Effect of Sb implantation on copper silicides formation and morphology after annealing of Cu/Si structures

In this work, the solid state reaction between a thin film of copper and silicon has been studied using Rutherford backscattering spectroscopy, X-ray diffraction, scanning electron microscopy and microprobe analysis. Cu films of 400 and 900 Å thicknesses are thermally evaporated on Si(1 1 1) substrates, part of them had previously been implanted with antimony ions of 5×10¹⁴ or 5×10¹⁵ at. cm⁻² doses. The samples are heat-treated in vacuum at temperatures in the range 200–700 °C for various times. The results show the growth and formation of Cu₃Si and Cu₄Si silicides under crystallites shape dispatched on the sample surface, independently of the implantation dose. On the other hand, it is established that the copper layer is less and less consumed as the antimony dose increases, resulting in the accumulation of Sb⁺ ions at silicide/Si interface and in the silicide layer close to surface. The exposure of samples to air at room temperature shows the stability of Cu₄Si phase whereas the Cu₃Si silicide disappears to the benefit of the silicon dioxide formation. The observed phenomena are discussed.     

A VQ-based blind image restoration algorithm

Learning-based algorithms for image restoration and blind image restoration are proposed. Such algorithms deviate from the traditional approaches in this area, by utilizing priors that are learned from similar images. Original images and their degraded versions by the known degradation operator (restoration problem) are utilized for designing the VQ codebooks. The codevectors are designed using the blurred images. For each such vector, the high frequency information obtained from the original images is also available. During restoration, the high frequency information of a given degraded image is estimated from its low frequency information based on the codebooks. For the blind restoration problem, a number of codebooks are designed corresponding to various versions of the blurring function. Given a noisy and blurred image, one of the codebooks is chosen based on a similarity measure, therefore providing the identification of the blur. To make the restoration process computationally efficient, the principal component analysis (PCA) and VQ-nearest neighbor approaches are utilized. Simulation results are presented to demonstrate the effectiveness of the proposed algorithms.     

QR factoring to compute the GCD of univariate approximate polynomials

We present a stable and practical algorithm that uses QR factors of the Sylvester matrix to compute the greatest common divisor (GCD) of univariate approximate polynomials over /spl Ropf/[x] or /spl Copf/[x]. An approximate polynomial is a polynomial with coefficients that are not known with certainty. The algorithm of this paper improves over previously published algorithms by handling the case when common roots are near to or outside the unit circle, by splitting and reversal if necessary. The algorithm has been tested on thousands of examples, including pairs of polynomials of up to degree 1000, and is now distributed as the program QRGCD in the SNAP package of Maple 9.     

Scaling planar silicon devices

The generation-over-generation scaling of critical CMOS technology parameters is ultimately bound by nonscalable limitations, such as the thermal voltage and the elementary electronic charge. Sustained improvement in performance and density has required the introduction of new device structures and materials. Partially depleted SOI, a most recent MOSFET innovation, has extended VLSI performance while introducing unique idiosyncrasies. Fully depleted SOI is one logical extension of this device design direction. Gate dielectric tunneling, device self-heating, and single-event upsets present developers of these next-generation devices with new challenges. Strained silicon and high-permittivity gate dielectric are examples of new materials that will enable CMOS developers to continue to deliver device performance enhancements in the sub-100 nm regime.     

Effects of SiN passivation and high-electric field on AlGaN-GaN HFET degradation

The authors report on the effects of silicon nitride (SiN) surface passivation and high-electric field stress (hot electron stress) on the degradation of undoped AlGaN-GaN power HFETs. Stressed devices demonstrated a decrease in the drain current and maximum transconductance and an increase in the parasitic drain series resistance, gate leakage, and subthreshold current. The unpassivated devices showed more significant degradation than SiN passivated devices. Gate lag phenomenon was observed from unpassivated devices and removed by SiN passivation. However, SiN passivated devices also showed gate lag phenomena after high-electric field stress, which suggests possible changes in surface trap profiles occurred during high-electric field stress test.     

