A 286 mm2 256 Mb DRAM with ×32 both-ends DQ

This paper describes a 256 Mb DRAM chip architecture which provides up to ×32 wide organization. In order to minimize the die size, three new techniques: an exchangeable hierarchical data line structure, an irregular sense amp layout, and a split address bus with local redrive scheme in the both-ends DQ were introduced. A chip has been developed based on the architecture with 0.25 μm CMOS technology. The chip measures 13.25 mm×21.55 mm, which is the smallest 256 Mb DRAM ever reported. A row address strobe (RAS) access time of 26 ns was obtained under 2.8 V power supply and 85°C. In addition, a 100 MHz×32 page mode operation, namely 400 M byte/s data rate, in the standard extended data output (EDO) cycle has been successfully demonstrated     

Osteoclastic features of multinucleated giant cells responding to synthetic hydroxyapatite implanted in rat jaw bone.

Multinucleated giant cells (MGCs) that responded to synthetic hydroxyapatite (HAP) implanted in rat mandibles were studied with electron microscopy. HAP used in this study sintered at 200 degrees C (HAP200) and at 125 degrees C (HAP1250) after the synthesis by a wet method. One to three weeks after the intraosseous implantation of HAP, MGCs responding to HAP200 had not only well-developed ruffled border and the clear zone but well-developed perinuclear Golgi complex, many mitochondria and vesicles in their cytoplasms. MGCs responding to HAP1250 had the clear zone, but not the ruffled border although they showed similar cytoplasmic features to those of MGCs responding to HAP200. They merely extended short slender cytoplasmic processes to HAP1250. These results suggest that although osteoclast-like MGCs respond to HAP implanted in the bone, the development of the ruffled border-clear zone system depends on physicochemical properties of HAP.     

An ESR study of the film formation steps of vapor deposition polymerization of polyamic acid

A film of polyamic acid is formed by vapor deposition polymerization of pyromellitic dianhydride (PMDA) and 4,4′-diaminodiphenyl ether (ODA). We have taken ESR spectrum during the polymerization process and compared it with the ESR spectrum of films obtained from solution polymerization. In the intermediate polymers during vapor deposition polymerization, the amide bond (? CONH? ) is coplanar with the benzene ring and two protons in the PMDA molecule. This intermediate polymer has one unpaired electron that interacts with the two nitrogen nuclei equally. On the other hand, in the polymer obtained by solution polymerization, the amide bond and the benzene ring of PMDA are not coplanar. In this polymer, too, some of the molecules have an unpaired electron that seems to have almost no coupling with NH groups. These results imply that the polymer formation via vapor deposition proceeds through different intermediates and different molecular configurations from that via the solution process.     

Fully methylated oriC with negative superhelicity forms an oriC-membrane complex before initiation of chromosome replication

In an in vitro assay, the oriC DNA has been shown to bind to the outer membrane fraction only when it is hemimethylated (G.B. Ogden et al., Cell, 54, 127-135,1988). In this report, however, we demonstrated that a significant amount of the oriC DNA was recovered from the cells just before initiation with the oriC DNA being fully methylated. Formation of this preinitiation oriC-membrane complex and following initiation of chromosome replication were strongly inhibited by novobiocin, a DNA gyrase B subunit inhibitor, which reduced the superhelicity of the reporter plasmid in the cells. On the other hand, both reactions proceeded in the presence of nalidixic acid, a DNA gyrase A subunit inhibitor, which did not have the effect of reducing the superhelicity. These results suggest that the negative superhelicity of the DNA is required for preinitiation oriC-membrane complex formation and following initiation event of replication.     

Metallized ultra-shallow-junction device technology for sub-0.1μm gate MOSFET's

This paper describes a new ultra-thin SOI-CMOS structure offering reduced parasitic diffusion-layer resistance. It addresses ways to deal with the ultra-shallow junctions required by sub-0.1 μm MOSFET's. Based on a CVD tungsten process we experimentally investigate the characteristics of selectively grown tungsten used in the source and drain region made in SOI layers of various thicknesses ranging from 10 to 100 nm. We also investigate certain CMOS device characteristics. The SOI-CMOS structure, with low parasitic diffusion-layer resistance and good contact characteristics for ultra-shallow junction devices exhibits superior device performance and high scalability     

TRVs and fault clearing stresses in extra-high-voltage radial networks

To cope with the high rate of increase of power demand in the main industrialized districts in Japan, 550-kV transmission systems covering the districts have been reinforced, with most of the main power plants connected directly to these systems. Through 550-/300-kV substations, the majority of power to the districts is supplied by 300-kV systems. To limit the excess short-circuit capacity in the 300-kV systems, they tend to be reconstructed as so-called radial networks. In radial networks with high short-circuit capacity and relatively small number of transmission lines connected to the substation busbars, the rate of rise of TRV can be far higher than standard value. This paper analyzes the transient recovery voltages (TRV) in such extra-high-voltage radial networks in Japan, together with the relevant stresses to circuit-breakers during fault clearings. Future system conditions have also been introduced. As the typical rate of rise of the TRV values, more than twice that of today's standard ones are probable.     

Robust stabilization of a magnetic suspension system using H∞ Control Theory

This paper presents the robust control design of a magnetic suspension system for a flexible beam which is a simplified model of an elastic rotor in a magnetic bearing system. To stabilize this magnetic suspension system which is unstable in nature, the H^infin; control theory is applied for a design of the control system. To apply the H^infin; control theory, a statespace model of an augmented plant with frequency-weighting functions is constructed. This augmented plant has two inputs which are the exogenous inputs and the control inputs, and two outputs which are the sensor outputs and the regulated outputs. Here we consider the mixed sensitivity problem. The H^infin; controller is implemented by a digital controller which is able to execute the computations very quickly. For the evaluation of the control performance, several experiments are made. The robustness of the closed-loop system is confirmed by the experimental results. The result of this study is useful for the control design of a magnetic bearing system.     

Stress intensity factors of microstructurally small crack

The stress intensity factor (SIF) is widely used for evaluating integrity of cracked components. Averaging the anisotropy of each crystal, the macroscopic behavior of polycrystalline materials is isotropic and homogenous in terms of elastic deformation. However, the anisotropic and/or inhomogeneous property influences on the stress field around a crack if the crack size is small in comparison with the grain. Thus, the SIF of the microstructurally small crack may differ from that in the isotropic body. In present study, the effect of anisotropic/inhomogeneous elasticity on the SIF is investigated by using the finite element analysis (FEA). At first, the SIFs of semi-circular crack in a single crystal and a polycrystalline material are calculated. These reveal that the magnitude of SIF is dependent not only on the crystal orientation but also on the deformation constraint by the neighboring crystals. Then, the statistical scatter of SIF due to the random orientation of crystal orientation in a polycrystal is examined by a Monte Carlo simulation.