Scalar network analysers operating at Ka- and W-bands

Scalar network analysers measuring the amplitude of the reflection/transmission coefficients of waveguide structures have been realised at Ka- and W-bands. Their accuracy derived by using standard mismatches is excellent at Ka- band and fairly good at W-band. To our knowledge this is the first instance where the accuracy of measurements obtained from a scalar network analyser was checked over full waveguide bands with the aid of standard mismatches. The reported reflectometers are precursors of vector network analysers based on six-port reflectometers. Methods aimed at increasing the signal-to-noise ratio (SNR) of the measurements have been developed, while proposals for improving the dynamic range of these network analysers are put forward.     

Au@Hg Nanoalloy Formation Through Direct Amalgamation: Structural,Spectroscopic, and Computational Evidence for Slow Nanoscale Diffusion

Dynamic core–shell nanoparticles have received increasing attention in recent years. This paper presents a detailed study of Au–Hg nanoalloys, whose composing elements show a large difference in cohesive energy. A simple method to prepare Au@Hg particles with precise control over the composition up to 15 atom% mercury is introduced, based on reacting a citrate stabilized gold sol with elemental mercury. Transmission electron microscopy shows an increase of particle size with increasing mercury content and, together with X‐ray powder diffraction, points towards the presence of a core–shell structure with a gold core surrounded by an Au–Hg solid solution layer. The amalgamation process is described by pseudo‐zero‐order reaction kinetics, which indicates slow dissolution of mercury in water as the rate determining step, followed by fast scavenging by nanoparticles in solution. Once adsorbed at the surface, slow diffusion of Hg into the particle lattice occurs, to a depth of ca. 3 nm, independent of Hg concentration. Discrete dipole approximation calculations relate the UV–vis spectra to the microscopic details of the nanoalloy structure. Segregation energies and metal distribution in the nanoalloys were modeled by density functional theory calculations. The results indicate slow metal interdiffusion at the nanoscale, which has important implications for synthetic methods aimed at core–shell particles.     

Tin naphthalocyanine complexes for infrared absorption in organic photovoltaic cells

In this work, we examine the optical properties of tin naphthalocyanine dichloride (SnNcCl₂), and its performance as an electron donor material in organic photovoltaic cells (OPVs). As an active material, SnNcCl₂ is attractive for its narrow energy gap which facilitates optical absorption past a wavelength of λ = 1100 nm. We demonstrate a power conversion efficiency of η_P = (1.2 ± 0.1)% under simulated AM1.5G solar illumination at 100 mW/cm² using the electron donor–acceptor pairing of SnNcCl₂ and C₆₀ in a bilayer device architecture. While some phthalocyanines have been previously used to improve infrared absorption, this is often realized through the formation of molecular dimers. In SnNcCl₂, the infrared absorption is intrinsic to the molecule, arising as a result of the extended conjugation. Consequently, it is expected that SnNcCl₂ could be utilized in bulk heterojunction OPVs without sacrificing infrared absorption.     

Physical layer orthogonal frequency‐division multiplexing acquisition and timing synchronization security

Orthogonal frequency‐division multiplexing (OFDM) has become the manifest modulation choice for 4G standards. Timing acquisition and carrier frequency offset synchronization are prerequisite to OFDM demodulation and must be performed often. Most of the OFDM methods for synchronization were not designed with security in mind. In particular, we analyze the performance of a maximum likelihood synchronization estimator against highly correlated jamming attacks. We present a series of attacks against OFDM timing acquisition: preamble whitening, the false preamble attack, preamble warping, and preamble nulling.The performance of OFDM synchronization turns out to be very poor against these attacks, and a number of mitigation strategies and security improvements are discussed. Copyright © 2014 John Wiley & Sons, Ltd.     

A New Family of Ultralow Loss Reversible Phase‐Change Materials for Photonic Integrated Circuits: Sb2S3 and Sb2Se3

Phase‐change materials (PCMs) are seeing tremendous interest for their use in reconfigurable photonic devices; however, the most common PCMs exhibit a large absorption loss in one or both states. Here, Sb₂S₃ and Sb₂Se₃ are demonstrated as a class of low loss, reversible alternatives to the standard commercially available chalcogenide PCMs. A contrast of refractive index of Δn = 0.60 for Sb₂S₃ and Δn = 0.77 for Sb₂Se₃ is reported, while maintaining very low losses (k < 10^?5) in the telecommunications C‐band at 1550 nm. With a stronger absorption in the visible spectrum, Sb₂Se₃ allows for reversible optical switching using conventional visible wavelength lasers. Here, a stable switching endurance of better than 4000 cycles is demonstrated. To deal with the essentially zero intrinsic absorption losses, a new figure of merit (FOM) is introduced taking into account the measured waveguide losses when integrating these materials onto a standard silicon photonics platform. The FOM of 29 rad phase shift per dB of loss for Sb₂Se₃ outperforms Ge₂Sb₂Te₅ by two orders of magnitude and paves the way for on‐chip programmable phase control. These truly low‐loss switchable materials open up new directions in programmable integrated photonic circuits, switchable metasurfaces, and nanophotonic devices.     

