve a flat bandwidth of more than 6 GHz and a gain of higher than 10 dB with supply voltages of 1.8-2.5 V. Designs with different metal thicknesses are compared. The advantage of using thick-metal inductors in UWB applications depends on the chosen topology.     

Ionothermal synthesis of a three-dimensional zinc phosphate with DFT topology using unstable deep-eutectic solvent as template-delivery agent

A three-dimensional zinc phosphate compound with DFT topology, designated as ZnPO₄-EU1, has been synthesized by an ionothermal approach from the system HF-ZnO–P₂O₅-choline chloride-imidazolidone. Ethylenediamine, derived from decomposition of the imidazolidone component of the deep-eutectic solvent (DES) itself, is delivered to the synthesis and serves as an appropriate template for ZnPO₄-EU1. Experiments in which the synthesis conditions were varied showed that ZnPO₄-EU1 may be prepared over a wide molar ratio of P/Zn = 0.55–13.0. Powder X-ray diffraction patterns have been obtained at intervals to track the crystallization process of this material. The experimental data show that Zn₃(PO₄)₂ · 4H₂O (a dense phase) was first isolated from the DES after reaction for 1 h. Subsequently, the pure phase of ZnPO₄-EU1 was obtained with increasing crystallization time from 12 h to 72 h. The experimental results show that the nucleation and crystallization take place with relatively low levels of solvent degradation, demonstrating that zinc phosphate with a three-dimensional framework can be synthesized by in situ generation of an appropriate template using an unstable DES at high temperatures (150–200 °C).     

熟悉而又陌生

《Frame》总第46期向读者展示了许多有意思的想法和创意的细节下面是从中摘选出来的设计和空间方案他们都运用到了我们身边很熟悉的元素，在这里“腐朽”一下化神奇了。[编者按]