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排序方式: 共有3551条查询结果,搜索用时 265 毫秒
51.
S.‐C. Lo G.J. Richards J.P.J. Markham E.B. Namdas S. Sharma P.L. Burn I.D.W. Samuel 《Advanced functional materials》2005,15(9):1451-1458
We describe the preparation of a dendrimer that is solution‐processible and contains 2‐ethylhexyloxy surface groups, biphenyl‐based dendrons, and a fac‐tris[2‐(2,4‐difluorophenyl)pyridyl]iridium(III ) core. The homoleptic complex is highly luminescent and the color of emission is similar to the heteroleptic iridium(III ) complex, bis[2‐(2,4‐difluorophenyl)pyridyl]picolinate iridium(III ) (FIrpic). To avoid the change in emission color that would arise from attaching a conjugated dendron to the ligand, the conjugation between the dendron and the ligand is decoupled by separating them with an ethane linkage. Bilayer devices containing a light‐emitting layer comprised of a 30 wt.‐% blend of the dendrimer in 1,3‐bis(N‐carbazolyl)benzene (mCP) and a 1,3,5‐tris(2‐N‐phenylbenzimidazolyl)benzene electron‐transport layer have external quantum and power efficiencies, respectively, of 10.4 % and 11 lm W–1 at 100 cd m–2 and 6.4 V. These efficiencies are higher than those reported for more complex device structures prepared via evaporation that contain FIrpic blended with mCP as the emitting layer, showing the advantage of using a dendritic structure to control processing and intermolecular interactions. The external quantum efficiency of 10.4 % corresponds to the maximum achievable efficiency based on the photoluminescence quantum yield of the emissive film and the standard out‐coupling of light from the device. 相似文献
52.
Fast clustering process for vector quantisation codebook design 总被引:1,自引:0,他引:1
A fast clustering process is introduced to the generalised Lloyd algorithm for vector quantisation codebook design. Simulations show that the proposed codebook design method achieves significant saving in computational time and similar qualitative performance to that of the conventional full-search approach 相似文献
53.
KL Hsu CH Tsai FT Chiang HM Lo CD Tseng SG Ho YZ Tseng 《Canadian Metallurgical Quarterly》1997,80(12):1635-1637
Percutaneous balloon pericardiotomy is effective and less invasive for the treatment of recurrent pericardial effusion. This study suggests that the double-balloon method with 1 longer and 1 shorter balloon is the procedure of choice for percutaneous balloon pericardiotomy. 相似文献
54.
55.
HM Chaung CH Hong CP Chiang SK Lin YS Kuo WH Lan CC Hsieh 《Canadian Metallurgical Quarterly》1996,95(7):545-550
This review reports the different genetic factors that have been identified either as risk factor for Alzheimer's disease (AD) or directly causing the disease. First are reviewed epidemiological data and biological mechanisms about the apoplipoprotein E gene allele epsilon 4 that is a major risk factor for Alzheimer's disease. The second part describes the mutations responsible for early-onset autosomal dominant AD found in three different genes. The gene located on chromosome 21 encodes the amyloid precusor protein (APP). The presenilin 1 and presenilin 2 genes, located on chromosome 14 and 1 respectively, encode not yet known membrane proteins. 相似文献
56.
Y.-Y. Lin S.-P. Lo 《The International Journal of Advanced Manufacturing Technology》2004,23(9-10):644-650
In this paper, relative velocity at a given point on the wafer was first derived. The revolutions of wafer and pad are assumed the same and the axisymmetric uniformly distributed pressure form is given. Thus, a 2D axisymmetric quasic-static model for chemical-mechanical polishing process (CMP) was established. Based on the principle of minimum total potential energy and axisymmetric elastic stress-strain relations, a 2D axisymmetric quasic-static finite element model for CMP was thus established. In this model, the four-layer structures including wafer carrier, carrier film, wafer and pad are involved. The von Mises stress distributions on the wafer surface were analysed, the effects of axial, hoop, radial and shear stresses to von Mises stress and the effects of axial, hoop, radial and shear strains to deformation of the wafer were investigated. The findings indicate that near the wafer centre, von Mises stress distribution on the wafer surface was almost uniform, then increased gradually with a small amount. However, near the wafer edge, it would decrease in a large range. Finally, it would increase dramatically and peak significantly at the edge. Besides, the axial stress and strain are the dominant factors to the von Mises stress distributions on the wafer surface and the wafer deformation, respectively. 相似文献
57.