Origin of High Ionic Conductivity of Sc-Doped Sodium-Rich NASICON Solid-State Electrolytes

Substitution of liquid electrolyte with solid-state electrolytes (SSEs) has emerged as a very urgent and challenging research area of rechargeable batteries. NASICON (Na₃Zr₂Si₂PO₁₂) is one of the most potential SSEs for Na-ion batteries due to its high ionic conductivity and low thermal expansion. It is proven that the ionic conductivity of NASICON can be improved to 10⁻³ S cm⁻¹ by Sc-doping, of which the mechanism, however, has not been fully understood. Herein, a series of Na_3+xSc_xZr_2−xSi₂PO₁₂ (0 ≤ x  ≤  0.5) SSEs are prepared. To gain a deep insight into the ion transportation mechanism, synchrotron-based X-ray absorption spectroscopy (XAS) is employed to characterize the electronic structure, and solid-state nuclear magnetic resonance (SS-NMR) is used to analyze the dynamics. In this study, Sc is successfully doped into Na₃Zr₂Si₂PO₁₂ to substitute Zr atoms. The redistribution of sodium ions at certain specific sites is proven to be critical for sodium ion movement. For x ≤ 0.3, the promotion of sodium ion movement is attributed to sodium ion concentration increase at the Na2 sites and decrease at the Na1 and Na3 sites. For x > 0.3, the inhibition of sodium ion movement is due to the phase change from monoclinic to rhombohedral and an increasing impurity content.     

Engineered Elastomer Substrates for Guided Assembly of Complex 3D Mesostructures by Spatially Nonuniform Compressive Buckling

Approaches capable of creating 3D mesostructures in advanced materials (device‐grade semiconductors, electroactive polymers, etc.) are of increasing interest in modern materials research. A versatile set of approaches exploits transformation of planar precursors into 3D architectures through the action of compressive forces associated with release of prestrain in a supporting elastomer substrate. Although a diverse set of 3D structures can be realized in nearly any class of material in this way, all previously reported demonstrations lack the ability to vary the degree of compression imparted to different regions of the 2D precursor, thus constraining the diversity of 3D geometries. This paper presents a set of ideas in materials and mechanics in which elastomeric substrates with engineered distributions of thickness yield desired strain distributions for targeted control over resultant 3D mesostructures geometries. This approach is compatible with a broad range of advanced functional materials from device‐grade semiconductors to commercially available thin films, over length scales from tens of micrometers to several millimeters. A wide range of 3D structures can be produced in this way, some of which have direct relevance to applications in tunable optics and stretchable electronics.     

Subnanometer Analysis and Modeling of MBE Grown InP Based MODFETs

InGaAs/InAlAs double-doped double-strained modulation-doped field-effect transistors OD-SMODFETs)1 were grown by solid source molecular beam epitaxy. The structures were characterized using high resolution x-ray diffraction, Hall effect, and cross-sectional scanning tunneling microscopy. A record two-dimensional electron gas (2DEG) sheet density of 8.5 × 10¹²/cm² and 8.1 × 10¹²/cm² for 300 and 77K, respectively, was achieved. The mobility was 6500 and 12000 cm²/ Vs for 300 and 77K, respectively. To the author’s knowledge,² the previous record 2DEG result was 6.58 × 10¹²/cm². The electron mobility was limited by alloy scattering and interface roughness caused by the presence of “clustering.” Using cross-sectional scanning tunneling microscopy to verify the presence of these clusters, we have the first images of the lattice matched InAlAs (spacer)-InGaAs (quantum well) interface. These images reveal clusters that have approximate spherical or cylindrical shapes with equivalent cubic dimensions ranging from 25 to 45Å.     

Distributed detection of replica node attacks with group deployment knowledge in wireless sensor networks

Several protocols have been proposed to mitigate the threat against wireless sensor networks due to an attacker finding vulnerable nodes, compromising them, and using these nodes to eavesdrop or undermine the operation of the network. A more dangerous threat that has received less attention, however, is that of replica node attacks, in which the attacker compromises a node, extracts its keying materials, and produces a large number of replicas to be spread throughout the network. Such attack enables the attacker to leverage the compromise of a single node to create widespread effects on the network. To defend against these attacks, we propose distributed detection schemes to identify and revoke replicas. Our schemes are based on the assumption that nodes are deployed in groups, which is realistic for many deployment scenarios. By taking advantage of group deployment knowledge, the proposed schemes perform replica detection in a distributed, efficient, and secure manner. Through analysis and simulation experiments, we show that our schemes achieve effective and robust replica detection capability with substantially lower communication, computational, and storage overheads than prior work in the literature.