Impedance characteristics of double-hetero structure laser diodes

The effects of the onset of lasing on the I-V characteristics, the impedance characteristics and the light modulation characteristics of laser diodes have been discussed by introducing the rate equations which involve carrier diffusion process in the active layer interacting with the radiation field intensity. The static I-V characteristics exhibit a kink at lasing threshold current, reflecting the decrease of effective lifetime of carriers. Effective carrier lifetimes decrease with increasing light intensity, which results in a steep attenuation of injected carrier density in the active region. The impedance and light modulation characteristics are obtained in the small signal approximation. The small signal light modulation characteristics depend strongly on whether the laser diode is excited by the constant current modulation or the constant voltage modulation. The impedance is changed drastically by the onset of lasing and exhibits a resonance which coincides exactly with the optical modulation resonance frequency.     

Recombination lifetime in a semiconductor laser diode

The effect of minority carrier lifetime on the impedance of the laser within a diffusion or a drift length from the junction is analyzed. Lifetime shorting due to stimulated recombination (which is a function of the injection current) is considered and the effect of cavity size on the ability to modulate the laser at high frequencies is pointed out.     

Avalanche induced dispersion in IMPATT diodes

Numerical analysis has been performed on the effect of the carrier dispersion caused by avalanching on the small signal admittance and the transient step response in the avalanche region of an idealized IMPATT diode having a uniform electric field profile. The degree of dispersion, referred to hereafter as Avalanche Induced Dispersion (AID), depends on the relative magnitudes of ionization rates of the two carriers. AID becomes largest when the two ionization rates are equal and decreases with increasing discrepancy between them.It is found that the build-up of an avalanche can be faster if either electrons or holes are strongly ionizing than when both of them ionize equally. Also, the small signal negative conductance is minimum when the dispersion is most pronounced. Since the time delay in the avalanche build-up depends strongly on AID, the upper limit of the high-frequency performance of IMPATT diodes can be estimated from the theoretical value of AID.     

Grafting of branched polymers onto nano-sized silica surface: Postgrafting of polymers with pendant isocyanate groups of polymer chain grafted onto nano-sized silica surface

To control the surface wettability of nano-sized silica surface, the postgrafting of hydrophilic and hydrophobic polymers to grafted polymer chains on the surface was investigated. Polymers having blocked isocyanate groups were successfully grafted onto nano-sized silica surface by the graft copolymerization of methyl methacrylate (MMA) with 2-(O-[1′-methylpropylideneamino]caboxyamino)ethyl methacrylate (MOIB) initiated by azo groups previously introduced onto the surface. The blocked isocyanate groups of poly(MMA-co-MOIB)-grafted silica were stable in a desiccator, but isocyanate groups were readily regenerated by heating at 150 °C. The hydrophilic polymers, such as poly(ethylene glycol) (PEG) and poly(ethyleneimine) (PEI), were postgrafted onto the poly(MMA-co-MOIB)-grafted silica by the reaction of functional groups of PEG and PEI with pendant isocyanate groups of poly(MMA-co-MOI)-grafted silica to give branched polymer-grafted silica. The percentage of grafting increased with increasing molecular weight of PEG, but the number of postgrafted chain decreased, because of steric hindrance. The hydrophobic polymers, such as poly(dimethylsiloxane) were also postgrafted onto poly(MMA-co-MOI)-grafted silica. It was found that the grafting of hydrophobic polymer and the postgrafting of hydrophilic polymer branches readily controls the wettability of silica surface to water.     

The YXXL sequences of a transmembrane protein of bovine leukemia virus are required for viral entry and incorporation of viral envelope protein into virions

The cytoplasmic domain of an envelope transmembrane glycoprotein (gp30) of bovine leukemia virus (BLV) has two overlapping copies of the (YXXL)2 motif. The N-terminal motif has been implicated in in vitro signal transduction pathways from the external to the intracellular compartment and is also involved in infection and maintenance of high viral loads in sheep that have been experimentally infected with BLV. To determine the role of YXXL sequences in the replication of BLV in vitro, we changed the tyrosine or leucine residues of the N-terminal motif in an infectious molecular clone of BLV, pBLV-IF, to alanine to produce mutated proviruses designated Y487A, L490A, Y498A, L501A, and Y487/498A. Transient transfection of African green monkey kidney COS-1 cells with proviral DNAs that encoded wild-type and mutant sequences revealed that all of the mutated proviral DNAs synthesized mature envelope proteins and released virus particles into the growth medium. However, serial passages of fetal lamb kidney (FLK) cells, which are sensitive to infection with BLV, after transient transfection revealed that mutation of a second tyrosine residue in the N-terminal motif completely prevented the propagation of the virus. Similarly, Y498A and Y487/498A mutant BLV that was produced by the stably transfected COS-1 cells exhibited significantly reduced levels of cell-free virion-mediated transmission. Analysis of the protein compositions of mutant viruses demonstrated that lower levels of envelope protein were incorporated by two of the mutant virions than by wild-type and other mutant virions. Furthermore, a mutation of a second tyrosine residue decreased the specific binding of BLV particles to FLK cells and the capacity for viral penetration. Our data indicate that the YXXL sequences play critical roles in both viral entry and the incorporation of viral envelope protein into the virion during the life cycle of BLV.     

