Systematic characterization of Cl2 reactive ion etchingfor improved ohmics in AlGaN/GaN HEMTs

Pre-metal-deposition reactive ion etching (RIE) was performed on an Al_0.3Ga_0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs     

Security issues for downloaded code in mobile phones

'Software defined radio' (SDR) is a technology that will appear in future generations of mobile phones, i.e. following the third-generation mobile phone technology that is currently being defined and developed. Early versions of 'pragmatic' SDR will allow the terminal to be reconfigured at any level of its protocol stack. Ultimately, the 'pure' SDR technology will allow a mobile phone or terminal to have its air interface software configured or reconfigured by other software (or software parameters) that have been downloaded to the terminal, e.g. over the air, or from a remote server via the Internet and one's personal computer (PC). A number of security issues arise with downloaded code that implements the air interface functions, and these may not be obvious simply from looking at the way PC software is updated on-line today. This paper starts with an outline of the code that allows a mobile phone to operate over a particular air interface. This sets the baseline for a discussion of the security issues surrounding the change of this code from one that is fixed and downloaded once only, to code that is reconfigurable during the life of a product.     

A distribution function for double-bit upsets

It is suggested that the chord length distribution method could be useful for predicting double-bit upset rates in certain circumstances. A chord length distribution function for simultaneous path lengths in two parallelepipeds, applicable to a unidirectional flux, is derived. A proof of the system is outlined for the case under consideration     

Synthesis and characterisation of copolyesters from poly(ethylene terephthalate) and poly(hexamethylene terephthalate)

Copolyesters containing poly(ethylene terephthalate) and poly(hexamethylene terephthalate) (PHT) were prepared by a melt condensation reaction. The copolymers were characterised by infrared spectroscopy and intrinsic viscosity measurements. The density of the copolyesters decreased with increasing percentage of PHT segments in the backbone. Glass transition temperatures (T_g). melting points (T_m) and crystallisation temperatures (T_c) were determined by differential scanning calorimetry. An increase in the percentage of PHT resulted in decrease in T_g, T_m and T_c. The as-prepared copolyesters were crystalline in nature and no exotherm indicative of cold crystallisation was observed. The relative thermal stability of the polymers was evaluated by dynamic thermogravimetry in a nitrogen atmosphere. An increase in percentage of PHT resulted in a decrease in initial decomposition temperature. The rate of crystallisation of the copolymers was studied by small angle light scattering. An increase in percentage of PHT resulted in an increase in the rate of crystallisation.     

Incremental transmission loss allocation under pool dispatch

Incremental transmission loss analysis has been used for decades, but recent interest in its application to loss allocation calls for new in-depth results. This paper demonstrates that, for incremental methods to be applied correctly in loss allocation, it is first necessary to specify the load distribution and loss supply strategies. Incremental loss allocation among bus power injections is shown to be arbitrary and, therefore, open to challenge as discriminatory. Loss allocation is possible among incremental loads and/or generators, but the proportion of the total losses assigned to either one is arbitrary. Unique, nonarbitrary incremental loss allocations are however possible among the "equivalent" incremental bilateral exchanges between generators and loads. From these basic components it is possible then to calculate the allocation among generators or loads in any specified proportion. The main results, although developed initially for small increments, are extended to large variations. Finally, a general incremental loss allocation algorithm is developed and tested     

Simulation of magnetic component models in electric circuitsincluding dynamic thermal effects

It is essential in the simulation of power electronics applications to model magnetic components accurately. In addition to modeling the nonlinear hysteresis behavior, eddy currents and winding losses must be included to provide a realistic model. In practice the losses in magnetic components give rise to significant temperature increases which can lead to major changes in the component behavior. In this paper a model of magnetic components is presented which integrates a nonlinear model of hysteresis, electro-magnetic windings and thermal behavior in a single model for use in circuit simulation of power electronics systems. Measurements and simulations are presented which demonstrate the accuracy of the approach for the electrical, magnetic and thermal domains across a variety of operating conditions, including static thermal conditions and dynamic self heating     

Terahertz/optical mixing in symmetric semiconductor quantum wells embedded in optical microcavities

A quantum well (QW) in the simultaneous presence of a terahertz field polarized in the growth direction and an incident optical field near an excitonic resonance results in substantial frequency mixing between the terahertz and optical fields. In particular, a response at new frequencies given by the input optical frequency plus or minus multiples of the terahertz frequency occurs-the terahertz sidebands. In a symmetric QW, the dominant contribution to terahertz-sideband formation is the high-frequency modulation of the overlap integral of the relevant conduction- and valence-subband envelope functions that determine the strength of the interband dipole moment. terahertz-sideband generation is shown to be strongly enhanced in a high quality-factor optical microcavity. Numerical values of the reflected intensity into the first terahertz sideband normalized with respect to the reflected intensity at the fundamental as large as /spl sim/10% are estimated. This suggests that terahertz-sideband generation in semiconductor microcavities is a promising option worthy of exploration for wavelength conversion for wavelength-division multiplexing applications.     

Front Cover

In this paper, the authors present the results of experiments which clearly demonstrate a technical basis confirming that the carrier frequency harmonics data can be used for diagnostics relative to motor stator insulation degradation.