机动天基平台惯性/天文导航组合模式研究

为了有效提高惯性/天文组合定姿效果,研究了在机动天基平台条件下惯性/天文导航的7种组合模式在姿态控制方面的应用,进行了理论分析,并对不同的组合模式的定姿结果进行了仿真实验。通过仿真分析了惯性/天文各种组合模式的优缺点,提出了不同组合模式的适用场合,当星敏感器识别恒星为两颗时,采用基于光轴指向的组合模式的效果好于使用星光单位矢量的组合模式;当星敏感器识别恒星超过两颗时,采用基于姿态矩阵的惯性/天文组合模式效果最好,能够更充分地利用星光信息、计算精度高、计算实时性好。     

移动通信终端多媒体系统设计

采用中星微VC0858在CDMA移动通信终端开发平台上实现了多媒体系统,详细介绍了硬件结构和软件系统的设计.测试结果证明该方案符合移动通信终端实际使用要求.     

Mechanistic Considerations of Bending‐Strain Effects within Organic Semiconductors on Polymer Dielectrics

The development of organic transistors for flexible electronics requires the understanding of device behavior upon the application of strain. Here, a comprehensive study of the effect of polymer‐dielectric and semiconductor chemical structure on the device performance under applied strain is reported. The systematic change of the polymer dielectric results in the modulation of the effects of strain on the mobility of organic field‐effect transistor devices. A general method is demonstrated to lower the effects of strain in devices by covalent substitution of the dielectric surface. Additionally, the introduction of a hexyl chain at the peripheries of the organic semiconductor structure results in an inversion of the effects of strain on device mobility. This novel behavior may be explained by the capacitative coupling of the surface energy variations during applied strain.     

Ho:YAG激光心肌血管重建术的实验研究

建立狗急性心肌梗塞实验模型,以SPECT观察钬激光心肌血管重建术后心肌缺血的改善情况及激光孔道的组织学变化,确定钬激光心肌血管重建术的有效性及适宜的激光参数,为钬激光心肌血管重建术的临床应用提供资料.     

Fabrication of organic semiconductor crystalline thin films and crystals from solution by confined crystallization

Highly crystalline thin films of organic semiconductors processed from solution for electronic devices are difficult to achieve due to a slow and preferential three-dimensional growth of the crystals. Here we describe the development of a processing technique to induce a preferential two-dimensional crystalline growth of organic semiconductors by means of minimizing one dimension and confining the solution in two dimensions into a thin layer. The versatility of the process is demonstrated by processing small molecules (TIPS-pentacene and C₆₀) and a polymer (P3HT), all from solvents with a relatively low boiling point, to obtain crystalline thin films. The thin films show an improved in-plane packing of the molecules compared to films processed under similar conditions by spin coating, which is beneficial for the use in organic field-effect transistors.     

一种数字光栅无掩模光刻对准方法

针对数字微反射镜装置(DMD)无掩模光刻系统,提出并研究了一种数字光栅无掩模光刻对准方法,将硅片的微位移放大显示在数字光栅与硅片物理光栅叠加产生的叠栅条纹中。建立了基于DMD的数字光栅无掩模光刻对准模型,设计了对准标记以及具体的实现方案,并对模型进行了数值仿真和初步的实验验证。结果表明,采用频率可变、图像干净、具有良好周期性结构的数字光栅代替传统的真实掩模光栅,真正实现了零掩模成本;并且采用变频率数字光栅可以扩大测量范围,减小位移测量误差。最终可以实现深亚微米的对准精度,满足目前无掩模光刻对准精度的要求。     

Pt纳米颗粒辅助化学刻蚀重掺杂p型单晶硅研究

首先在SiO2/Si衬底上磁控溅射了一层超薄Pt薄膜,并通过快速热退火形成了分离的Pt纳米颗粒阵列。接着研究了在氢氟酸和双氧水的混合溶液中Pt纳米颗粒辅助化学刻蚀重掺杂p型单晶硅片的特性。结果表明,当氢氟酸的浓度为1.06 mol/L时,样品表面分布着许多Pt岛链,在硅衬底表面没有观察到任何孔洞;当氢氟酸的浓度上升到5.3 mol/L时,样品表面起伏不平,出现许多大小不一的小丘,岛链状Pt减少;当氢氟酸的浓度增加到26.5 mol/L时,样品表面出现大量的孔洞,Pt岛链进一步减少。通过对样品的剖面结构进行观察,发现硅衬底中形成了致密的介孔,同时还观察到底部含有Pt岛状物的不规则沟槽,并且介孔的生长速率快于沟槽。最后,对上述实验现象的形成机制进行了讨论。     

基于信息熵的实验教学量化研究

本文运用信息熵理论,对实验教学行为进行量化分析研究,评测实验教学中存在的问题,并通过调整实验教学组织方法验证实验教学研究结果.     

Field‐Induced n‐Doping of Black Phosphorus for CMOS Compatible 2D Logic Electronics with High Electron Mobility

Black phosphorus (BP) has been considered as a promising two‐dimensional (2D) semiconductor beyond graphene owning to its tunable direct bandgap and high carrier mobility. However, the hole‐transport‐dominated characteristic limits the application of BP in versatile electronics. Here, we report a stable and complementary metal oxide semiconductor (COMS) compatible electron doping method for BP, which is realized with the strong field‐induced effect from the K⁺ center of the silicon nitride (Si_xN_y). An obvious change from pristine p‐type BP to n type is observed after the deposit of the Si_xN_y on the BP surface. This electron doping can be kept stable for over 1 month and capable of improving the electron mobility of BP towards as high as ~176 cm² V^–1 s^–1. Moreover, high‐performance in‐plane BP p‐n diode and further logic inverter were realized by utilizing the n‐doping approach. The BP p‐n diode exhibits a high rectifying ratio of ~10⁴. And, a successful transfer of the output voltage from “High” to “Low” with very few voltage loss at various working frequencies were also demonstrated with the constructed BP inverter. Our findings paves the way for the success of COMS compatible technique for BP‐based nanoelectronics.