全文获取类型
收费全文 | 260507篇 |
免费 | 4524篇 |
国内免费 | 1817篇 |
专业分类
电工技术 | 5412篇 |
技术理论 | 5篇 |
综合类 | 1164篇 |
化学工业 | 42039篇 |
金属工艺 | 11020篇 |
机械仪表 | 7741篇 |
建筑科学 | 6590篇 |
矿业工程 | 1660篇 |
能源动力 | 5592篇 |
轻工业 | 25796篇 |
水利工程 | 2889篇 |
石油天然气 | 5997篇 |
武器工业 | 243篇 |
无线电 | 27785篇 |
一般工业技术 | 49188篇 |
冶金工业 | 47204篇 |
原子能技术 | 5616篇 |
自动化技术 | 20907篇 |
出版年
2021年 | 2476篇 |
2019年 | 2118篇 |
2018年 | 3385篇 |
2017年 | 3357篇 |
2016年 | 3683篇 |
2015年 | 2798篇 |
2014年 | 4580篇 |
2013年 | 11353篇 |
2012年 | 7685篇 |
2011年 | 10190篇 |
2010年 | 8114篇 |
2009年 | 8666篇 |
2008年 | 9472篇 |
2007年 | 9585篇 |
2006年 | 8434篇 |
2005年 | 7386篇 |
2004年 | 6656篇 |
2003年 | 6200篇 |
2002年 | 6208篇 |
2001年 | 6318篇 |
2000年 | 5906篇 |
1999年 | 5875篇 |
1998年 | 12854篇 |
1997年 | 9534篇 |
1996年 | 7275篇 |
1995年 | 5525篇 |
1994年 | 5081篇 |
1993年 | 4947篇 |
1992年 | 3943篇 |
1991年 | 3751篇 |
1990年 | 3823篇 |
1989年 | 3770篇 |
1988年 | 3530篇 |
1987年 | 3019篇 |
1986年 | 3050篇 |
1985年 | 3408篇 |
1984年 | 3321篇 |
1983年 | 3074篇 |
1982年 | 2698篇 |
1981年 | 2902篇 |
1980年 | 2643篇 |
1979年 | 2839篇 |
1978年 | 2736篇 |
1977年 | 2841篇 |
1976年 | 3693篇 |
1975年 | 2457篇 |
1974年 | 2290篇 |
1973年 | 2320篇 |
1972年 | 1981篇 |
1971年 | 1785篇 |
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
971.
Polycrystalline magnesium films were deposited under ultrahigh vacuum by thermal evaporation onto a cooled silica substrate. During the growth process of a film a number of lattice defects are incorporated. It was found that the defect density decreases with increasing thickness. An annealing study of the electrical resistance and defect density in magnesium films was made. The results were interpreted on the basis of Vand's theory. The function F0 expressing the law of distribution of the decay energies exhibited a maximum. For thick films there was no appreciable variation in the activation energy with thickness. In this case the evaluated activation energy E was found to be about 0.35 eV. For very thin films this energy decreases with increasing thickness. 相似文献
972.
Andre C.L. Carlin J.A. Boeckl J.J. Wilt D.M. Smith M.A. Pitera A.J. Lee M.L. Fitzgerald E.A. Ringel S.A. 《Electron Devices, IEEE Transactions on》2005,52(6):1055-1060
High-performance p/sup +//n GaAs solar cells were grown and processed on compositionally graded Ge-Si/sub 1-x/Ge/sub x/-Si (SiGe) substrates. Total area efficiencies of 18.1% under the AM1.5-G spectrum were measured for 0.0444 cm/sup 2/ solar cells. This high efficiency is attributed to the very high open-circuit voltages (980 mV (AM0) and 973 mV (AM1.5-G)) that were achieved by the reduction in threading dislocation density enabled by the SiGe buffers, and thus reduced carrier recombination losses. This is the highest independently confirmed efficiency and open-circuit voltage for a GaAs solar cell grown on a Si-based substrate to date. Larger area solar cells were also studied in order to examine the impact of device area on GaAs-on-SiGe solar cell performance; we found that an increase in device area from 0.36 to 4.0 cm/sup 2/ did not degrade the measured performance characteristics for cells processed on identical substrates. Moreover, the device performance uniformity for large area heteroepitaxial cells is consistent with that of homoepitaxial cells; thus, device growth and processing on SiGe substrates did not introduce added performance variations. These results demonstrate that using SiGe interlayers to produce "virtual" Ge substrates may provide a robust method for scaleable integration of high performance III-V photovoltaics devices with large area Si wafers. 相似文献
973.
