Determining the position of a jammer using a virtual-force iterative approach

Wireless communication is susceptible to radio interference and jamming attacks, which prevent the reception of communications. Most existing anti-jamming work does not consider the location information of radio interferers and jammers. However, this information can provide important insights for networks to manage its resource in different layers and to defend against radio interference. In this paper, we investigate issues associated with localizing jammers in wireless networks. In particular, we formulate the jamming effects using two jamming models: region-based and signal-to-noise-ratio(SNR)-based; and we categorize network nodes into three states based on the level of disturbance caused by the jammer. By exploiting the states of nodes, we propose to localize jammers in wireless networks using a virtual-force iterative approach. The virtual-force iterative localization scheme is a range-free position estimation method that estimates the position of a jammer iteratively by utilizing the network topology. We have conducted experiments to validate our SNR-based jamming model and performed extensive simulation to evaluate our approach. Our simulation results have showed that the virtual-force iterative approach is highly effective in localizing a jammer in various network conditions when comparing to existing centroid-based localization approaches.     

Near-zero triangular location through time-slotted mobility prediction

To setup efficient wireless mesh networks, it is fundamental to limit the overhead needed to localize a mobile user. A promising approach is to rely on a rendezvous-based location system where the current location of a mobile node is stored at specific nodes called locators. Nevertheless, such a solution has a drawback, which happens when the locator is far from the source–destination shortest path. This results in a triangular location problem and consequently in increased overhead of signaling messages. One solution to prevent this problem would be to place the locator as close as possible to the mobile node. This requires however to predict the mobile node’s location at all times. To obtain such information, we define a mobility prediction model (an agenda) that, for each node, specifies the mesh router that is likely to be the closest to the mobile node at specific time periods. The location service that we propose formalizes the integration of the agenda with the management of location servers in a coherent and self-organized fashion. To evaluate the performance of our system compared to traditional approaches, we use two real-life mobility datasets of Wi-Fi devices in the Dartmouth campus and Taxicabs in the bay area of San Francisco. We show that our strategy significantly outperforms traditional solutions; we obtain gains ranging from 39 to 72% compared to the centralized scheme and more than 35% compared to a traditional rendezvous-based solution.     

Energy Aware Signal Processing for Software Defined Radio Baseband Implementation

The fast pacing diversity and evolution of wireless communications require a wide variety of baseband implementations within a short time-to-market. Besides, the exponentially increased design complexity and design cost of deep sub-micron silicon highly desire the designs to be reused as much as possible. This yields an increasing demand for reconfigurable/ programmable baseband solutions. Implementing all baseband functionalities on programmable architectures, as foreseen in the tier-2 SDR, will become necessary in the future. However, the energy efficiency of SDR baseband platforms is a major concern. This brings a challenging gap that is continuously broadened by the exploding baseband complexity. We advocate a system level approach to bridge the gap. Specifically, we fully leverage the advantages (programmability) of SDR platforms to compensate its disadvantages (energy efficiency). Highly flexible and dynamic baseband signal processing algorithms are designed and implemented to exploit the abundant dynamics in the environment and the user requirement. Instead of always performing the best effort, the baseband can dynamically and autonomously adjust its work load to optimize the average energy consumption. In this paper, we will introduce such baseband signal processing techniques optimized for SDR implementations. The methodology and design steps will be presented together with 3 representative case studies in HSDPA, WiMAX and 3GPP LTE.     

Low Complexity Antenna Selection Scheme for Multicarrier MIMO Broadcast Communication

A low complexity antenna selection scheme for multicarrier MIMO (Multiple Input Multiple Output) broadcast systems is proposed in this paper. Under special condition of single user in the system or when the number of subcarrier is only one, the system reduces to conventional MIMO-OFDM (Orthogonal Frequency Division Multiplexing) system or MIMO-BC (Broadcast Channel) system respectively. By analysing sub-optimal antenna selection schemes developed earlier for single user MIMO-OFDM systems and single carrier MIMO-BC systems, one can see many similarities which can be extended to multicarrier MIMO broadcast systems. The proposed method exploits these similarities to obtain a low complexity system design with acceptable performance. The performance of the proposed scheme is studied via extensive simulation, and the computational complexity involved is compared to the conventional scheme. A selection gain of approximately 0.5 b/s/Hz is shown to be achievable using only two out of three antennas, and the proposed scheme is able to achieve up to 90% of the gain. This is achieved at a complexity that is significantly lower than the conventional methods, hence the practical implementation of the proposed scheme can be justified.     

An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters

The effects of direct-current (DC) stress on GaN high-electron-mobility transistors (HEMTs) are investigated by means of numerical simulations, by which the creation of an acceptor trap in the AlGaN barrier layer was correlated to the observed experimental degradation. An increase in the trap concentration induces a worsening of the saturated current I _DSS, transconductance g _m, and output conductance g _O. An increase in the length of the trapping region induces a degradation of I _DSS and g _m, but can reduce g _O. Analysis of scattering parameters in the saturation region shows that the cutoff frequency f _T matches the trend of g _m.     

