Deuterium trapping by irradiation damage in tungsten induced by different displacement processes

The deuterium trapping behaviors in tungsten damaged by light ions with lower energy (10 keV C⁺ and 3 keV He⁺) or a heavy ion with higher energy (2.8 MeV Fe²⁺) were compared by means of TDS to understand the effects of cascade collisions on deuterium retention in tungsten. By light ion irradiation, most of deuterium was trapped by vacancies, whose retention was almost saturated at the damage level of 0.2 dpa. For the heavy ion irradiation, the deuterium trapping by voids was found, indicating that cascade collisions by the heavy ion irradiation would create the voids in tungsten. Most of deuterium trapped by the voids was desorbed in higher temperature region compared to that trapped by vacancies. It was also found that deuterium could accumulate in the voids, resulting in the formation of blisters in tungsten.     

Investigations on welding residual stresses in penetration nozzles by means of 3D thermal elastic plastic FEM and experiment

Recent discoveries of stress corrosion cracking (SCC) in weldments including penetration nozzles at pressurized water reactors (PWRs) and boiling water reactors (BWRs) have raised concerns about safety and integrity of plant components. It is well known that welding residual stress is an important factor resulting in SCC in weldments. In the present work, both experimental method and numerical simulation technology are used to investigate the characteristics of welding residual stress distribution in penetration nozzles welded by multi-pass J-groove joint. An experimental mock-up is fabricated to measure welding residual stress at first. In the experiment, each weld pass is performed using a semi-circle balanced welding procedure. Then, a corresponding finite element models with considering moving heat source, deposition sequence, inter-pass temperature, temperature-dependent thermal and mechanical properties, strain hardening and annealing effect is developed to simulate welding temperature and residual stress fields. The simulation results predicted by the 3D model are generally in good agreement with the measurements. Meanwhile, to clarify the influence of deposition sequence on the welding residual stress, the welding residual stress field in the same geometrical model induced by a continuous welding procedure is also calculated. Finally, the influence of a joint oblique angle on welding residual stress is investigated numerically. The numerical results suggest that both deposition sequence and oblique angles have effect on welding residual stress distribution.     

Back‐channel‐etched thin‐film transistor using c‐axis‐aligned crystal In–Ga–Zn oxide

Our crystalline In–Ga–Zn oxide (IGZO) thin film has a c‐axis‐aligned crystal (CAAC) structure and maintains crystallinity even on an amorphous base layer. Although the crystal has c‐axis alignment, its a‐axis and b‐axis have random arrangement; moreover, a clear grain boundary is not observed. We fabricated a back‐channel‐etched thin‐film transistor (TFT) using the CAAC‐IGZO film. Using the CAAC‐IGZO film, more stable TFT characteristics, even with a short channel length, can be obtained, and the instability of the back channel, which is one of the biggest problems of IGZO TFTs, is solved. As a result, we improved the process of manufacturing back‐channel‐etched TFTs.     

Deep Phenotyping of Superficial Epidermolytic Ichthyosis due to a Recurrent Mutation in KRT2

Superficial epidermolytic ichthyosis (SEI) is an autosomal dominant inherited ichthyosis. SEI is caused by mutations in KRT2 and frequently shows erythroderma and widespread blistering at birth. We report the clinical manifestations of two patients from a Japanese family with SEI caused by a hotspot mutation, p.Glu487Lys, in KRT2. In addition, we summarize previous reports on SEI patients with the identical mutation. One of the two patients had disease onset at the age of 7 months. The other patient’s age of onset is unknown, but it was in childhood. Neither of the two patients showed erythroderma. To perform deep phenotyping, we studied the age of onset and the frequency of erythroderma in 34 reported SEI cases with the p.Glu487Lys mutation, including the present cases. Among the cases with sufficient clinical information, 44.4% of the cases that were due to p.Glu487Lys in KRT2 occurred at birth. Erythroderma was observed in 11.1% of the cases with p.Glu487Lys in KRT2.     

In vivo assessment of the corrosion of nickel–titanium orthodontic archwires by using scanning electron microscopy and atomic force microscopy

This study was undertaken to assess in vivo the corrosion in two commercial nickel–titanium (NiTi) orthodontic archwires removed from the oral cavity of patients using fluoride mouthwashes. Five volunteers took part in this study on the corrosion behavior of two brands of NiTi archwires (3M and AO (brand of archwire)) during use of two mouthwashes with neutral sodium fluoride 1.1%, one with acidulated fluoride 1.1%, and one with placebo and a control group. Each patient used one mouthwash in three different periods of time for 1 min a day for 30 days. The archwires were assessed with scanning electron microscopy and atomic force microscopy for qualitative and quantitative analysis. The values obtained with atomic force microscopy (AFM) were submitted to normality test, two‐way analysis of variance, and Tukey's test at a significance level of 5%. The AFM images showed a gradual qualitative increase in the roughness of both types of wire between the treatments: control < placebo < neutral fluoride < acidulated fluoride. The arithmetic average of the roughness and root mean square of the roughness were similar. As for 3M archwires, only the acidulated fluoride group differed statistically from the others. As for AO archwires, the control and placebo groups did not differ from each other, but differed from the other fluoride treatments. The group using neutral fluoride also differed significantly from the acidulated fluoride group. 3M archwires were not affected by daily oral challenges. AO archwires were not affected by daily oral challenges either; their association with fluoride, either neutral or acidulated, increased their roughness.     

Subharmonic synchronous and hybrid mode-locking of a monolithic DBR laser operating at millimeter-wave frequencies

A detailed comparison of subharmonic synchronous and subharmonic hybrid mode-locking of a monolithic distributed Bragg reflector (DBR) laser operating at 33 GHz is presented. Optical injection at the 20th subharmonic frequency (1.65 GHz) has produced a locking range of 10 MHz with negligible amplitude modulation. In comparison, electrical injection at the 4th subharmonic frequency (5.83 GHz) has shown higher levels of amplitude modulation and a narrower locking range (4 MHz). While subharmonic hybrid mode-locking remains a simple and cost effective solution for the generation of low timing jitter high-repetition rate optical pulse trains, subharmonic synchronous mode-locking shows superior performance with regard to reduced amplitude modulation and larger locking range.     

Synthesis of New Pb-Based 1222 Cuprates Containing Phosphorus, (Pb0.75P0.25)Sr2(RE2–x–y Ce x Sr y )Cu2O z (RE = Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb, and Y)

New Pb-based 1222 cuprates containing phosphorus have been synthesized in the (Pb_0.75P_0.25)Sr₂- (RE_2–x–y Ce _x Sr _y )Cu₂O _z (RE = Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb, and Y) systems. The almost-single phase samples are obtained for 0.5≤x≤1.0 and y=0.1 in the cases of RE = Nd, Dy, Ho, Er, Tm, Yb and Y, while for 0.3≤x≤1.0 and y=0.1 in the cases of RE = Sm, Eu and Gd. The samples crystallize in a tetragonal lattice, the lattice parameters a and c are decreasing with the decrease of the ionic radius of the RE element. Even after annealing under 143 atm O₂ atmosphere at 400 °C, almost all the samples with the common values x=0.5 and y=0.1 are semiconductors with a transport process followed by three-dimensional variable range hopping. However, the samples of RE = Sm, Eu and Gd, which are of almost single 1222 phase, even for x=0.3 and y=0.1, show superconductivity with the onsets at about 25 K, 20 K and 22 K, respectively. Through this study, we find very important procedure for discovery of new superconducting 1222 compound.