Methods for finding the parameters (energies and capture coefficients for electrons and holes) of the levels involved in the formation of the recombination flux are suggested. The temperature variation of these parameters for AlGaN/InGaN/GaN and InGaN/SiC structures is discussed. The parameters of the levels responsible for tunneling recombination are determined. 相似文献
974.
Due to interference, path loss, multipath fading, background noise, and many other factors, wireless communication normally
cannot provide a wireless link with both a high data rate and a long transmission range. To address this problem, striping
network traffic in parallel over multiple lower-data-rate but longer-transmission-range wireless channels may be used. In
this paper, we propose a new striping method and evaluate its performances over multiple IEEE 802.11(b) channels under various
conditions. Our extensive simulation results show that this method is quite effective for such an application.
S.Y. Wang is an Associate Professor of the Department of Computer Science and Information Engineering at National Chiao Tung University,
Taiwan. He received his Master and Ph.D. degree in computer science from Harvard University in 1997 and 1999, respectively.
His research interests include wireless networks, Internet technologies, network simulations, and operating systems. He is
the author of the NCTUns 2.0 network simulator and emulator, which is being widely used by network and communication researchers.
More information about the tool is available at http://NSL.csie.nctu.edu.tw/nctuns.html.
C.H. Hwang received his master degree in computer science from NCTU in 2002 and currently is working for a network company.
C.L. Chou currently is a third-year Ph.D. student at the Department of Computer Science and Information Engineering, National Chiao
TungUniversity (NCTU), Taiwan. He received his master degree in computer science from NCTU in 2002. 相似文献
975.
Ultraviolet (UV) disinfection is becoming increasingly popular as an alternative disinfection technology to chlorination in recent years. In this study, we investigated the photoreactivation of Escherichia coli following medium-pressure (MP) UV disinfection of synthetic water by a bench-scale collimated beam apparatus. The UV doses ranged from 1.6 -19.7 mWs/cm2 and photoreactivation was investigated for 6 hours under fluorescent light. In addition, chloramination was applied after UV disinfection to investigate its ability to control photoreactivation. It was found that photoreactivation occurred for all UV doses tested and the increase in bacteria numbers ranged from 0.04 to 1.35 log10. However, the degree of photoreactivation decreased with increased UV doses. Chloramination experiments revealed that the addition of 0.5 mg/l of monochloramine resulted in suppression of photoreactivation for 1 hour only. An increased monochloramine dose of 1 mg/l was found to prevent photoreactivation for the entire duration of the experiment. The results of this study have shown that photoreactivation occurs even after MP UV disinfection, although it is of a lesser extent at higher UV doses. This study has also established that secondary chloramination can effectively suppress and eliminate photoreactivation with a chloramine dose of 1 mg/l. 相似文献
976.
L. A. Kovaleva N. M. Nasyrov A. M. Khaidar 《Journal of Engineering Physics and Thermophysics》2004,77(6):1184-1191
The results of theoretical investigations of the possibility of using intense high-frequency electromagnetic radiation in fields of high-viscosity oils with the aim of intensifying their production have been given. Expressions of the distribution of the electromagnetic field strength and the field of heat sources occurring in an oil bed under the action of high-frequency electromagnetic radiation transferred to the bed through a horizontal well have been obtained. A two-dimensional mathematical model of the process of production of oil through horizontal wells with simultaneous high-frequency electromagnetic action has been developed. The efficiency and profitableness of the method from the viewpoint of the energy balance have been evaluated.Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 77, No. 6, pp. 105–111, November–December, 2004. 相似文献
977.
