Frequency range extension of actively mode-locked lasers integratedwith electroabsorption modulators using chirped gratings

We have fabricated actively mode-locked lasers integrated with electroabsorption modulators and chirped gratings. A chirped grating with a large chirp rate of 1.45 Å/μm can be realized by using multiphase-shifted patterns. Short pulses of 4-6 ps were generated over a wide frequency range from 18.9-19.8 GHz. We observed jumps in the wavelength during detuning. These jumps arise from multiple lobes in the reflectivity spectrum. It is found that the wavelength jumps cause increases in the intensity noise. We showed that by reducing the grating length from 150 to 100 μm the sidelobes were suppressed and the detuning frequency range of over 1% could be realized. A smaller pulsewidth was obtained for the negatively-chirped gratings when compared to the positively chirped gratings     

Comprehensive Analysis of Oligo/Polysialylglycoconjugates in Cancer Cell Lines

In cancer cells, cell-surface sialylation is altered, including a change in oligo/polysialic acid (oligo/polySia) structures. Since they are unique and rarely expressed in normal cells, oligo/polySia structures may serve as promising novel biomarkers and targets for therapies. For the diagnosis and treatment of the disease, a precise understanding of the oligo/polySia structures in cancer cells is necessary. In this study, flow cytometric analysis and gene expression datasets were obtained from sixteen different cancer cell lines. These datasets demonstrated the ability to predict glycan structures and their sialylation status. Our results also revealed that sialylation patterns are unique to each cancer cell line. Thus, we can suggest promising combinations of antibody and cancer cell for glycan prediction. However, the precise prediction of minor glycans need to be further explored.     

Bile Acid–Drug Interaction via Organic Anion-Transporting Polypeptide 4C1 Is a Potential Mechanism of Altered Pharmacokinetics of Renally Excreted Drugs

Patients with liver diseases not only experience the adverse effects of liver-metabolized drugs, but also the unexpected adverse effects of renally excreted drugs. Bile acids alter the expression of renal drug transporters, however, the direct effects of bile acids on drug transport remain unknown. Renal drug transporter organic anion-transporting polypeptide 4C1 (OATP4C1) was reported to be inhibited by chenodeoxycholic acid. Therefore, we predicted that the inhibition of OATP4C1-mediated transport by bile acids might be a potential mechanism for the altered pharmacokinetics of renally excreted drugs. We screened 45 types of bile acids and calculated the IC₅₀, K_i values, and bile acid–drug interaction (BDI) indices of bile acids whose inhibitory effect on OATP4C1 was >50%. From the screening results, lithocholic acid (LCA), glycine-conjugated lithocholic acid (GLCA), and taurine-conjugated lithocholic acid (TLCA) were newly identified as inhibitors of OATP4C1. Since the BDI index of LCA was 0.278, LCA is likely to inhibit OATP4C1-mediated transport in clinical settings. Our findings suggest that dose adjustment of renally excreted drugs may be required in patients with renal failure as well as in patients with hepatic failure. We believe that our findings provide essential information for drug development and safe drug treatment in clinics.     

Fabrication of Al matrix composite reinforced with submicrometer-sized Al<Subscript>2</Subscript>O<Subscript>3</Subscript> particles formed by combustion reaction between HEMM Al and V<Subscript>2</Subscript>O<Subscript>5</Subscript> composite particles during sintering

To fabricate an Al-V matrix composite reinforced with submicron-sized Al₂O₃ and Al_xV_y (Al₃V, Al₁₀V) phases, high energy mechanical milling (HEMM) and sintering were employed. By increasing the milling time, the size of mechanically milled powder was significantly reduced. In this study, the average powder size of 59 μm for Al, and 178 μm for V₂O₅ decreased with the formation of a new product, Al-Al₂O₃-Al_xV_y, with a size range from 1.3 μm to 2.6 μm formed by the in-situ combustion reaction during sintering of HEM milled Al and V₂O₅ composite powders. The in-situ reaction between Al and V₂O₅ during the HEMM and sintering transformed the Al₂O₃ and Al_xV_y (Al₃V, Al₁₀V) phases. Most of the reduced V reacted with excess the Al to form Al_xV_y (Al₃V, Al₁₀V) with very little V dissolved into Al matrix. By increasing the milling time and weight percentage of V₂O₅, the hardness of the Al-Al₂O₃-Al_xV_y composite sintered at 1173 K increased. The composite fabricated with the HEMM Al-20wt.%V₂O₅ composite powder and sintering at 1173 K for 2 h had the highest hardness.     

Dielectric Liquid-in-Liquid Dispersion by Applying Pulsed Voltage

Liquid-in-liquid dispersion, such as organic liquid in water or water in organic liquid, has been performed using dc or ac voltage applied between nozzle and ground electrode. In the present study, pulsed high voltage was applied to produce droplets with controlled diameter in wide range. The high voltage pulse source was capacitor discharge type with 20 - 50 Hz and ranged from 0 to several kV. Water glass was atomized in alcohol solution into diameters ranging from several mum to sub-mm, depending on applied voltage. The atomized water glass droplets were solidified by removing water molecules from the water glass. Synchronized droplet formation with pulse frequency was possible by controlling pulse voltage, width and frequency, which produced uniform sized droplets successively. When the pulse voltage was raised, the droplet formation mode changed from the synchronized formation to dispersion mode through transient mode. In the dispersion mode, droplets of several mum diameter having high uniformity were produced. Utilization of high voltage and high-speed pulse to liquid-liquid dispersion could make it possible to atomize in a conductive liquid without electrolysis.     

The process dependence on positive bias temperature aginginstability of p+(B) polysilicon-gate MOS devices

During positive bias temperature (BT) aging, a large number of interface traps on p⁺(B) polysilicon MOS devices are generated in the upper half of the bandgap without an increase in the charges trapped in the gate oxide. The increase in interface traps can be reduced by processes which exclude the hydrogen included during fabrication. The increase in the interface-state density is explained as follows. The generation of the interface traps is caused by hydrogen ions reaching at the SiO₂/Si interface through the gate oxide from the polysilicon-gate electrode. The hydrogen ions combine with activated boron and are released from the boron under positive BT aging. The increase in interface traps is formulated by equations which are derived from the above model     

Dynamic bandwidth control of the virtual path in an asynchronoustransfer mode network

The virtual path concept has several valuable features to construct an economical and efficient asynchronous transfer mode (ATM) network. One of them is bandwidth control which affords transmission efficiency improvement through statistical sharing of capacity. An effective bandwidth control algorithm and its calculated performance are described. Network performance with the algorithm is evaluated, and the bandwidth control is shown to successfully improve network transmission efficiency with only a slight increase in processing load compared to the fixed bandwidth scheme. A method is also proposed to equalize call loss probability for each virtual path. The effectiveness of the method is demonstrated by analysis     

A 1.5-V full-swing BiCMOS logic circuit

A BiCMOS logic circuit applicable to sub-2-V digital circuits has been developed. A transiently saturated full-swing BiCMOS (TS-FS-BiCMOS) logic circuit operates twice as fast as CMOS at 1.5-V supply. A newly developed transient-saturation technique, with which bipolar transistors saturate only during switching periods, is the key to sub-2-V operation because a high-speed full-swing operation is achieved to remove the voltage loss due to the base-emitter turn-on voltage. Both small load dependence and small fan-in dependence of gate delay time are attained with this technique. A two-input gate fabricated with 0.3-μm BiCMOS technology verifies the performance advantage of TS-FS-BiCMOS over other BiCMOS circuits and CMOS at sub 2-V supply