ATM技术浅析

网络通信技术正在迅猛地发展，各种各样的高速通信技术如雨后春笋，其中ＡＴＭ作为一种信元换技术，具有以兆或千兆级速率传送话音、数据和图象的能力，它在网络通信技术中占有特别重要的地位。本文介绍了ＡＴＭ技术的产生、基本特点、体系结构、在ＢＩＳＤＮ中的作用、存在的问题以及发展前景。     

双相位编码在数据通信中的应用

双相位码是数据串行通信和记录中使用的一种编码方法。在集散控制系统中使用的磁带机和飞行数据记录器中得到广泛应用。本文主要介绍双相位码的编码、译码原理及双相位码的特点;重点论述双相位码的编码和译码过程在微机上的实现。工程实践和实验表明,用微机实现双相位码的编码和译码过程是切实可行的。试用在TDC-2000集散控制系统中获得了圆满成功。     

改善减一线和减二线间的分离效果是增产裂解料的有效途径

根据燕化炼油厂1995年裂解料生产实际，借助Aspen Plus流程模拟软件，侧重模拟分析了减一线油利用上存在的问题，提出减一线和减二线的分离效果差是目前制约裂解料增产和炼厂经济效益的重要原因。通过对减压塔减一至减二段实施改造，可以使减一线直接产出较好的裂解料，而且减一线收率会有明显增加。     

Continuously chirped DFB gratings by specially bent waveguides fortunable lasers

We have implemented and studied a new type of tunable multiple-section semiconductor distributed feedback (DFB) laser using tailored chirped DFB gratings. Arbitrarily and continuously chirped DFB gratings are defined by bent waveguides on homogeneous grating fields with ultrahigh spatial precision. The mathematical bending functions are optimized in this case to provide enlarged wavelength tuning ranges. We present the results of model calculations, the technological device realization and experimental results of the DFB laser characterization e.g. a tuning range of 5.5 nm without wavelength gaps and high side mode suppression ratio     

In-chain functionalization by alternating anionic copolymerization of styrene and 1-(4-dimethylaminophenyl)-1-phenylethylene

Anionic copolymerizations of styrene (M₁) with excess 1-(4-dimethyl-aminophenyl)-1-phenylethylene (M₂) were conducted in benzene at 25°C for 24h, using sec-butyllithium as initiator. Narrow molecular weight distribution copolymers with M?;_n = 16.1 × 10³ g/mol (M?_w/M?_n = 1.04) and 38.2 × 10³g/mol (M?_w/M?_n = 1.05), and 24 and 38 moles of M₂ per macromolecule, respectively, were characterized by size exclusion chromatography, ¹H NMR spectroscopy and DSC. The monomer reactivity ratio, r₁ = 5.6, was obtained from the copolymer composition at complete consumption of M₁, assuming that the rate constant k₂₂ =0,i.e. r₂ =0. The polymers exhibited T_g values of 128 and 119°C, respectively, which correspond to an estimated T_g = 217°C for the hypothetical homopolymer of M₂.     

含能材料分子结构与感度的相关性

综述了国外近年来含能材料分子结构参数与感度相关关系的最新研究成果。研究表明：某些芳香族硝基化合物的撞击感度与Ｃ－ＮＯ２键强度有关；硝胺及脂肪族硝基化合物的冲击波感度与分子中Ｎ－ＮＯ２键的数目，长度和分子量相关。     

淀积条件对GDa—SiNx薄膜电学特性的影响

本文讨论了用辉光放电法制备氮化硅薄膜时衬底温度、射频功率和气体流量比对薄膜的电导率、介电常数和击穿强度的影响。通过优化生长条件，制备了优质非晶氮化硅薄膜，其介电常数为７．５、击穿强度为５．５ＭＶ／ｃｍ、电导率为１０－１３（Ωｃｍ）－１。