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121.
Buttari D. Chini A. Meneghesso G. Zanoni E. Moran B. Heikman S. Zhang N.Q. Shen L. Coffie R. DenBaars S.P. Mishra U.K. 《Electron Device Letters, IEEE》2002,23(2):76-78
Pre-metal-deposition reactive ion etching (RIE) was performed on an Al0.3Ga0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs 相似文献
122.
Liang Y.C. Wenjiang Zeng Pick Hong Ong Zhaoxia Gao Jun Cai Balasubramanian N. 《Electron Device Letters, IEEE》2002,23(12):700-703
In this letter, a concise process technology is proposed for the first time to enable the fabrication of good quality three-dimensional (3-D) suspended radio frequency (RF) micro-inductors on bulk silicon, without utilizing the lithography process on sidewall and trench-bottom patterning. Samples were fabricated to demonstrate the applicability of the proposed process technology. 相似文献
123.
The microstructures of Cu films deposited by the self-ion assisted, partially ionized beam (PIB) deposition technique under
two different accelerating potentials, 0 KeV and 6 KeV, are compared. The 6 KeV film shows a bimodal (111) fiber and (100)
fiber texture with an abundance of twin boundaries and a relatively large average grain size with a typical lognormal distribution.
The 0 KeV film consists of small, mostly (111) oriented grains with islands of abnormally large (100) grains. The controlling
factors for the abnormal growth of the (100) grains are discussed in relation to the observed microstructures, showing that
all factors necessary for abnormal (100) growth are present in the films. 相似文献
124.
干涉条纹图估测基线的方法研究 总被引:1,自引:1,他引:0
根据SAR干涉测量原理,提出了利用干涉相干条纹估测基线的方法,并以欧洲空间局资源卫星1号和2号携带的SAR系统在中国新疆伽师试验区获取的串接式(Tan-dem)干涉测量数据为数据源,对提出的方法进行了验证,结果表明,该方法能有效地估测基线,并弥补不能有效获取卫星轨道参数时,对基线进行估测的缺陷,该方法尤其适用于差分干涉测量的研究。 相似文献
125.
Hans-Jürgen Odenthal Herbert Pfeifer Ina Lemanowicz Rainer Gorissen 《Metallurgical and Materials Transactions B》2002,33(2):163-172
The present work describes quantitative digital particle image velocimetry measurements of a full-scale water model of a thin
slab mold. Different casting speeds and two submerged entry nozzles with one and two outlet ports have been investigated.
The flow pattern of the single-port nozzle shows a counterclockwise-rotating double vortex that is nearly steady-state but
leads to high stationary surface waves. The flow jets out of the two-port nozzle oscillate and produce a transient flow pattern
with low wave amplitudes. The amplitudes for the one-port nozzle show a linear variation with the volumetric flow rate. The
experimental results lead to a good interpretation of the flow phenomena and are used to validate steady-state numerical simulations
with the commercial program, CFX, on the basis of the Reynolds equations. To describe anisotropic turbulence effects, the
Reynolds stress model (RSM) is used for the flat single-port nozzle and the standard k-ɛ model for the mold flow. The calculated mean velocities and wave amplitudes, predicted from pressure distribution at the
water surface, are generally in the consensus of the experimental data.
An erratum to this article is available at . 相似文献
126.
J. C. Williams R. G. Baggerly N. E. Paton 《Metallurgical and Materials Transactions A》2002,33(3):837-850
Single crystals of Ti-Al alloys containing 1.4, 2.9, 5, and 6.6 pct Al (by weight) were oriented for 〈a〉 slip on either basal or prism planes or loaded parallel along the c-axis to enforce a nonbasal deformation mode. Most of the tests were conducted in compression and at temperatures between
77 and 1000 K. Trace analysis of prepolished surfaces enabled identification of the twin or slip systems primarily responsible
for deformation. Increasing the deformation temperature, Al content, or both, acted to inhibit secondary twin and slip systems,
thereby increasing the tendency toward strain accommodation by a single slip system having the highest resolved stress. In
the crystals oriented for basal slip, transitions from twinning to multiple slip and, finally, to basal slip occurred with
increasing temperature in the lower-Al-content alloys, whereas for Ti-6.6 pct Al, only basal slip was observed at all temperatures
tested. A comparison of the critically resolved shear stress (CRSS) values for basal and prism slip as a function of Al content
shows that prism slip is favored at room temperature in pure Ti, but the stress to activate these two systems becomes essentially
equal in the Ti-6.6 pct Al crystals over a wide range of temperatures.
Compression tests on crystals oriented so that the load was applied parallel to the c-axis showed extensive twinning in lower Al concentrations and 〈c+a〉 slip at higher Al concentrations, with a mixture of 〈c+a〉 slip and twinning at intermediate compositions. A few tests also were conducted in tension, with the load applied parallel
to the c-axis. In these cases, twinning was observed, and the resolved shear for plastic deformation by twinning was much lower that
that for 〈c+a〉 slip observed in compression loading.
This article is based on a presentation made in the symposium entitled “Defect Properties and Mechanical Behavior of HCP Metals
and Alloys” at the TMS Annual Meeting, February 11–15, 2001, in New Orleans, Louisiana, under the auspices of the following
ASM committees: Materials Science and Critical Technology Sector, Structural Materials Division, Electronic, Magnetic & Photonic
Materials Division, Chemistry & Physics of Materials Committee, Joint Nuclear Materials Committee, and Titanium Committee. 相似文献
127.
128.
S N Maitra 《Sadhana》1985,8(4):373-385
The burn time and burnout velocity of a multistage rocket flown vertically in vacuum with constant thrust tangential to the
flight path and a prescribed initial/final thrust-to-weight ratio in an arbitrary stage have been determined.
The present paper also deals with optimal staging under given conditions of flight. 相似文献
129.
130.