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101.
Yang C.W. Fang Y.K. Lin C.S. Tsair Y.S. Chen S.M. Wang W.D. Wang M.F. Cheng J.Y. Chen C.H. Yao L.G. Chen S.C. Liang M.S. 《Electronics letters》2003,39(21):1499-1501
A novel technique to form high-K dielectric of HfSiON by doping base oxide with Hf and nitridation with NH/sub 3/, sequentially, is proposed. The HfSiON gate dielectric demonstrates excellent device performances such as only 10% degradation of saturation drain current and almost 45 times of magnitude reduction in gate leakage compared with conventional SiO/sub 2/ gate at the approximately same equivalent oxide thickness. Additionally, negligible flatband voltage shift is achieved with this technique. Time-dependent dielectric breakdown tests indicate that the lifetime of HfSiON is longer than 10 years at V/sub dd/=2 V. 相似文献
102.
Chou Y.C. Leung D. Lai R. Grundbacher R. Barsky M. Kan Q. Tsai R. Wojtowicz M. Eng D. Tran L. Block T. Liu P.H. Nishimoto M. Oki A. 《Electron Device Letters, IEEE》2003,24(6):378-380
The authors have investigated the reliability performance of G-band (183 GHz) monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.07-/spl mu/m T-gate InGaAs-InAlAs-InP HEMTs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel on 3-in wafers. Life test was performed at two temperatures (T/sub 1/ = 200 /spl deg/C and T/sub 2/ = 215 /spl deg/C), and the amplifiers were stressed at V/sub ds/ of 1 V and I/sub ds/ of 250 mA/mm in a N/sub 2/ ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) /spl ap/ 2 /spl times/ 10/sup 6/ h at a junction temperature of 125 /spl deg/C. MTTF was determined by 2-temperature constant current stress using /spl Delta/G/sub mp/ = -20% as the failure criteria. The difference of reliability performance between 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel and 0.1-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with In/sub 0.6/Ga/sub 0.4/As channel is also discussed. The achieved high-reliability result demonstrates a robust 0.07-/spl mu/m pseudomorphic InGaAs-InAlAs-InP HEMT MMICs production technology for G-band applications. 相似文献
103.
Y.K. Su H.C. Wang C.L. Lin W.B. Chen S.M. Chen 《Photonics Technology Letters, IEEE》2003,15(10):1345-1347
The brightness of AlGaInP light emitting diodes (LEDs) has been raised by a factor of 1.12 at 20 mA by sulfide passivation. Meanwhile, the sulfide also can decrease leakage current of AlGaInP LEDs at -2 V to nearly one thousandth of that in the as-fabricated device. The possible causes for the brightness increase of AlGaInP LEDs after sulfide treatment including surface roughness, reduction of Fresnel loss, and effective injection of carriers were demonstrated. 相似文献
104.
We have analyzed degradation of N-channel thin-film-transistor (TFT) under dynamic stress using a pico-second time-resolved emission microscope. We have successfully detected emission at pulse fall edge for the first time. Emission intensity increased with the decrease of pulse fall time. As the degradation depended on the pulse fall time, this dependence clearly illustrates that hot electrons are the dominant cause of the degradation under dynamic stress. Based on these dependences, we proposed a model considering electron traps in the poly-Si. 相似文献
105.
Polycrystalline Cu(In,Ga)Se2 (CIGS) films with various ratios of Cu, In, and Ga were grown by codeposition of all elements in vacuum. The X-ray diffraction
study showed that the films are single-phase and possess a chalcopyrite structure with predominant [112] orientation. The
films exhibited a mirror smooth surface and had a close-packed structure composed of crystallites with clear faceting and
a transverse size of 0.1–0.3 μm. Related surface barrier structures of the (In,Ag)/Cu(In,Ga)Se2 type were obtained and their spectra of the quantum efficiency of photoconversion were studied. The obtained structures can
be used for optimization of the CIGS film technology. 相似文献
106.
A new scheme is introduced for obtaining higher stability performance for the symplectic finite-difference time-domain (FDTD) method. Both the stability limit and the numerical dispersion of the symplectic FDTD are determined by a function zeta. It is shown that when the zeta function is a Chebyshev polynomial the stability limit is linearly proportional to the number of the exponential operators. Thus, the stability limit can be increased as much as possible at the cost of increased number of operators. For example, the stability limit of the four-exponential operator scheme is 0.989 and of the eight-exponential operator scheme it is 1.979 for fourth-order space discretization in three dimensions, which is almost three times the stability limit of previously published symplectic FDTD schemes with a similar number of operators. This study also shows that the numerical dispersion errors for this new scheme are less than those of the previously reported symplectic FDTD schemes 相似文献
107.
Finite element piezothermoelasticity analysis and the active control of FGM plates with integrated piezoelectric sensors and actuators 总被引:3,自引:0,他引:3
An efficient finite element model is presented for the static and dynamic piezothermoelastic analysis and control of FGM
plates under temperature gradient environments using integrated piezoelectric sensor/actuator layers. The properties of an FGM plate are functionally graded in the thickness
direction according to a volume fraction power law distribution. A constant displacement-cum-velocity feedback control algorithm that couples the direct and inverse piezoelectric effects is applied to provide active feedback
control of the integrated FGM plate in a closed loop system. Numerical results for the static and dynamic control are presented
for the FGM plate, which consists of zirconia and aluminum. The effects of the constituent volume fractions and the influence
of feedback control gain on the static and dynamic responses of the FGM plates are examined.
Received: 13 March 2002 / Accepted: 5 March 2003
The work described in this paper was supported by a grant awarded by the Research Grants Council of the Hong Kong Special
Administrative Region, China (Project No. CityU 1024/01E). 相似文献
108.
M. Kawasaki T. Tsukamoto Y. Kimura T. Iwasaki H. Yamane 《Journal of Materials Science》2003,38(4):739-745
The damage imposed on SiO
x
deposited nylon 6 films as a result of abrasion with a cotton cloth and Gelboflex testing was examined by evaluating the rate at which copper plates, which were enveloped by the damaged films, were corroded by H2S. Abrasion with a cotton cloth caused some micro-cracking of the SiO
x
layer and the permeation rate of H2S approached that of the uncoated nylon 6 film. Damage to the SiO
x
layer by twisting and crushing progressed gradually with the number of Gelboflex test cycles and correspondingly the corrosion rate of the copper plates increased. Comparison of the corrosion rates of the copper plates kept in the pouches made of various commercial films with those obtained for the damaged SiO
x
deposited nylon 6 films showed a clear relationship between the H2 permeation rate of the films and the corrosion rate of the copper plates by H2S. 相似文献
109.
110.
新产品研发是建陶企业可持续发展的核心 总被引:2,自引:0,他引:2
新世纪我国建陶企业在整个国民经济的带动下将进一步发展,入世后经济全球化的市场竞争格局,建陶企业只有走新产口研发之路,严格企业管理,才会在日趋激烈的市场竞争中得以生存和可持续发展。 相似文献