Broadband near-infrared (NIR) phosphors have received increasing attention for fabricating phosphor-converted light-emitting diodes (pc-LEDs) as NIR light source. Most of the reported broadband NIR phosphors originate from Cr3+ in weak crystal field environments. Herein, we report a luminescent material, MgAlSiN3:Mn2+ with CaAlSiN3-type structure, demonstrating that broadband deep-red-to-NIR emission can be achieved via doping Mn2+ into crystallographic sites with strong crystal field in inorganic solids. This phosphor is synthesized via easy-handle solid-state reaction, and the optimized sample, (Mg0.93Mn0.07) AlSiN3 shows an emission band with peak at ~754 nm, FWHM of 150 nm, and internal quantum efficiency of 70.1%. The photoluminescence intensity can further be enhanced by co-doping Eu2+ as sensitizer. This work provides a new strategy for discovering new broadband NIR phosphors using Mn2+ in strong crystal field as luminescence center. 相似文献
Rate control at the MAC-layer is one of the fundamental building blocks in many wireless networks. Over the past two decades, around thirty mechanisms have been proposed in the literature. Among them, there are mechanisms that make rate selection decisions based on sophisticated measurements of wireless link quality, and others that are based on straight-forward heuristics. Minstrel, for example, is an elegant mechanism that has been adopted by hundreds of millions of computers, yet, not much was known about its performance until recently. The purpose of this paper is to provide a comprehensive survey and analysis of the existing solutions from the two fundamental aspects of rate control—metrics and algorithms. We also review how these solutions were evaluated and compared against each other. Based on our detailed studies and observations, we share important insights on future development of rate control mechanisms at the MAC-layer. This discussion also takes into account the recent developments in wireless technologies and emerging applications, such as Internet-of-Things, and shows issues that need to be addressed in the design of new rate control mechanisms suitable for these technologies and applications.