A study of the effects of collector and environment parameters on the performance of a solar powered solid adsorption refrigerator

Based on the heat and mass transfer model validated by experiment, the performance of the plate solar ice-maker is analyzed systemically with the opinion of two-type characteristic parameters, which includes parametric effects of adsorbent bed of solar ice-maker and outer parameters referring to circumstance. A large number of simulations were undertaken to test the performance of the refrigerator for various collector design parameters and environmental parameters. These works are beneficial to further study the optimization design of a solar cooling system.     

Scattering and absorption by thin metal wires in rectangularwaveguide-FDTD simulation and physical experiments

The high-frequency internal impedance model of a round ohmic conductor is incorporated into the subcell thin-wire formulation of the finite-difference time-domain method to model the microwave properties of metal wires. For magnetic metals, such as steel, an effective conductivity is introduced to account for the increase in ohmic loss due to the high-frequency permeability. Physical experiments with half-wave resonant copper- and steel-wire inclusions, supported by a dielectric slab in a standard S-band rectangular waveguide, support the formulation     

Suppression control method for torque vibration of three-phase HB-type stepping motor utilizing feedforward control

This paper proposes a method to reduce the vibration of the three-phase HB-type stepping motor with cogging torque by the feedforward compensation control. The compensation signal to suppress the vibration of the motor frame is obtained by the repetitive controller installing an online Fourier transformer and utilizing an acceleration sensor attached to the motor frame or an acoustic sensor such as a microphone placed close to the frame. The sensor is used only for the acquisition of the feedforward compensation data. The feedforward compensation signal at an arbitrary operating point is derived from the amplitude and phase data of the frequency components and the operating point data. Compensation data obtained by the repetitive controller is applied to the operating point changed by reference frequency and load condition in steady state. The compensation signal for the new operating point will be generated from compensation data utilizing polynomial equation approximation and linear interpolation method. The effectiveness of this proposed method is confirmed by the experimental results.     

A Combined Antenna Array and Multi-User Detection DS-CDMA Receiver in Single-Path and Multi-Path Fading Channels

An adaptive antenna array is incorporated into a decorrelatingmulti-user detector to effectively increase the DS-CDMA system capacity.Capacity improvement is due to beamforming gain, spatial diversity gain(assuming large angle spread), and the decorrelating effect. Thereceiver has been analyzed for the cases of sufficiently andinsufficiently spaced receiving antennas. The receiver consists of afront-end beamformer for every user in the cell and has knowledge of allusers' signature sequences. The beamformer estimates the desired userchannel vector, enhancing its signal and reducing the co-channelinterference from other directions. The multi-user detection, exploitingknowledge of other users, rejects those interferers whose arrival anglesare close to that of the desired user. The average uncoded Bit ErrorRate (BER) as a function of the number of in-beam active users, theaverage antenna Signal-to-Noise Ratio (SNR), and the number of receivingantennas is examined in both single-path and multi-path Rayleigh fadingchannels. Analysis shows an increase in system capacity proportional tothe number of receiving antennas.     

Hybrid ARQ scheme employing TCM and packet combining

A new hybrid automatic repeat request scheme employing packet combining based on the Viterbi decoder is presented. It is shown that the proposed form of combining, together with a rearrangement of the signal constellation, can outperform similar forms of packet combining such as average diversity combining     

Novel level-identifying circuit for flash multilevel memories

This paper presents a high-speed, small-area circuit specifically designed to identify the levels in the read out operation of a flash multilevel memory. The circuit is based on the analog computation of the Euclidean distance between the current read out from a memory cell and the reference currents that represent the different logic levels. An experimental version of the circuit has been integrated in a standard double-metal 0.7-μm CMOS process with a die area of only 140×100 μm². Operating under a 5-V power supply, this circuit identifies the read-out current of a memory cell, and associates it with the appropriate logic level in 9 ns     

High performance of silicided silicon-sidewall source and drain (S4D) structure

A silicided silicon-sidewall source and drain (S⁴D) structure is proposed for sub-0.1-μm devices. The merit of the S⁴D structure is that the series resistance of the source and drain is significantly reduced since the silicide layer is attached very close to the gate electrode and the silicon sidewall can be doped very highly. Thus, very high drain current drive can be expected, Another advantage of this structure is that the source and drain extensions are produced by the solid-phase diffusion of boron from the highly doped silicon-sidewall. Thus, shallow extensions with very high doping can be realized. A 75-nm gate length pMOSFET fabricated with this structure is shown to exhibit excellent electrical characteristics     

Voiced speech excitation synthesis using a sinusoidal model

A modification to the `shape-invariant' sinusoidal speech model is proposed, whereby the phases of the component sinewaves used for the excitation are made to add coherently at each glottal closure. Applied to pitch and time-scale modification, higher quality synthetic speech is produced when large changes are required     

Elevated temperature performance of pseudomorphic AlGaAs/InGaAsMODFETs

Parametric DC measurements on pseudomorphic AlGaAs/InGaAs modulation-doped field-effect transistors (MODFETs) were carried out over the 300-405 K temperature range. A gradual channel device model was developed to simulate the temperature dependent behavior and assist in the interpretation of the characteristics. The simulations are shown to provide good predictive ability and confirm the physical reasons why the zero temperature coefficient point of a MODFET occurs only for gate bias voltages below the threshold voltage