Slc25a39 and Slc25a40 Expression in Mice with Bile Duct Ligation or Lipopolysaccharide Treatment

SLC25A39/40, involved in mitochondrial GSH (mGSH) import from the cytoplasm, is essential for protection against oxidative stress and mitochondrial dysfunction. We examined the effects of cholestasis, through bile duct ligation (BDL) and lipopolysaccharide (LPS)-induced inflammation in mice, on Slc25a39/40 expression. Additionally, we used human clear cell renal carcinoma (KMRC-1) cells to elucidate the mechanism of regulation of SLC25A39/40 expression in the kidneys after LPS treatment. BDL resulted in a decrease in Slc25a39 mRNA in the liver and a decrease in Slc25a39/40 mRNA and protein in the kidneys. Consequently, there was a significant decrease in mGSH levels in the kidneys of BDL mice compared with those in sham mice. LPS treatment resulted in increased Slc25a40 expression in the kidneys. In KMRC-1 cells, the combination treatment of LPS-RS or FPS-ZM1 with LPS suppressed the LPS-induced increase in SLC25A40, suggesting that SLC25A40 expression could be regulated by the signaling pathway via toll-like receptor 4 and the receptor for advanced glycation end products, respectively. Our findings contribute to understanding the role of mGSH in the maintenance of the mitochondrial redox state. To the best of our knowledge, this is the first study that demonstrates the changes in Slc25a39/40 expression in mice with cholestasis-associated renal injury and LPS-induced inflammation.     

Spectral hole burning and carrier-heating effect on the transientoptical nonlinearity of highly carrier-injected semiconductors

An improved density-matrix theory is developed that can treat both spectral hole burning and carrier heating self consistently. Various intraband and interband relaxation terms characterized by different relaxation times and quasi-equilibrium distributions are introduced into the density-matrix equations within a relaxation-time approximation. Conservation of total number and energy densities of carrier systems in each band is considered to determine the quasi-equilibrium distributions. Formalism is applied to the calculation of the transient optical nonlinearity of highly carrier-injected semiconductors. Spectral hole burning and carrier-heating effects on the spectral and temporal characteristics are then clarified. In particular, the significant four-wave-mixing effect due to carrier heating is pointed out. An experiment that can be used to directly prove the existence of the carrier-heating effects on gain nonlinearity is also proposed     

Domain–Specific High–Level Modeling and Synthesis for ATM Switch Prototyping

ATM switch, the core technology of an ATM networking system, is one of the major products in Fujitsu telecommunication business. However, current gate–level design methodology can no longer satisfy its stringent time–to–market requirement. It becomes necessary to exploit high–level methodology to specify and synthesize the design at an abstraction level higher than logic gates. This paper presents our prototyping experience on domain–specific high–level modeling and synthesis for Fujitsu ATM switch design. We propose a high–level design methodology using VHDL, where ATM switch architectural features are considered during behavior modeling, and a high–level synthesis compiler, MEBS, is prototyped to synthesize the behavior model down to a gate–level implementation. Since the specific ATM switch architecture is incorporated into both modeling and synthesis phases, a high–quality design is efficiently derived. The synthesis results shows that given the design constraints, the proposed high–level design methodology can produce a gate–level implementation by MEBS with about 15 percent area reduction in shorter design cycle when compared with manual design.     

Organic–Inorganic Nanohybrids as Novel Thermoelectric Materials: Hybrids of Polyaniline and Bismuth(III) Telluride Nanoparticles

Thermoelectric materials have received much attention recently from the viewpoint of global environmental issues and effective utilization of energy resources. Especially those effective at relatively low temperature, such as below 100°C, which are usually abandoned without use, have become noteworthy recently. From this point of view, organic thermoelectric materials are most attractive, because they could be prepared at low cost and applied in various locations due to their flexibility. We have investigated the thermoelectric properties of organic conducting polymers such as polyaniline, polypyrrole, and polyphenylenevinylene, and succeeded in increasing the thermoelectric performance by selecting dopants, stretching conducting films, etc. Recently we have focused on new systems of organic–inorganic hybrid thermoelectric materials. Herein we present the preparation of a novel system of hybrids of polyaniline and bismuth(III) telluride nanoparticles, starting from bismuth(III) chloride and tetrachlorotellurium by using polyvinylpyrrolidone as a protecting reagent, as well as their thermoelectric properties. The hybrids prepared by this particular method showed much higher thermoelectric performance than the starting organic conducting polymer.     