Nonstationary Simulation Model of Absorber with Falling Film of Suspension

A nonstationary model of SO₂ absorption from a gas phase to a countercurrent falling film of absorbing slurry was developed. Laminar, wavy and turbulent film structures were considered based on published information. Resistances to the mass transfer on the gas and the liquid sides of the interphase were considered, together with chemical reactions in the liquid phase. Relevant chemical equilibria in the liquid phase were modeled. Original experimental data on the neutralization reagent dissolution rate presented as a polydispersed two‐phase system of solids and on the rate of dissolved sulfite oxidation were used. The model was verified with experimental data from a laboratory‐scale falling‐film absorber using a single vertical tube under various geometrical and operating conditions, and a very good agreement was found with the experiment. Parametric sensitivity analysis showed the critical parts of the model.     

The effects of nonlocal impact ionization on the speed of avalanche photodiodes

The nonlocal enhancement in the velocities of charge carriers to ionization is shown to outweigh the opposing effects of dead space, increasing the avalanche speed of short avalanche photodiodes (APDs) over the predictions of a conventional local model which ignores both of these effects. The trends in the measured gain-bandwidth product of two short InAlAs APDs reported in the literature support this result. Relatively large speed benefits are predicted to result from further small reductions in the lengths of short multiplication regions.     

Evaluation of Atmospheric and Vacuum Residues Using Molecular Distillation and Optimization

The term atmospheric residue describes the material at the bottom of the atmospheric distillation tower having a lower boiling point limit of about 340°C; the term vacuum residue (heavy petroleum fractions) refers to the bottom of the vacuum distillation, which has an atmospheric equivalent boiling point (AEBP) above 540°C. In this work, the objective is to evaluate the behavior of different kinds of Brazilian atmospheric and vacuum residues using molecular distillation. The Falling Film Molecular Distillator was used. For the results obtained through this process, a significant range of temperature can be explored avoiding the thermal decomposition of the material. So these results are very important to the refinery decisions and improvements. The Experimental Factorial Design results showed that the temperature has more influence on the process than the feed flow rate, when a higher percentage of distillate is required.     

Simulated recruitment of riparian trees and shrubs under natural and regulated flow regimes on the Wisconsin River,USA

Models that link ecological responses to hydrologic changes are important for assessing the effects of flow regulation on aquatic and riparian ecosystems. Based on the Recruitment Box Model, a graphical model used to prescribe environmental flows for cottonwood (Populus spp.) recruitment, we designed a simulation model to represent the influence of river flow dynamics on seedling recruitment of riparian pioneer woody plants. The model simulates the influence of temporal patterns of river stage on dispersal, germination, initial recruitment and over‐winter survival of first‐year seedlings of riparian pioneer shrubs and trees. We used the model to simulate seedling recruitment patterns for five species (Acer saccharinum, Betula nigra, Populus deltoides, Salix nigra and Salix exigua) on the Wisconsin River (Wisconsin, USA) under three flow scenarios: historic (1935–2002), simulated natural (1915–1975) and simulated regulated flows (1915–1975). Simulation results agreed well with field‐observed relative differences among years (1997–2000) in seedling densities for the five focal species. Simulated successful recruitment years were highly synchronous among species, but species differed in their sensitivity to flows at different times during the growing season, consistent with among‐species differences in seed dispersal timing. Comparison of simulated natural and regulated flows for 1915–1975 showed that flow regulation decreased monthly flow variability, increased late summer to winter baseflow and reduced the magnitude of spring peaks. Simulated recruitment and over‐winter survival of tree seedlings of all species was enhanced under the regulated flow scenario, likely due to increased summer baseflow and reductions in peak flood magnitude. Our analyses show the utility of extending the Recruitment Box Model to include multiple species of riparian shrubs and trees, and the effects of post‐colonization flows on their recruitment success. However, some key functional relationships between flow patterns and woody seedling demography (e.g. shear stress thresholds for seedling mortality) have not been adequately quantified and merit further study. Copyright © 2006 John Wiley & Sons, Ltd.