Pin&Play: the surface as network medium 总被引:2,自引:0,他引:2
Van Laerhoven K. Villar N. Schmidt A. Gellersen H.-W. Hakansson M. Holmquist L.E. 《Communications Magazine, IEEE》2003,41(4):90-95
Integrating appliances in the home through a wired network often proves to be impractical: routing cables is usually difficult, changing the network structure afterward even more so, and portable devices can only be connected at fixed connection points. Wireless networks are not the answer either: batteries have to be regularly replaced or changed, and what they add to the device's size and weight might be disproportionate for smaller appliances. In Pin&Play, we explore a design space in between typical wired and wireless networks, investigating the use of surfaces to network objects that are attached to it. This article gives an overview of the network model, and describes functioning prototypes that were built as a proof of concept. 相似文献
978.
Cuddihy P. Hinman R.T. Avestruz A. Lupton E.C. Livshin G. Rodriguez J.I. Leeb S.B. Clark C.M. Horvath K.J. Volicer L. Landfeldt B. Kay J. Kummerfeld R. Quigley A. West D. Apted T. Sinclair G. Haniff D.J. Kalawsky R. Atkins D. Lewin M. Brown S.J. Shahmehri N. Aberg J. Maciuszek D. Chisalita I. 《Pervasive Computing, IEEE》2004,3(2):48-50
This issue's Works in Progress department presents six abstracts for projects that are developing interesting solutions to the elderly's quality of life challenges. The first two abstracts discuss projects that will help provide the elderly with freedom and independence by instrumenting their environments with supportive technology. The next two abstracts discuss projects building specialized user interfaces for addressing some of the challenges associated with aging, such as vision impairment. The final two abstracts present projects that will aid independence for the elderly by providing remote monitoring and assistance. 相似文献
979.
Noise modeling for RF CMOS circuit simulation 总被引:2,自引:0,他引:2
Scholten A.J. Tiemeijer L.F. van Langevelde R. Havens R.J. Zegers-van Duijnhoven A.T.A. Venezia V.C. 《Electron Devices, IEEE Transactions on》2003,50(3):618-632
The RF noise in 0.18-/spl mu/m CMOS technology has been measured and modeled. In contrast to some other groups, we find only a moderate enhancement of the drain current noise for short-channel MOSFETs. The gate current noise on the other hand is more significantly enhanced, which is explained by the effects of the gate resistance. The experimental results are modeled with a nonquasi-static RF model, based on channel segmentation, which is capable of predicting both drain and gate current noise accurately. Experimental evidence is shown for two additional noise mechanisms: 1) avalanche noise associated with the avalanche current from drain to bulk and 2) shot noise in the direct-tunneling gate leakage current. Additionally, we show low-frequency noise measurements, which strongly point toward an explanation of the 1/f noise based on carrier trapping, not only in n-channel MOSFETs, but also in p-channel MOSFETs. 相似文献
980.
A low phase noise silicon 18-GHz push-push VCO 总被引:1,自引:0,他引:1
The design and measurement of a push-push voltage controlled oscillator (VCO) at 18.66-18.3 GHz are presented in this paper. The circuit includes two packaged silicon transistors (Siemens BFP 540F) and a microstrip resonator tuned by two GaAs varactor diodes (M/A-COM ML46580). A 360-MHz tuning range is obtained with an output power of 0-3.1 dBm. The fundamental rejection is around 17 dB for a wide range of collector bias current. The phase noise is below -103 dBc/Hz at 100-kHz offset and below -122 dBc/Hz at 1 MHz for the entire tuning bandwidth. 相似文献