Controlling Ion‐Transport Selectivity in Gold Nanotubule Membranes

We have developed a new class of synthetic membranes that consist of a porous polymeric support. This support contains an ensemble of gold nanotubules that span the complete thickness of the support membrane. The support is a commercially available microporous polycarbonate filter with cylindrical nanoscopic pores. The gold nanotubules are prepared via electroless deposition of Au onto the pore walls, and tubules that have inside diameters of molecular dimensions (<1 nm) can be prepared. Hence, these membranes are a new class of molecular sieves. We review in this paper the ion‐transport properties of these Au nanotubule membranes. We will show that these membranes can be cation‐permselective or anion‐permselective, and that the permselectivity can be reversibly switched between these two states. Ion permselectivity can be introduced by two different routes. The first entails chemisorption of an ionizable thiol, e.g., a carboxylated or ammonium‐containing thiol to the Au tubule walls. If the thiol contains both of these functionalities (e.g., the amino acid cysteine), the permselectivity can be reversibly switched by varying the pH of the contacting solution phase. Ion permselectivity can also be introduced by potentiostatically charging the membrane in an electrolyte solution. By applying excess negative charge, cation permselective membranes are obtained, and excess positive charge yields anion permselective membranes. In this case the permselectivity can be reversibly switched by changing the potential applied to the membrane.     

Monomolecular layer epitaxy of GaAs for ideal static induction transistor

An ideal static induction transistor (ISIT) structure was fabricated using molecular layer epitaxy (MLE). The doping method of MLE enabled us to achieve a sufficiently high level of doping for ISIT fabrication. In the fabrication process a low growth temperature was very important for the device structure, which requires very sharp dopant profiles. For the ISIT, two MLE processes, namely source–drain growth and gate regrowth, were required. The electrical characteristics of the source–drain were changed after heat treatment at a temperature higher than 480°C. The effect of the redistribution of dopants of the source–drain structure (n⁺⁺–i–p⁺⁺–i–n⁺) during gate regrowth was clearly shown by SIMS (secondary ion mass spectroscopy) measurements for various temperatures of heat treatment. As a result the doped Se diffused from the n⁺⁺ source region to the other layers and the doped Zn diffused from the p⁺⁺ layer to the i-layers. The source was a heavily Se-doped layer at the doping level of (2–3)×10¹⁹ cm⁻³ containing a larger amount of interstitial Se atoms in the lattice. The redistribution of Se from the heavily doped region was detectable even after heat treatment at 480°C for 30 min. For the p⁺⁺ layer the profile of the C-doped layer was stable even after heat treatment at 620°C for 30 min, but the profile of Zn changed markedly after heat treatment at 480°C for 30 min. In addition, the carbon-doped p⁺⁺ layer acted as a gettering layer for diffused interstitial Se from the source region. The driving force of the redistribution of dopants results in the electric field in the device structures. © 1997 John Wiley & Sons, Ltd.     

Low-temperature synthesis in vacuum of c-axis oriented ferroelectric YMnO3 thin films using alkoxy-derived precursors

Abstract

Hexagonal YMnO₃ thin films were prepared on Pt(111)/TiO_x/SiO₂/Si and Pt(111)/Al₂O₃(0001) substrates using alkoxy-derived precursor solutions. The films were prepared by spin coating the YMnO₃ precursor solutions and then, the films were calcined and crystallized via rapid thermal annealing in oxygen or vacuum ambient. The annealing conditions and substrates were critical for crystallization of ferroelectric YMnO₃ films. When annealed in vacuum, the films both on Pt(111)/TiO_x/SiO₂/Si and Pt(111)/Al₂O₃(0001) substrates crystallized to hexagonal YMnO₃ and the orientation depended on the substrates. The film on Pt(111)/Al₂O₃(0001) had c-axis orientation and the film on Pt(111)/TiO_x/SiO₂/Si had no preferred orientation. In addition, it was found that crystallization behavior, orientation and morphology of YMnO₃ films on Pt(111)/TiO_x/SiO₂/Si substrates depended on the annealing condition. The heat-treatment in vacuum at initial stage for crystallization affected the restraint of perovskite phase and formation of hexagonal phase. The following heat-treatment in oxygen promoted the c-axis orientation and grain growth. The optimum annealing procedure for crystallization of the c-axis oriented YMnO₃ films on Pt(111)/TiO_x/SiO₂/Si was addressed.