Micro-prober for wafer-level low-noise measurements in MOS devices

Low-frequency noise measurements represent an interesting investigation technique for the characterization of the quality and reliability of microelectronic materials and devices. Performing meaningful noise measurements at low and very low (f<1 Hz) frequencies, however, may be quite challenging, particularly because of the many sources of interference that superimpose on the noise signal. For this reason, packaged samples are preferred because they allow accurate shielding from the external environment, and because keeping the sample in close proximity to the low-noise biasing system and amplifier reduces microphonic and electromagnetic disturbances. Notwithstanding this, the possibility of performing low-frequency noise measurements at wafer level would be quite interesting, both because of the ease of obtaining wafer-level samples from industries with respect to packaged samples, and because this would avoid possible packaging-process induced device degradation. The purpose of this work is to demonstrate that it is, in fact, possible to design and build a dedicated probe system for performing high-sensitivity, low-frequency noise measurements on metal-oxide-semiconductor devices at wafer level.     

A comparison of transformation methods for evaluating two‐dimensional weakly singular integrals

Accurate numerical evaluation of integrals arising in the boundary element method is fundamental to achieving useful results via this solution technique. In this paper, a number of techniques are considered to evaluate the weakly singular integrals which arise in the solution of Laplace's equation in three dimensions and Poisson's equation in two dimensions. Both are two‐dimensional weakly singular integrals and are evaluated using (in a product fashion) methods which have recently been used for evaluating one‐dimensional weakly singular integrals arising in the boundary element method. The methods used are based on various polynomial transformations of conventional Gaussian quadrature points where the transformation polynomial has zero Jacobian at the singular point. Methods which split the region of integration into sub‐regions are considered as well as non‐splitting methods. In particular, the newly introduced and highly accurate generalized composite subtraction of singularity and non‐linear transformation approach (GSSNT) is applied to various two‐dimensional weakly singular integrals. A study of the different methods reveals complex relationships between transformation orders, position of the singular point, integration kernel and basis function. It is concluded that the GSSNT method gives the best overall results for the two‐dimensional weakly singular integrals studied. Copyright © 2002 John Wiley & Sons, Ltd.     

Electrochemical synthesis and characterization of chloride doped polyaniline

Chloride doped polyaniline conducting polymer films have been prepared in a protic acid medium (HCl) by potentiodynamic method in an electrochemical cell and studied by cyclic voltammetry and FTIR techniques. The FTIR spectra confirmed Cl^- ion doping in the polymers. The polymerization rate was found to increase with increasing concentration of aniline monomer. But the films obtained at high monomer concentration were rough having a nonuniform flaky polyaniline distribution. Results showed that the polymerization rate did not increase beyond a critical HCl concentration. Cyclic voltammetry suggested that, the oxidation-reduction current increased with an increase in scan rate and that the undoped polyaniline films were not hygroscopic whereas chloride doped polyaniline films were found to be highly hygroscopic.     

西气东输放空系统的设计与研究

论述了石油天然气行业中的放空系统工作原理，研究了西气东输采用的放空点火系统特点，讨论了放空立管的计算模型，提出了比较符合实际情况的计算模型，指出在桅杆结构的计算分析中，应该考虑钢丝绳的弹性支撑作用。钢丝绳的弹性支撑作用对结构的周期计算、风荷载导算、地震作用的计算都有较大的影响。     

番禺30-1砂岩强水驱气藏储层非均质性研究

针对垂向非均质性严重且边底水能量强的番禺30-1气田面临的潜在开发问题，通过岩心分析及测井二次解释，对其夹层特征及储层非均质性等进行了研究，划分出19个流动单元并定量描述了各流动单元的特征参数，建立了该气田的精细地质模型。综合评价表明，新建的地质模型具有较高的精度，为该气藏合理开发提供了坚实的地质基础。     

A New Hand-Held Microsystem Architecture for Biological Analysis

This paper presents a hand-held microsystem based on new fully integrated magnetoresistive biochips for biomolecular recognition (DNA hybridization, antibody antigen interaction, etc.). Magnetoresistive chip surfaces are chemically treated, enabling the immobilization of probe biomolecules such as DNA or antibodies. Fluid handling is also integrated in the biochip. The proposed microsystem not only integrates the biochip, which is an array of 16times16 magnetoresistive sensors, but it also provides all the electronic circuitry for addressing and reading out each transducer. The proposed architecture and circuits were specifically designed for achieving a compact, programmable and portable microsystem. The microsystem also integrates a hand-held analyzer connected through a wireless channel. A prototype of the system was already developed and detection of magnetic nanoparticles was obtained. This indicates that the system may be used for magnetic label based bioassays     

A power-driven multiplication instruction-set design method for ASIPs

This paper presents a novel power-driven multiplication instruction-set design method for application-specific instruction-set processors (ASIPs). Based on a dual-and-configurable-multiplier structure, our proposed method devises a multiplication instruction set for low-power ASIPs. Our method exploits the execution sequences of multiplication instructions and effective bit widths of variables to reduce power consumed by redundant multiplication bits while minimizing the multiplication execution time. Experimental results on a set of DSP programs demonstrate that our proposed method achieves significant power reduction (up to 18.53%) and execution time improvement (up to 10.43%) with 18% area overhead.     

The effect of photon energy and temperature on the persistent tunneling photoconductivity effect in Al/δ(Si)-GaAs structures

The phenomenon of persistent tunneling photoconductivity was studied using the tunneling spectroscopy technique at liquid-helium temperature: the separation between the unoccupied levels in a δ-doped layer at the GaAs surface decreased after illumination. This decrease was due to an increase in the width of the quantum well of the δ-doped layer. For photon energies hv exceeding the GaAs band gap E _g , this increase in the width of the quantum well was related to the accumulation of positive charge in the depth of GaAs induced by the generation of the electron-hole pairs and photoionization of deep centers. For hv < E _g (including the case of CO₂ laser), only photoionization is important. The experimental data agree with the self-consistent calculations. The critical temperature for the effect has been determined (T _c = 45 K); at higher temperatures, the effect disappears.