A new approach to the diagnosis of solid insulation systems based on PD signal inference

The authors have developed digital instrumentation that can measure the amplitude, shape, phase, and number of pulses per cycle. Examples are given of results obtained from an induction motor, a hydrogenerator, a polymeric cable system with a defective joint, and a high-voltage current transformer.     

Radioactive Marker Measurements in Heterogeneous Reservoirs: Numerical Study

A numerical study is performed to simulate the vertical deformation of a depth interval representing a marker spacing (10.5 m) located in a deep heterogeneous sedimentary reservoir. Realistic lithostratigraphic sequences typical of the Northern Adriatic basin are used. A number of scenarios are addressed consistent with the available data. In particular two basic geologic scenarios at the marker scale are simulated, one where sands prevail within the marker spacing (SD), and another where thin sandy and clayey layers alternate (CL). The sensitivity of the marker response is investigated in relation to clay and sand permeability and compressibility contrast, Biot’s coefficient, and respective position of monitoring and fluid pumping wells. The modeling results show that rock may indeed expand above and below depleted layers. Depending on the marker position the expansion may partially offset the compaction, especially in the CL scenario with a very low permeable clay. To obtain a representative field compaction the markers should span a depth interval made mostly by sand and entirely depleted, and should be installed in a test hole far from producing wells. Compressibility contrast and the Biot coefficient play a secondary role. Very critical measurements are provided by two markers which incorporate a thin (≈1 m) depleted level overlain and underlain by almost impermeable clay layers.     

Development of smooth finishes in electrostatic fluidized bed (EFB) coating process of high-performance thermoplastic powders (PPA 571 H)

This paper deals with the analysis of the evolution of the surface morphology of metal substrates coated with high-performance thermoplastic powders, namely PPA 571 H, by using electrostatic fluidized bed (EFB) process. Attention has been particularly focused on the relationship between baking time and temperature of EFB coated substrates and the morphological characteristics of the resulting polymeric films.

First, thermal behaviour of PPA 571 H polymeric powders was characterized by using standard calorimetric techniques. Accordingly, PPA 571 H melting kinetic was experimentally deduced. Based upon experimental findings, predictive analytical model was also developed and employed to trace ‘iso-conversion’ curves out.

Second, metal substrates, made from low carbon steel (AISI 1040), were EFB coated and baked at several baking time and temperatures. Combined analyses of scanning electron and confocal microscopes were led to measure the evolution of the films surface morphology under different baking conditions. Accordingly, a relationship between film morphologies and melting degree was sought. Consistent trends of roughness parameters versus baking parameters were found, with smoother finishes of the polymeric films being achieved for higher degrees of melting, that is, for higher baking temperature and time. Full maps and related analytical models of the finishing levels according to baking parameters were also built up, hence providing first useful indications to powder coaters on how to best deal with their settings.     

Transceiver Front-End Technology for Software Radio Implementation of Wideband Satellite Communication Systems

The evolution of satellite communication systems for the design of both the satellite’s communication payload and the ground-station are towards the implementation of such systems using the Software Radio (SR) technology. This paper focuses on a key element of the SR, that is, the wideband front-end which still poses the greatest technological challenge for design and proliferation of SR. In particular, we look at the front-end architecture of wideband receivers, outline the key aspects of the design of such front-end systems, specify the performance metrics associated with their design, present an architecture of a promising wideband analog to digital converter, and finally present the results of our design, implementation, and test campaign of a prototype PC-based SR system. This revised version was published online in July 2006 with corrections to the Cover Date.     

Surface analyses of polycrystalline and Cz–Si wafers

The performance of photovoltaic devices is greatly influenced by the surface characteristics such as surface roughness and presence of organic contaminants; therefore, their measurement is of great importance for photovoltaic industry. Moreover, these parameters should be measured by non-contact, fast methods capable of application as in-line techniques in photovoltaic industry. Surface roughness measurements and detection of organic contaminants by work-function measurements are the subject of this contribution. Monocrystalline and multicrystalline silicon wafers have been analyzed by Scanning Kelvin Probe (SKP ) in order to obtain work-function maps. These presented regions of higher work-function values correspond to organic contaminants, which are deliberately deposited on the wafer surface. In this way we have demonstrated the capability of work-function measurements for the detection of the contaminants. Moreover, unintentional organic contamination has been detected on multicrystalline Si wafers by SKP analyses. At the same time, the surface roughness has been obtained from surface topography maps.     

