Adaptive 2D finite element simulation of metal forming processes

The development and integration of available current methods and the development of new methods for an adaptive finite element analysis of metal forming processes are presented. The analysis includes large-strain, elastic–plastic, and thermal effects. Many numerical methods such as mesh generation, simulation of the contact between the workpiece and tool and die, and optimization of the finite element mesh are integrated and incorporated. In addition, an algorithm is developed which can detect certain severely distorted elements where the area of integration is approaching zero. The advantage of correcting these regions of locally distorted elements is demonstrated. These numerical methods are implemented in a finite element program developed for simulating metal forming processes, with the emphasis on automating the analysis. Examples include an axisymmetric stress simulation of a coldheading process, a plane strain simulation of an extrusion process and a plane strain simulation of orthogonal metal cutting, all with noticeable thermal effects. The orthogonal cutting forces and feed forces calculated are compared with two sets of experimental data, with good agreement.     

Implantable biomedical microsystems for neural prostheses.

In the following article, the technologies to fabricate polyimide-based thin and flexible substrates with monolithically integrated electrode arrays and printed circuit boards (PCB) for hybrid electronic assemblies as well as an assembling technique that connects bare electronic dice with flexible PCBs are presented. The concept of modular, flexible biomedical microsystems as neural prostheses is introduced in general and described in detail in three examples. A cuff electrode with integrated multiplexer circuitry and standard implantable cables represents the combination of microtechnology with precision mechanics; a sieve electrode used as an implant in peripheral nerve regeneration studies demonstrates the next level of integration density but still uses a cable connection; and last, joint effort to fabricate the demonstrator of a vision prosthesis that is completely implantable in the eye with a wireless link for energy supply and data transmission is presented. System design, hybrid assembling technology, and flexible multilayer encapsulation using parylene and silicone rubber are the key components for creating a new generation of neural prostheses for complex and challenging new applications.     

V. Yeast sequencing reports. Identification of a gene encoding a new Ypt/Rab-like monomeric G-protein in Saccharomyces cerevisiae

A Saccharomyces cerevisiae sequence cloned by serendipity was found to encode a protein that is a new member of the Ypt/Rab monomeric G-protein family. This sequence shows high homology to the yeast genes SEC4 and YPT1 and, like SEC4 and YPT1, is essential for viability. The sequence was localized to chromosome V based upon hybridization to pulse-field gel-separated yeast chromosomes. The sequence has been deposited in the GenBank data library under Accession Number L17070.     

B. F. Skinner: Au-delá de la controverse.

Discusses controversies surrounding the work of B. F. Skinner's influence on various theories of human and animal behavior. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

As number of patients grows, so do critical problems facing MDs who provide dialysis

The growth in the number of dialysis patients in Canada is causing a critical shortage of resources. The low transplantation rate and an increase in the number of patients, combined with insufficient funding to expand facilities, threatens access to the expensive but life-sustaining therapy. Michel Martin, who recently underwent a kidney transplant, looks at the situation facing dialysis patients in Quebec and Ontario.     

A PET study of the neural systems of stuttering

The cause of stuttering is unknown. Failure to develop left-hemispheric dominance for speech is a long-standing theory although others implicated the motor system more broadly, often postulating hyperactivity of the right (language nondominant) cerebral hemisphere. As knowledge of motor circuitry has advanced, theories of stuttering have become more anatomically specific, postulating hyperactivity of premotor cortex, either directly or through connectivity with the thalamus and basal ganglia. Alternative theories target the auditory and speech production systems. By contrasting stuttering with fluent speech using positron emission tomography combined with chorus reading to induce fluency, we found support for each of these hypotheses. Stuttering induced widespread overactivations of the motor system in both cerebrum and cerebellum, with right cerebral dominance. Stuttered reading lacked left-lateralized activations of the auditory system, which are thought to support the self-monitoring of speech, and selectively deactivated a frontal-temporal system implicated in speech production. Induced fluency decreased or eliminated the overactivity in most motor areas, and largely reversed the auditory-system underactivations and the deactivation of the speech production system. Thus stuttering is a disorder affecting the multiple neural systems used for speaking.     

Microwave cavity perturbation technique: Part I: Principles

This report reviews the analysis used to extract the complex conductivity of a compound from a microwave cavity perturbation measurement. We intend to present a generalized treatment valid for any spheroidally shaped sample of arbitrary conductivity which is placed at either the electric or magnetic field antinode of the cavity. To begin with, we establish the relationship between the measured parameters and the conductivity for a spherical sample. Next, we extend these results to the case of spheroids; and for the first time, we cover all different configurations that one can possibly use to study an arbitrary conducting sample inside a cavity: in particular, all possible orientations of the sample with respect to the applied field are solved.     

Surface leakage currents in SiN/sub x/ passivated AlGaN/GaN HFETs

A novel guarded surface leakage test structure is used to isolate the surface and bulk leakage contributions to gate current in AlGaN/GaN HFETs. Passivation with various recipes of SiN/sub x/ always resulted in the commonly observed increase in gate leakage, which was found to be dominated by bulk leakage through the AlGaN. However, high temperature deposited SiN/sub x/ recipes gave a 1-2 orders reduction in surface leakage, whereas low temperature deposition gave an increase. Gate lag measurements were found to correlate closely with the surface leakage component, giving direct evidence that the key device problem of current slump is associated with current flow at the AlGaN surface.