Optimised anaerobic treatment of house-sorted biodegradable waste and slaughterhouse waste in a high loaded half technical scale digester.

Anaerobic co-digestion of organic wastes from households, slaughterhouses and meat processing industries was optimised in a half technical scale plant. The plant was operated for 130 days using two different substrates under organic loading rates of 10 and 12 kgCOD.m(-3).d(-1). Since the substrates were rich in fat and protein components (TKN: 12 g.kg(-1) the treatment was challenging. The process was monitored on-line and in the laboratory. It was demonstrated that an intensive and stable co-digestion of partly hydrolysed organic waste and protein rich slaughterhouse waste can be achieved in the balance of inconsistent pH and buffering NH4-N. In the first experimental period the reduction of the substrate COD was almost complete in an overall stable process (COD reduction >82%). In the second period methane productivity increased, but certain intermediate products accumulated constantly. Process design options for a second digestion phase for advanced degradation were investigated. Potential causes for slow and reduced propionic and valeric acid degradation were assessed. Recommendations for full-scale process implementation can be made from the experimental results reported. The highly loaded and stable codigestion of these substrates may be a good technical and economic treatment alternative.     

High-performance self-aligned SiGeC HBT with selectively grown Si/sub 1-x-y/Ge/sub x/C/sub y/ base by UHV/CVD

Si/sub 1-x-y/Ge/sub x/C/sub y/ selective epitaxial growth (SEG) was performed by cold-wall, ultrahigh-vacuum chemical vapor deposition, and the effects of incorporating C on the crystallinity of Si/sub 1-x-y/Ge/sub x/C/sub y/ layers and the performance of a self-aligned SiGeC heterojunction bipolar transistor (HBT) were evaluated. A Si/sub 1-x-y/Ge/sub x/C/sub y/ layer with good crystallinity was obtained by optimizing the growth conditions. Device performance was significantly improved by incorporating C, as a result of applying Si/sub 1-x-y/Ge/sub x/C/sub y/ SEG to form the base of a self-aligned HBT. Fluctuations in device performance were suppressed by alleviating the lattice strain. Furthermore, since the B out diffusion could be suppressed by incorporating C, the cutoff frequency was able to be increased with almost the same base resistance. A maximum oscillation frequency of 174 GHz and an emitter coupled logic gate-delay time of 5.65 ps were obtained at a C content of 0.4%, which shows promise for future ultrahigh-speed communication systems.     

Preparation, patterning and luminescent properties of nanocrystalline Gd2O3:A (A=Eu, Dy, Sm, Er) phosphor films via Pechini sol–gel soft lithography

Nanocrystalline Gd₂O₃:A (A=Eu³⁺, Dy³⁺, Sm³⁺, Er³⁺) phosphor films and their patterning were fabricated by a Pechini sol–gel process combined with a soft lithography. X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and optical microscopy, UV/vis transmission and photoluminescence (PL) spectra as well as lifetimes were used to characterize the resulting films. The results of XRD indicated that the films began to crystallize at 500 °C and that the crystallinity increased with the elevation of annealing temperatures. Uniform and crack free non-patterned phosphor films were obtained by optimizing the composition of the coating sol, which mainly consisted of grains with an average size of 70 nm and a thickness of 550 nm. Using micro-molding in capillaries technique, we obtained homogeneous and defects-free patterned gel and crystalline phosphor films with different stripe widths (5, 10, 20 and 50 μm). Significant shrinkage (50%) was observed in the patterned films during the heat treatment process. The doped rare earth ions (A) showed their characteristic emission in crystalline Gd₂O₃ phosphor films due to an efficient energy transfer from Gd₂O₃ host to them. Both the lifetimes and PL intensity of the rare earth ions increased with increasing the annealing temperature from 500 to 900 °C, and the optimum concentrations for Eu³⁺, Dy³⁺, Sm³⁺, Er³⁺ were determined to be 5, 0.25, 1 and 1.5 mol% of Gd³⁺ in Gd₂O₃ films, respectively.     

Analysis of feedback for higher order polarization-mode dispersion mitigation of NRZ 40-Gb/s optical transmission

First-order polarization-mode dispersion (PMD) compensation by means of a polarization controller and a differential delay line is not sufficient to guarantee error-free transmission for 40-Gb/s channels when higher order effects severely increase signal distortion. Higher order mitigation is possible by cascading more than one first-order block. However, only two-stage or three-stage devices remain simple enough to be actually controlled. The performance of such higher order PMD compensators is evaluated by means of numerical simulations. Two different feedback signals have been used, demonstrating that first-order and higher order PMD distortion of nonreturn-to-zero (NRZ) pulses at 40 Gb/s can be strongly mitigated for instantaneous values of the differential group delay (DGD) up to the bit slot, when the compensator is properly controlled.     

