2-Aminoethoxydiphenyl borate (2-APB) inhibits capacitative calcium entry independently of the function of inositol 1,4,5-trisphosphate receptors

Capacitative calcium entry (CCE), the mechanism that replenishes intracellular calcium stores after depletion, is essential to intracellular calcium signaling. CCE is mediated by the channels in the plasma membrane generally referred to as "store operated channels (SOCs)". However, the molecular identity of the SOCs has never been determined, and the mechanism of the activation of SOCs remains to be elucidated. Recent studies have demonstrated that 2-aminoethoxydiphenyl borate (2-APB), which has been found to be an antagonist of inositol 1,4,5-trisphosphate receptors (IP3Rs), inhibits CCE, suggesting that IP3Rs channel activity is essential to the generation of CCE. However, CCE has also been reported to occur normally in IP3R-deficient cells. In order to resolve this discrepancy, we investigated the effect of 2-APB on CCE in IP3Rs-deficient cells. In response to store depletion with thapsigargin or N,N,N',N'-tetrakis (2-pyridylmethyl) ethylene diamine (TPEN), CCE was generated in IP3Rs-deficient cells the same as in wild-type cells, however, 2-APB abolished CCE in IP3Rs-deficient cells, despite the fact that this cell line does not possess functional IP3Rs. We also examined the effect of 2-APB on several types of TRP Ca2+ channels, which exhibit properties similar to those of SOCs. 2-APB had a different inhibitory effect on spontaneous and thapsigargin-induced Ba2+ influx in cells that transiently expressed individual TRP subtypes. These results suggest that the channel activity of IP3Rs is not essential to the generation of CCE in this cell line and that 2-APB inhibits CCE independently of the function of IP3Rs.     

Strong Surface‐Termination Effect on Electroresistance in Ferroelectric Tunnel Junctions

Tunnel electroresistance in ferroelectric tunnel junctions (FTJs) has attracted considerable interest, because of a promising application to nonvolatile memories. Development of ferroelectric thin‐film devices requires atomic‐scale band‐structure engineering based on depolarization‐field effects at interfaces. By using FTJs consisting of ultrathin layers of the prototypical ferroelectric BaTiO₃, it is demonstrated that the surface termination of the ferroelectric in contact with a simple‐metal electrode critically affects properties of electroresistance. BaTiO₃ barrier‐layers with TiO₂ or BaO terminations show opposing relationships between the polarization direction and the resistance state. The resistance‐switching ratio in the junctions can be remarkably enhanced up to 10⁵% at room temperature, by artificially controlling the fraction of BaO termination. These results are explained in terms of the termination dependence of the depolarization field that is generated by a dead layer and imperfect charge screening. The findings on the mechanism of tunnel electroresistance should lead to performance improvements in the devices based on nanoscale ferroelectrics.     

Development of 170 GHz/500 kW gyrotron

A development of 170GHz/500kW level gyrotron was carried out as R&D work of ITER. The oscillation mode is TE_31,8. In a short pulse experiment, the maximum power of 750kW was achieved at 85kV/40A. The efficiency was 22%. In the depressed collector operation, 500kW/36%/50ms was obtained. The maximum efficiency of 40% was obtained at P_RF=470kW whereas the power decrease by the electron trapping was observed. Pulse extension was done up to 10s at P_RF=170kW with the depressed collector operation. The power was limited by the temperature increase of the output window.     

A 500-MHz 4-Mb CMOS pipeline-burst cache SRAM with point-to-pointnoise reduction coding I/O

A 32-b 500-MHz 4-1-1-1 operation 4-Mb pipeline burst cache SRAM has been developed. In order to achieve both high bandwidth operation and short latency operation, we developed the following technologies: 1) a prefetched pipeline-burst scheme with double late-write buffers, 2) gate size reduction and a bit-line equalization by source resetting, 3) point-to-point bidirectional coding I/O's to reduce bus noise and power consumption, and 4) a three-level metal 0.25-μm CMOS process technology with six transistor memory cells     

New conceptual three-phase current-fed soft switching pulse width modulation converter with switched capacitor type resonant dc link

This paper presents a novel prototype of three-phase current-fed PWM converter with a switched capacitor type resonant dc link snubber circuit, which can basically operate under a principle of zero current soft switching commutation. The optimum PWM pattern-based control scheme proposed by the authors is effectively applied for this active converter. In this paper, the steady-state operating principle of a new converter circuit treated here is described. The practical design procedure of this converter is discussed from a theoretical point of view. The feasible experiment to confirm zero current soft switching commutation of this converter is concretely implemented and evaluated herein.     

