Nanofabrication with Pulsed Lasers

An overview of pulsed laser-assisted methods for nanofabrication, which are currently developed in our Institute (LP3), is presented. The methods compass a variety of possibilities for material nanostructuring offered by laser–matter interactions and imply either the nanostructuring of the laser-illuminated surface itself, as in cases of direct laser ablation or laser plasma-assisted treatment of semiconductors to form light-absorbing and light-emitting nano-architectures, as well as periodic nanoarrays, or laser-assisted production of nanoclusters and their controlled growth in gaseous or liquid medium to form nanostructured films or colloidal nanoparticles. Nanomaterials synthesized by laser-assisted methods have a variety of unique properties, not reproducible by any other route, and are of importance for photovoltaics, optoelectronics, biological sensing, imaging and therapeutics.     

The use of laser and phototherapy in the comprehensive treatment of malignant tumors and leukemia in children

The report deals with the development of procedures, evaluation of laser application and prevention of complications involved in intensive chemoradiation therapy of neoplasms of hemopoietic and lymphoid tissue in childhood. The clinical data on 548 patients, aged 2 months-15 years, with leukemia and solid tumor were evaluated. Laser application for treatment of different complications of chemoradiation therapy of pediatric leukemia proved a valuable innovation. It had a pronounced antiinflammatory and analgetic effect, promoted tissue regeneration processes and cut down the duration of complication treatment drastically.     

做最好的超低音系统 美国ＪＬ ＡＵＤＩＯ品牌史沿革

我们非常感激你对儿音响产品的关心，并且希望它能成为你家庭音响和家庭影院中的一部分。 当我们进入家庭音响市场的时候，我们公司承诺会以性能和品质的最高标准来创造产品。我们相信你会从Fathom@或者Gofham中的每个细节中看到儿音响对品质的承诺，但最重要的是，我们相信你会在每次欣赏电影和享受音乐的时候都会感受得到。     

Study of sialated neoglycoconjugates by surface enhanced Raman scattering spectroscopy

Neoglycoconjugates based on polyacrylamide and sialic acid with N-acetylneuraminic acid or sialooligosaccharides as side chains were studied by surface-enhanced Raman scattering (SERS) spectroscopy. It had previously been found that these polymers can effectively inhibit influenza virus adhesion. This study revealed the possibility to evaluate, based on the intensity of SERS signals, the overall availability for interaction and the conformational freedom of sialic acid residues in glycoconjugates. The dependence of these two factors on the structure and density of sialylated side chains was studied. The uniformity of distribution of sialylated side chains in conjugates was shown. Comparison of the results of the SERS spectroscopic study of the conjugates and the data on their inhibitory effect on the adhesion of specific strains of influenza virus allowed the identification of the conjugates for which the availability and conformational freedom of sialic acid are the main factors determining their inhibitory properties. A conclusion was also reached about the predominance of one of the mechanisms (competitive inhibition or steric stabilization) in the inhibitory properties of the specific conjugates.     

New solutions for intermetal dielectrics using trimethylsilane-based PECVD processes

Trimethylsilane, (CH₃)₃SiH, is a non-pyrophoric organosilicon gas. This material is easily used to deposit dielectric thin films in standard PECVD systems designed for SiH₄. In addition to deposition of standard dielectrics (e.g. SiO₂), trimethylsilane can be used to deposit reduced permittivity (low-k) dielectric versions of amorphous hydrogenated silicon carbide and its oxides. The low-k carbides (k<5.5) are highly insulating and useful as hard masks, etch stops and copper diffusion barriers. The low-k oxides (2.6<k<3.0) are useful as intermetal dielectrics, and exhibit stability and electrical properties which can meet many specifications in device fabrication that are now placed on SiO₂. This paper reviews PECVD processing using trimethylsilane. Examples will show that the 3MS-based dielectrics can be used in place of SiH₄-based oxides and nitrides in advanced device multilevel metal interconnection schemes to provide improved circuit performance.