Construction and qualification of the pre-series MQM superconducting quadrupoles for the LHC insertions

The LHC insertions will be equipped with individually powered MQM superconducting quadrupoles, produced in three versions with magnetic lengths of 2.4 m, 3.4 m, and 4.8 m. The quadrupoles feature a 56 mm aperture coil, designed on the basis of an 8.8 mm wide Rutherford-type NbTi cable for a nominal gradient of 200 T/m at 1.9 K and 5390 A. A total of 96 quadrupoles are in production in Tesla Engineering, UK. In this report we describe the construction of the pre-series MQM quadrupoles and present the results of the qualification tests.     

Search for high-performance probe-fed stacked patches using optimization

High-performance circular probe-fed stacked patch antenna designs are explored through the use of numerical optimization. New trends are sought to aid understanding and to suggest novel solutions. We describe the optimization technique, present a new design trend relating efficiency and bandwidth to the choice of substrate dielectric, and propose and demonstrate a novel, optimized antenna achieving 33% bandwidth whilst maintaining greater than 80% surface wave efficiency.     

End-to-end congestion control schemes: utility functions, random losses and ECN marks

We present a framework for designing end-to-end congestion control schemes in a network where each user may have a different utility function and may experience noncongestion-related losses. We first show that there exists an additive-increase-multiplicative-decrease scheme using only end-to-end measurable losses such that a socially optimal solution can be reached. We incorporate round-trip delay in this model, and show that one can generalize observations regarding TCP-type congestion avoidance to more general window flow control schemes. We then consider explicit congestion notification (ECN) as an alternate mechanism (instead of losses) for signaling congestion and show that ECN marking levels can be designed to nearly eliminate losses in the network by choosing the marking level independently for each node in the network. While the ECN marking level at each node may depend on the number of flows through the node, the appropriate marking level can be estimated using only aggregate flow measurements, i.e., per-flow measurements are not required.     

Miniaturized coplanar waveguide stop band filters based on multiple tuned split ring resonators

A novel compact stop band filter consisting of a 50 /spl Omega/ coplanar waveguide (CPW) with split ring resonators (SRRs) etched in the back side of the substrate is presented. By aligning SRRs with the slots, a high inductive coupling between line and rings is achieved, with the result of a sharp and narrow rejection band in the vicinity of the resonant frequency of the rings. In order to widen the stop band of the filter, several ring pairs tuned at equally spaced frequencies within the desired gap are cascaded. The frequency response measured in the fabricated prototype device exhibits pronounced slopes at either side of the stop band and near 0 dBs insertion loss outside that band. Since SRR dimensions are much smaller than signal wavelength, the proposed filters are extremely compact and can be used to reject frequency parasitics in CPW structures by simply patterning properly tuned SRRs in the back side metal. Additional advantages are easy fabrication and compatibility with MMIC or PCB technology.     

High-resolution long-array thermal ink jet printhead fabricated by anisotropic wet etching and deep Si RIE

This paper describes the fabrication and characterization of a thermal ink jet (TIJ) printhead suitable for high speed and high-quality printing. The printhead has been fabricated by dicing the bonded wafer, which consists of a bubble generating heater plate and a Si channel plate. The Si channel plate consists of an ink chamber and an ink inlet formed by KOH etching, and a nozzle formed by inductively couple plasma reactive ion etching (ICP RIE). The nozzle formed by RIE has squeezed structures, which contribute to high-energy efficiency of drop ejector and, therefore, successful ejection of small ink drop. The nozzle also has a dome-like structure called channel pit, which contributes to high jetting frequency and high-energy efficiency. These two wafers are directly bonded using electrostatic bonding of full-cured polyimide to Si. The adhesive-less bonding provided an ideal shaped small nozzle orifice. Use of the same material (Si substrate) in heater plate and channel plate enables the fabrication of high precision long printhead because no displacement and delamination occur, which are caused by the difference in thermal expansion coefficient between the plates. With these technologies, we have fabricated a 1" long printhead with 832 nozzles having 800 dots per inch (dpi) resolution and a 4 pl. ink drop volume.