YS Jung IR Vassiliev J Yu L McIntosh JH Golbeck 《Canadian Metallurgical Quarterly》1997,272(12):8040-8049
A psaC deletion mutant of the unicellular cyanobacterium Synechocystis sp. PCC 6803 was utilized to incorporate site-specific amino acid substitutions in the cysteine residues that ligate the FA and FB iron-sulfur clusters in Photosystem I (PS I). Cysteines 14 and 51 of PsaC were changed to aspartic acid (C14DPsaC, C51DPsaC, C14D/C51DPsaC), serine (C14SPsaC, C51SPsaC), and alanine (C14APsaC, C51APsaC), and the properties of FA and FB were characterized by electron paramagnetic resonance spectroscopy and time-resolved optical spectroscopy. The C14DPsaC-PS I and C14SPsaC-PS I complexes showed high levels of photoreduction of FA with g values of 2.045, 1. 944, and 1.852 after illumination at 15 K, but there was no evidence of reduced FB in the g = 2 region. The C51DPsaC-PS I and C51SPsaC-PS I complexes showed low levels of photoreduction of FB with g values of 2.067, 1.931, and 1.881 after illumination at 15 K, but there was no evidence of reduced FA in the g = 2 region. The presence of FB was inferred in C14DPsaC-PS I and C14SPsaC-PS I, and the presence of FA was inferred in C51DPsaC-PS I and C51SPsaC-PS I by magnetic interaction in the photoaccumulated spectra and by the equal spin concentration of the irreversible P700(+) cation generated by illumination at 77 K. Flash-induced optical absorbance changes at 298 K in the presence of a fast electron donor indicate that two electron acceptors function after FX in the four mutant PS I complexes at room temperature. These data suggest that a mixed-ligand [4Fe-4S] cluster is present in the mutant sites of C14X-PS I and C51X-PS I (where X = D or S), but that the proposed spin state of S = 3/2 renders the resonances undetectable in the g = 2 region. The C14APsaC-PS I, C51APsaC-PS I and C14D/C51DPsaC-PS I complexes show only the photoreduction of FX, consistent with the absence of PsaC. These results show that only those PsaC proteins that contain two [4Fe-4S] clusters are capable of assembling onto PS I cores in vivo. 相似文献
58.
CMOS scaling into the nanometer regime 总被引:11,自引:0,他引:11
Yuan Taur Buchanan D.A. Wei Chen Frank D.J. Ismail K.E. Shih-Hsien Lo Sai-Halasz G.A. Viswanathan R.G. Wann H.-J.C. Wind S.J. Hon-Sum Wong 《Proceedings of the IEEE. Institute of Electrical and Electronics Engineers》1997,85(4):486-504
Starting with a brief review on 0.1-μm (100 nm) CMOS status, this paper addresses the key challenges in further scaling of CMOS technology into the nanometer (sub-100 nm) regime in light of fundamental physical effects and practical considerations. Among the issues discussed are: lithography, power supply and threshold voltage, short-channel effect, gate oxide, high-field effects, dopant number fluctuations and interconnect delays. The last part of the paper discusses several alternative or unconventional device structures, including silicon-on-insulator (SOI), SiGe MOSFET's, low-temperature CMOS, and double-gate MOSFET's, which may lead to the outermost limits of silicon scaling 相似文献
59.
60.
AC hot-carrier effects in n-MOSFETs with thin (~85 Å) N2O-nitrided gate oxides have been studied and compared with control devices with gate oxides grown in O2. Results show that furnace N2O-nitrided oxide devices exhibit significantly reduced AC-stress-induced degradation. In addition, they show weaker dependences of device degradation on applied gate pulse frequency and pulse width. Results suggest that the improved AC-hot-carrier immunity of the N2O-nitrided oxide device may be due to the significantly suppressed interface state generation and neutral electron trap generation during stressing 相似文献