High-mobility ultrathin strained Ge MOSFETs on bulk and SOI with low band-to-band tunneling leakage: experiments

For the first time, the tradeoffs between higher mobility (smaller bandgap) channel and lower band-to-band tunneling (BTBT) leakage have been investigated. In particular, through detailed experiments and simulations, the transport and leakage in ultrathin (UT) strained germanium (Ge) MOSFETs on bulk and silicon-on-insulator (SOI) have been examined. In the case of strained Ge MOSFETs on bulk Si, the resulting optimal structure obtained was a UT low-defect 2-nm fully strained Ge epi channel on relaxed Si, with a 4-nm Si cap layer. The fabricated device shows very high mobility enhancements >3.5/spl times/ over bulk Si devices, 2/spl times/ mobility enhancement and >10/spl times/ BTBT reduction over 4-nm strained Ge, and surface channel 50% strained SiGe devices. Strained SiGe MOSFETs having UT (T/sub Ge/<3 nm) very high Ge fraction (/spl sim/ 80%) channel and Si cap (T/sub Si cap/<3 nm) have also been successfully fabricated on thin relaxed SOI substrates (T/sub SOI/=9 nm). The tradeoffs in obtaining a high-mobility (smaller bandgap) channel with low tunneling leakage on UT-SOI have been investigated in detail. The fabricated device shows very high mobility enhancements of >4/spl times/ over bulk Si devices, >2.5/spl times/ over strained silicon directly on insulator (SSDOI; strained to 20% relaxed SiGe) devices, and >1.5/spl times/ over 60% strained SiGe (on relaxed bulk Si) devices.     

Temporal-Talbot-effect-based preprocessing for pattern-effect reduction in all-optical clock recovery using a semiconductor-optical-amplifier-based fiber ring laser

We propose and experimentally demonstrate the temporal-Talbot-effect (TTE)-based preprocessing for the pattern-effect reduction in the all-optical clock recovery using a semiconductor-optical-amplifier (SOA)-based fiber ring laser (SOA-FRL). The TTE-based preprocessing successfully reduced the pattern effects of the recovered clock pulses, so that the 10-GHz clear optical clock pulses were recovered from a 10-Gbit/s return-to-zero on–off keying (RZ-OOK) pseudo-random bit sequence (PRBS) optical signal. “Peak variation” and “Pattern-dependent intensity noise (PDIN)” were proposed and were utilized as parameters to quantitatively evaluate the pattern effects, from which recovered clock pulses suffer, in the temporal domain and the frequency domain, respectively. Peak variation was reduced from 77.2% to 36.2%, and PDIN was improved from ?103 dBc/Hz to ?110 dBc/Hz with the aid of the TTE-based preprocessing. Furthermore, we examined the tolerance of the proposed technique by intentionally deviating the input signal’s bit-rate by ±190 Mbit/s (±2% of the bit-rate) from the optimum condition for the TTE. As compared with the PDIN value for the pulse train obtained by the direct injection of the non-processed signal into the SOA-FRL, the PDIN of the recovered clock pulses using the preprocessed signal indicated improvements over the entire measurement range of ±190 Mbit/s, which corresponds to the wavelength-dispersion deviation of ±56 ps/nm (±4% of the wavelength-dispersion applied to the input signal) from the optimum value.     

Detailed Analysis of Temperature Characteristics of an InGaP/InGaAs/Ge Triple-Junction Solar Cell

Temperature characteristics of an InGaP/InGaAs/Ge triple-junction solar cell were analyzed in detail using an equivalent circuit calculation. The current–voltage (I–V) characteristics of single-junction solar cells (InGaP, InGaAs, Ge solar cells) were measured at various temperatures. Fitting of I–V curves between measured and calculated data was carried out, and the diode parameters and temperature exponents of the single-junction solar cells were extracted. The parameters for each single-junction solar cell were used in the equivalent circuit model for the triple-junction solar cell, and calculations of solar cell performance were carried out. Measured and calculated results of the I–V characteristics at various temperatures agreed well.     

Optimizing the design of large-scale ground-coupled heat pump systems using groundwater and heat transport modeling

In order to predict the long-term performance of large-scale ground-coupled heat pump (GCHP) systems, it is necessary to take into consideration well-to-well interference, especially in the presence of groundwater flow. A mass and heat transport model was developed to simulate the behavior of this type of system in the Akita Plain, northern Japan. The model was used to investigate different operational schemes and to maximize the heat extraction rate from the GCHP system.     

Azimuthal wave number control of oscillatory thermocapillary convection in a liquid bridge

Thermocapillary convection in a half‐zone liquid bridge of high Prandtl number fluid is widely known to exhibit a three‐dimensional oscillatory flow after the onset of oscillation. The oscillatory flow presents ‘standing’ and ‘traveling’ flows depending upon the temperature difference between the top and bottom rods. In the oscillatory state, the flow shows a modal structure with an azimuthal wave number that depends on the aspect ratio of the liquid bridge and the intensity of the thermocapillarity expressed by the Marangoni number. The present study attempted to control the azimuthal wave number by heating the free surface locally with a prescribed frequency and intensity. The flow in the liquid bridge exhibited different modal structures depending on the heating conditions and a relationship between the frequency and the modal structure was obtained. © 2005 Wiley Periodicals, Inc. Heat Trans Asian Res, 34(7): 460–469, 2005; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/htj.20086