Risk analysis of underground infrastructures in urban areas

The paper presents an integrated approach for vulnerability and resilience analysis for underground infrastructures, i.e. a societal risk analysis of the failures of underground services for an urban area. The approach is based on the detailed study of (1) domino-effects for the components of a single infrastructure and for a given set of infrastructures interoperated and/or belonging to the same area; (2) risk and vulnerability analysis of a given area; (3) identification of a set of intervention guidelines, in order to improve the overall system resilience. The use of an integrated (interoperability and area) approach, breaking down the analysis area extent into sub-areas and assessing the dependencies among sub-areas both in terms of interoperability and damage propagation of critical infrastructures, demonstrates a useful advantage in terms of resilience analysis, more consistent with the “zoned” nature of failures of the underground infrastructures. An applied case, describing the interoperability and damage propagation analysis with the evaluation of time-dependency for the infrastructures and targets and of different kinds of interventions of the underground infrastructures of a town, is presented for this purpose.     

One-step substrate nanofabrication and patterning of nanoparticles by lithographically controlled etching

We propose an integrated top-down and bottom-up approach to single-step nanofabrication of complex nanostructures made of different materials. The process, termed lithographically controlled etching (LCE), starts with a drop of an etching solution cast on the surface to be patterned. By placing a polymeric mold on the substrate, the stamp protrusions come into contact with the surface, thus protecting it, whereas the surface beneath the mold recesses is exposed to a thin layer of etching solution, allowing the surface to be etched. By dispersing nanoparticles into the etching solution, these can be deposited and self-organize in the recesses on the substrate as these are excavated. We demonstrate here the fabrication of complex structures and nanowires 30 nm wide. Moreover, by exploiting capillary forces, it is possible to deposit nanoparticles at precise positions with respect to optically addressable microstructures, thus realizing a multiscale functional pattern.     

Characterization of Pt/AlN/Pt-based structures for high temperature, microwave electroacoustic devices applications

Highly c-axis oriented AlN films, 3.15 μm thick, were grown by rf reactive sputtering technique at 200 °C on bare and Pt-covered Si(100) substrates previously oxidized to a thickness of about 2 μm in wet oxygen atmosphere. A Pt film, 2200 Å thick, was then sputtered on the free surface of the AlN/Pt/SiO₂/Si multilayer at 200 °C without breaking the vacuum in order to avoid any oxidation effects of the layers. The multilayers were then annealed in air at 900 °C for different time lengths up to 32 h in order to test the materials' resistivity to harsh environment. The influence of this high temperature annealing (HTA) on the thin films' crystallinity, as well as on the c-AlN piezoelectricity and Pt sheet resistivity was investigated at room temperature before and after each annealing. X ray diffraction investigations revealed that the films' crystallinity was improved by the HTA: the full width of half maximum of the AlN(002) and Pt(111) peaks decreases from 0.39° to 0.24°, and from 0.42° to 0.28° after 32-hours-HTA. Scanning electron microscopy, four points probe and piezoelectricity tests revealed that the morphology and the sheet resistivity (in the range from 0.6 to 0.5 Ω/sq) of the outer Pt film, as well as the AlN piezoelectric constants d₃₃ (in the range from 6.2 to 7.4⋅10⁻¹² C/N) was quite unaffected by the HTA even after 32 h of annealing.     

Characterization and analysis of trap-related effects in AlGaN–GaN HEMTs

Traps are characterized in AlGaN–GaN HEMTs by means of DLTS techniques and the associated charge/discharge behavior is interpreted with the aid of numerical device simulations. Under specific bias conditions, buffer traps can produce “false” surface-trap signals, i.e. the same type of current-mode DLTS (I-DLTS) or ICTS signals that are generally attributed to surface traps. Clarifying this aspect is important for both reliability testing and device optimization, as it can lead to erroneous identification of the degradation mechanism, thus resulting in wrong correction actions on the technological process.