Acoustical tomography based on the second-order Born transformperturbation approximation

Reconstruction algorithms and their numerical examples of acoustical tomography based on the second-order Born transform perturbation approximation are presented. The reconstruction algorithms in the second-order Born approximation are similar in form to those in the first-order Born approximation. Replacing the angular spectrum of the scattered wave in the first-order case by the result of applying a first-order operator to the angular spectrum of the scattered wave or applying a second-order operator to the angular spectrum of the incident wave leads to the second-order reconstruction algorithms. Also, comparisons of reconstruction algorithms of the first- and second-order Born approximations are given, and they show that the second-order Born approximation algorithms have a distinct advantage over the first-order approximations in many cases     

川东地区长兴组缝洞型储层的识别

本文针对四川东部地区上二叠统长兴组(P_2~2)缝洞型储层的低孔、低渗及非均质性等特点,分析了影响这类储层识别的主要因素,提出了利用现有的地球物理测井手段定性识别储层的指标和定量综合识别储层的方法,这可望提高测试成功率。     

A three-dimensional non-epitaxial atomistic growth model for thin-film deposition: effect of surface mobility

The effect of the atomic mobility on a film surface has been studied by using a three-dimensional atomistic thin-film deposition model which simulates three-dimensional thin-film images, surface profiles and cross-sectional area pictures. In addition, quantitative results of surface RMS roughness, average film thickness, atomic coordination number and its distribution, and solid fraction of the deposited thin films, were obtained from the simulations. When the film surface mobility increased from 0.3 to 3.0, RMS roughness decreased from 6.5 to 1.1, solid fraction increased from 0.27 to 0.56 and average film thickness decreased from 40 to 28, due to the reduction of the voids within the film. The full-width half magnitude of the atomic coordination distribution became narrower indicating the increased degree of crystallization. With increase in surface mobility crossing the boundary to 1.5, the film evolved from a porous or loose columnar structure with voids, to a densely packed fibrous grain structure which can be categorized by the zone structure models.     

COIL中BHP浓度对发生O_2(~1△)的影响

本文实验研究了BHP的浓度对产生O2（1△）的影响。实验结果表明：当BHP浓度大于3.5M时，Cl2利用率以及O2（1△）的产率将不依赖于BHP浓度的变化而变化，同时，实验结果表明，使用低浓度的BHP对COIL的操作是可行的。     

我的家

我生于东京的银座,那是个靠近传统花街柳巷、歌舞升平的地方,在童年的记忆里那里随时随地都是一片华美景象。而在这些景象的背后有一排排美丽的临街二层长屋建筑,大都是料亭,还有颇有风致的砖结构剧场。那时父母在这里经营着咖啡馆,街上的行人总是把店里挤得满满的。数年前父亲     

石家庄市室内氡及其子体浓度

本文报道了用双滤膜法对石家庄市室内空气中氡及其子体浓度的调查结果。47个房间室内氡年平均浓度为17.0Bq·m~(-3),氡子体平均浓度是7.14Bq·m~(-3)。氡及其子体浓度的日变化是清晨4—8时出现峰值。季节变化是夏秋季低,冬季高,全年的最低值出现在8月,最高值出现在11月。     

A wavelet-based procedure for process fault detection

To detect faults in a time-dependent process, we apply a discrete wavelet transform (DWT) to several independently replicated data sets generated by that process. The DWT can capture irregular data patterns such as sharp "jumps" better than the Fourier transform and standard statistical procedures without adding much computational complexity. Our wavelet coefficient selection method effectively balances model parsimony against data reconstruction error. The few selected wavelet coefficients serve as the "reduced-size" data set to facilitate an efficient decision-making method in situations with potentially large-volume data sets. We develop a general procedure to detect process faults based on differences between the reduced-size data sets obtained from the nominal (in-control) process and from a new instance of the target process that must be tested for an out-of-control condition. The distribution of the test statistic is constructed first using normal distribution theory and then with a new resampling procedure called "reversed jackknifing" that does not require any restrictive distributional assumptions. A Monte Carlo study demonstrates the effectiveness of these procedures. Our methods successfully detect process faults for quadrupole mass spectrometry samples collected from a rapid thermal chemical vapor deposition process