A multi-port D-R mutator using CCIIs with current followers

A multi-port D-R mutator with new current conveyors (CFCCIIs) as the four-port active element is proposed. Each CFCCII consists of a current follower added to a second-generation current conveyor (CCII). This proposed circuit is a simple configuration using CCIIs, CFCCIIs and grounded capacitances and is applied to higher order high-pass filters. This configuration can realize a superior transmission characteristic, inheriting the characteristic of the conventional LC filter. Since all the passive elements are grounded, the influence of parasitic elements of current conveyors can be reduced with this circuit configuration. As a result, this circuit is considered a suitable configuration for monolithic integration. Results obtained from the SPICE simulations show the realized filters have excellent performance and the circuit is effective.     

Design of low‐power all‐optical networks under the constraint of four‐wave mixing

In this paper, we propose a static lightpath establishment method to design low‐power all‐optical networks under the constraint of four‐wave mixing (FWM). Since the FWM causes nonlinear interchannel crosstalk, it degrades the communication quality of optical signals. The FWM crosstalk effect becomes strong in a fiber as the number of passing optical signals increases. Therefore, we should reduce the number of optical signals passing through the same fiber from the perspective of the FWM. Meanwhile, in order to enhance the power efficiency of optical amplifiers, which are deployed at each optical fiber, it is preferred that multiple optical signals are transmitted in the same fiber. In order to decrease the power consumption while keeping high communication quality, the proposed method statically selects routes, wavelengths, and fibers for each traffic demand, considering the FWM crosstalk effect and the usage efficiency of the optical amplifiers. We show the performance of the proposed method through numerical experiments.     

A Bit-Error Rate Measurement and Error Analysis of Wireline Data Transmission using Current Source Model for Single Event Effect under Irradiation Environment

A high-speed wireline interfaces, e.g. LVDS (Low Voltage Differential Signaling), are widely used in the aerospace field for powerful computing in artificial satellites and aircraft [19]. This paper describes Bit Error Rate (BER) prediction methodology for wireline data transmission under irradiation environment at the design stage of data transmitter, which is useful in proactively determining if the design circuit meets the BER criteria of the target system. Using a custom-designed LVDS transmitter (TX) to enhance latch-up immunity [42], the relationship between transistor size and BER has been analyzed with focusing on Single Event Effect (SEE) as a cause of the bit error. The measurement was executed under ⁸⁴Kr¹⁷⁺ exposure of 322.0 MeV at various flux condition from 1?×?10³ to 5?×?10⁵ count/cm²/sec using cyclotron facility. For the analysis of the bit error, circuit simulation by SPICE was utilized with expressing the irradiation environment by a current source model. The current source model represents a single event strike into the circuit at drain and substrate junctions in bulk MOSFETs. For the construction of the current source model, a charge collection was simulated at the single particle strike with the creation of 3D Technology CAD (TCAD) models for the MOS devices of bulk transistor process technology. The simulation result of the charge correction was converted to a simple time-domain equation, and the single-event current source model was produced using the equation. The single-event current source was applied to SPICE simulation at bias current related circuits in the LVDS transmitter, then simulation results are carefully verified whether the output data is disturbed enough to cause bit errors on wireline data transmission. By the simulation, sensitive MOSFETs have been specified and a sum of the gate area for these MOSFETs has 29% better correlation than the normal evaluation index (sum of the drain area) by comparison to the actual BER measurement. Through the precise revelation of the sensitive area by SPICE simulation using the current model, it became possible to estimate BER under irradiation environment at the pre-fabrication design stage.

     

Tailored Remote Photochromic Coloration of in situ Synthesized CdS Quantum Dot Loaded WO3 Films

CdS quantum dot (QD) loaded WO₃ films, fabricated by screen printing and short‐time chemical bath deposition (CBD) techniques, have been proven to have an efficient visible‐light‐driven photochromic response. One of the striking features of such a photochromic system is its remote photochromic characteristic. The photogenerated electrons in CdS are injected into WO₃ to cause the color change of WO₃, while CdS does not show any photochromism. Compared to bare WO₃ films, the spectral sensitivity of remote photochromism in the CdS QD loaded WO₃ films is red‐shifted. The onset wavelength for remote, the decoloration time for CdS QD loaded WO₃ films was found to be significantly shorter than that for bare WO₃ films, probably due to their different electron trapping processes. Bandgap excitation in bare WO₃ creates deeply trapped electrons in the bulk, whereas the electrons injected from the QDs are trapped at shallow surface states in the remote photochromic system. The successful tailoring of photochromic coloration employing a simple procedure would provide numerous opportunities for designing photo‐ and electrochromic materials with the optimal architecture and tunable properties.