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31.
We present reverse bias current (dark current) characteristics of a two-dimensional monolithic pixel-type nuclear radiation detector array fabricated using metalorganic vapor-phase epitaxy (MOVPE)-grown thick CdTe epitaxial layers on Si substrate. The (14?×?8) pixel array was formed by cutting deep vertical trenches using a dicing saw, where each pixel possesses a p-CdTe/ n-CdTe/n +-Si heterojunction diode structure. The dark currents showed pixel-to-pixel variations when measured at higher applied biases exceeding 100?V. The dark current had a dependence on the pixel thickness, where pixels with lower CdTe thickness exhibited higher currents. Moreover, the temperature dependence of the dark current revealed that a deep level with activation energy of around 0.6?eV is responsible for the observed dark currents and their pixel-to-pixel variation. We discuss that the effective ratio of Te to Cd at the growth surface is a major factor that controls the thickness variation, and is also responsible for the formation of 0.6?eV deep levels.  相似文献   
32.
In this paper a simple, casting solution technique for the preparation of two‐dimensional (2D) arrays of very‐high molecular weight (MW) 1D‐Pc supramolecular inorganic polymers is described. The soluble fluoroaluminium tetra‐tert‐butylphthalocyanine (ttbPcAlF) is synthesized and characterized, which can be self‐assembled to form 2D arrays of very‐high‐MW 1D‐Pc supramolecular inorganic polymers. High‐resolution transmission electron microscopy (HRTEM) demonstrates that the 1D‐ttbPcAlF, having a cofacial ring spacing of ~0.36 nm and an interchain distance of ~1.7 nm, self‐assembles into 2D‐nanosheets (~140 nm in length, ~20 nm in width, and equivalent to MW of 3.2 × 105 g mol?1). The film cast from a 1,2‐dichloroethane (DCE) solution shows a minimum hole‐mobility of ~0.3 cm2 V?1 s?1 at room temperature by flash‐photolysis time‐resolved microwave conductivity (TRMC) measurements and a fairly high dark dc‐conductivity of ~1 × 10?3 S cm?1.  相似文献   
33.
Substantial improvements of the absolute photoluminescence quantum yield (QY) for surfactant‐free silicon nanocrystals (Si‐ncs) by atmospheric pressure microplasma 3‐dimensional surface engineering are reported. The effect of surface characteristics on carrier multiplication mechanisms is explored using transient induced absorption and photoluminescence QY. Surface engineering of Si‐ncs is demonstrated to lead to more than 120 times increase in the absolute QY (from 0.1% up to 12%) within an important spectral range of the solar emission (2.3–3 eV). The Si‐ncs QY is shown to be stable when Si‐ncs are stored in ethanol at ambient conditions for three months.  相似文献   
34.
The high residual stress in a resin-molded electronic package sometimes makes the electronic functions unstable. Therefore the residual stress in electronic packages, especially on the top surfaces of semiconductor chips, should be evaluated. The objective of this study is to present a simple method for evaluating residual stress in resin-molded semiconductor chips using a combination of experimental and numerical methods. The actual residual stress of the packaging process was measured by using test chips that included piezoresistive gauges. A linear thermoelastic finite element analysis was then carried out using a three-dimensional model. The finite element analysis was performed under a stress-free temperature determined by the temperature dependence of the residual stress, which was experimentally measured by using the piezoresistive test chips. The measured residual stress using the test chips agreed well with the results of the finite element analysis. It was therefore confirmed that the present evaluation method, combining experimental and numerical methods, is reliable and reasonable.  相似文献   
35.
36.
By multifilling with La, Ba, Ga, Ti, Yb, Ca, Al, and In, the dimensionless figure of merit ZT of filled skutterudites has been improved in this work. ZT reached 0.75 for p-type (La,Ba,Ga,Ti) x (Fe,Co)4Sb12 (x = 0.8 to 1.0) and 1.0 for n-type (Yb,Ca,Al,Ga,In) y (Co,Fe)4Sb12 (y = 0.7 to 0.9). After annealing at 873 K for 180 h, 300 h, 710 h, 1000 h, and 5000 h in vacuum, the Seebeck coefficient S and the electrical resistivity ρ of the samples increased while the thermal conductivity λ decreased with increasing annealing time. As a result, the ZT values of both p- and n-type skutterudites remained unchanged or were slightly improved, demonstrating the excellent thermal stability of these skutterudites.  相似文献   
37.
本文报导了通过爆发性膨胀增加猪毛溶解度的方法,从而使得保毛脱毛法所回收的猪毛能够得到更有效的利用。  相似文献   
38.
It has been shown in our previous studies that the geographical traffic nonuniformity considerably affects the performance of the low earth orbit satellite communications systems. In this paper, a new scheme for improving the throughput characteristics of these systems at nonuniform traffic distribution is proposed. In this method, some parts of the users under the satellite which is flying over the area with high traffic load are assigned to its neighbor satellites with lower transmitting power levels. It is shown that the method equalizes the traffic loads of the satellites to some degree and, hence, can improve the throughput characteristics of the system.  相似文献   
39.
To objectively evaluate the parenchymal echo pattern of cirrhotic liver and chronic hepatitis, the authors applied an image analyzing system (IAS) using a neural network. Autopsy specimens in a water tank (n=13) were used to examine the relationship between the diameter of the regenerative nodule and the coarse score (CS) calculated by IAS. CS was significantly correlated with the diameter of the regenerative nodule (p<0.0001, r=0.966). CS is considered to be useful for evaluating the coarseness of the parenchymal echo pattern  相似文献   
40.
We propose that a polarization-insensitive Mach-Zehnder interferometer (MZI) switch is useful for optical gate elements, especially if multiwavelength signals are input. This device has high-input-power saturation properties, which shows that both the operating voltage and the extinction ratio do not change when the optical input power reaches at least +18 dBm. A high extinction ratio of 30 dB was achieved in the wide-wavelength range of 20 nm. Moreover, the extinction ratio can be improved by up to 45 dB by using a cascaded configuration to decrease crosstalk. These results indicate the MZI gate switch is well suited to wavelength-division multiplexing (WDM) network components  相似文献   
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