Quantum Oscillations of Thermoelectric Effects in a Pseudo-one-dimensional Electron Gas With a Spin–Orbit Interaction

We consider thermoelectric effects in a pseudo-one-dimensional electron gas (P1DEG) with a spin–orbit interaction (SOI). The SOI splits the dispersion relation of the P1DEG into subbands with an energy gap. We find quantum oscillations in transport coefficients, which coincide with the locations of the subband edges, as a function of the electrochemical potential.     

Effect of Composition on Thermoelectric Properties in PbTe-Bi<Subscript>2</Subscript>Te<Subscript>3</Subscript> Composites

The solidification of alloys in the Bi₂Te₃-PbTe pseudobinary system at off- and near-eutectic compositions was investigated for their microstructure and thermoelectric properties. Dendritic and lamellar structures were clearly observed due to the phase separation and the existence of a metastable ternary phase. In this system, three phases with different compositions were observed: binary Bi₂Te₃, PbTe, and metastable PbBi₂Te₄. The Seebeck coefficient, electrical resistivity, and thermal conductivity of ternary alloys as well as binary compounds were measured. The phonon thermal conductivities of Pb-Bi-Te alloys were lower than those in binary PbTe and Bi₂Te₃, which could have resulted from the increased interfacial area between phases due to the existence of the metastable ternary phase and the resultant phase separation.     

Effect of Isothermal Aging and Thermal Cycling on Interfacial IMC Growth and Fracture Behavior of SnAgCu/Cu Joints

The growth behavior of interfacial intermetallic compounds (IMCs) of SnAgCu/Cu soldered joints was investigated during the reflow process, isothermal aging, and thermal cycling with a focus on the influence of these parameters on growth kinetics. The SnAgCu/Cu soldered joints were isothermally aged at 125°C, 150°C, and 175°C while the thermal cycling was performed within the temperature ranges from −25°C to 125°C and −40°C to 125°C. It was observed that a Cu₆Sn₅ layer formed, followed by rapid coarsening at the solder/Cu interface during reflowing. The grain size of the interfacial Cu₆Sn₅ was found to increase with aging time, and the morphology evolved from scallop-like to needle-like to rod-like and finally to particles. The rod-like Ag₃Sn phase was formed on the solder side in front of the previously formed Cu₆Sn₅ layer. However, when subject to an increase of the aging time, the Cu₃Sn phase was formed at the interface of the Cu₆Sn₅ layer and Cu substrate. The IMC growth rate increased with aging temperature for isothermally aged joints. During thermal cycling, the thickness of the IMC layer was found to increase with the number of thermal cycles, although the growth rate was slower than that for isothermal aging. The dwell time at the high-temperature end of the thermal cycles was found to significantly influence the growth rate of the IMCs. The growth of the IMCs, for both isothermal aging and thermal cycling, was found to be Arrhenius with aging temperature, and the corresponding diffusion factor and activation energy were obtained by data fitting. The tensile strength of the soldered joints decreased with increasing aging time. Consequently, the fracture site of the soldered joints migrated from the solder matrix to the interfacial Cu₆Sn₅ layer. Finally, the shear strength of the joints was found to decrease with both an increase in the number of thermal cycles and a decrease in the dwell temperature at the low end of the thermal cycle.     

Thermosonic bonding of lead-free solder with metal bump for flip-chip bonding

While extensive research on the lead-free solder has been conducted, the high melting temperature of the lead-free solder has detrimental effects on the packages. Thermosonic bonding between metal bumps and lead-free solder using the longitudinal ultrasonic is investigated through numerical analysis and experiments for low-temperature soldering. The results of numerical calculation and measured viscoelastic properties show that a substantial amount of heat is generated in the solder bump due to viscoelastic heating. When the Au bump is thermosonically bonded to the lead-free solder bump (Sn-3%Ag-0.5%Cu), the entire Au bump is dissolved rapidly into the solder within 1 sec, which is caused by the scrubbing action of the ultrasonic. More reliable solder joints are obtained using the Cu/Ni/Au bump, which can be applied to flip-chip bonding.     

Dielectric films for Si solar cell applications

Thin films of many dielectric materials have been used in the past for fabrication of solar cells and as a part of their device structure. However, current efforts to reduce solar cell costs in commercial production have led to simplification of cell design and fabrication. Use of self-aligning techniques has obviated the need for photolithography and conventional masking with dielectric films for cell fabrication. Currently, the most favored dielectric material in Si solar cell production is SiN:H, deposited by the plasma-enhanced chemical vapor deposition (PECVD) process. The SiN:H layer and its processing play multiple roles of serving as an antireflection coating, a surface passivating layer, a buffer layer through which metal is fired, and a means of transporting hydrogen into the bulk of the solar cell. In order to optimize the solar cell performance, the SiN:H layer must meet some conflicting demands. The various applications of the SiN:H layer in solar cell fabrication are described here.