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41.
Sha Lu Yong Hu O'Hara M. Bogy D.B. Singh Bhatia C. Yiao-Tee Hsia 《IEEE transactions on magnetics》1996,32(1):103-109
Three sub-25 nm fly height sliders are presented for near contact recording. The designs are geared towards the goal of achieving 10 Gb/in 2 areal density. The optimization procedure presented shows promise for facilitating achievement of this goal. The dynamic simulations show the stability of these designs when disturbed from their steady state conditions 相似文献
42.
Five-terminal silicon-on-insulator (SOI) MOSFETs have been characterized to determine the threshold voltage at the front, back, and sidewall as a function of the body bias. The threshold voltage shift with the body bias at the front and back interfaces can be explained by the standard bulk body effect equation. However, the threshold voltage shift at the sidewall is smaller than predicted by this equation and saturates at large body biases. This anomalous behavior is explained by two-dimensional charge sharing between the sidewall and the front and back interfaces. An analytical model that accounts for this charge sharing by a simple trapezoidal approximation of the depletion regions and correctly predicts the sidewall threshold voltage shift and its saturation is discussed. The model makes it possible to measure the sidewall threshold even when it is larger than the front threshold voltage 相似文献
43.
44.
Jing Wang Walker D.M. Xiang Lu Majhi A. Kruseman B. Gronthoud G. Villagra L.E. van de Wiel P.J.A. Eichenberger S. 《Design & Test of Computers, IEEE》2007,24(3):226-234
Excessive power supply noise during test can cause overkill. This article discusses two models for supply noise in delay testing and their application to test compaction. The proposed noise models avoid complicated power network analysis, making them much faster than existing power noise analysis tools. can cause performance degradation and 相似文献
45.
With the aim to reduce disorder and improve efficiency, nodes in an ad hoc network run a self-organization scheme to cooperatively organize the network. Although metrics such as complexity or self-stability are commonly used for evaluation, to the best of our knowledge, none of them quantifies the efficiency to build and maintain an organization (order). We henceforth apply the notion of entropy to ad hoc type wireless networks facilitating a quantification of the internal organizational state generated by different self-organization schemes. Invoking node and link failure probabilities, we expose the dependency of the organizational state on the self-organization protocol of choice. 相似文献
46.
研究了元素含量变化对8011铝合金防盗盖板综合性能的影响,在8011合金中改变Cu、Mn元素含量后可提高防盗盖板的强度,同时研究了烘烤处理后的强度变化问题。本文研究出了8011铝合金防盗盖板新的生产工艺制度。 相似文献
47.
48.
Y. Lu 《Journal of Materials Science》2003,38(5):1081-1085
A Golden Section approach combined with relational grade analysis is proposed as an experimental design tool helpful in the development of new automotive friction materials. Golden Section was used to design the volume fraction of the components systematically. The changes in friction performance (friction coefficient and wear) measured using Friction Assessment and Screening Test (FAST) can be correlated with component variations by use of relational grade analysis. This approach was utilized to optimize a non-metallic friction material containing seven ingredients including two fibers (aramid and slag fiber), four fillers (Al2O3, BaSO4, graphite and nitrile rubber) and one binder (benzoxazine). The volume fraction of seven components was varied simultaneously in order to optimize the parameters of friction coefficient and wear with a minimum number of tests. Three phases were performed to find the optimal proportion of the components. The optimized friction performance was obtained after doing 19 formulation experiments. 相似文献
49.
A jet-printed digital-lithographic method, in place of conventional photolithography, was used to fabricate 64 /spl times/ 64 pixel (300 /spl mu/m pitch) matrix addressing thin-film transistor (TFT) arrays. The average hydrogenated amorphous silicon TFT device within an array had a threshold voltage of /spl sim/3.5 V, carrier mobility of 0.7 cm/sup 2//V/spl middot/s, subthreshold slope of 0.76 V/decade, and an on/off ratio of 10/sup 8/. 相似文献
50.
4G mobile communications: toward open wireless architecture 总被引:2,自引:0,他引:2